公开(公告)号：AU2002368353A1

公开(公告)日：2004-06-03

申请号：AU2002368353

申请日：2002-11-07

Applicant: HONEYWELL INT INC

Inventor： THOMAS MICHAEL

IPC: B22D25/02 ,  B22D27/04 ,  C23C14/34 ,  B22D27/09 ,  B22D17/00 ,  B22D41/005 ,  C22C9/00 ,  C22C14/00 ,  C22C16/00 ,  C22C21/00

公开(公告)号：AU2003273546A1

公开(公告)日：2003-12-19

申请号：AU2003273546

申请日：2003-06-03

Applicant: HONEYWELL INT INC

Inventor： IWAMOTO NANCY ,  THOMAS MICHAEL

IPC: H01L21/316 ,  H01L21/768 ,  H01L23/532

公开(公告)号：CA2442030A1

公开(公告)日：2002-10-24

申请号：CA2442030

申请日：2002-04-16

Applicant: HONEYWELL INT INC

Inventor： LI BO ,  IWAMOTO NANCY ,  NAMAN ANANTH ,  THOMAS MICHAEL ,  DANIELS BRIAN ,  KOROLEV BORIS ,  APEN PAUL

IPC: B05D1/40 ,  B05D7/00 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H05K1/03 ,  H01L21/31 ,  B32B9/04 ,  H01L21/314

Abstract: Low dielectric constant layered materials and a methof for making said layered materials comprising the steps of: a) providing a surface ; b) spinning a dielectric material on to the surface; c) curing the dielectric material to form a dielectric layer; d) spinning a low dielectric constant material on to the dielectric layer; and e) curing the low dielectric constant material to form a low dielectric constant layer. Each layer can be spun-on to the layered component and subsequently cured before additional layers are added or all layers can be spun-on to the layered component and then the entire stack is cured at once.

公开(公告)号：CA2413592A1

公开(公告)日：2002-01-03

申请号：CA2413592

申请日：2001-06-19

Applicant: HONEYWELL INT INC

Inventor： DRAGE JAMES S ,  HACKER NIGEL P ,  THOMAS MICHAEL

IPC: B08B7/00 ,  B32B3/10 ,  G03F7/16 ,  G03F7/40 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768

Abstract: Silica dielectric films, whether nonporous foamed silica dielectrics or nonporous silica dielectrics are readily damaged by fabrication methods and reagents that reduce or remove hydrophobic properties from the dielectric surface. The invention provides for methods of imparting hydrophobic properties to such damaged silica dielectric films present on a substrate. T he invention also provides plasma-based methods for imparting hydrophobicity to both new and damaged silica dielectric films. Semiconductor devices prepared by the inventive processes are also provided.