公开(公告)号：WO2004041972A3

公开(公告)日：2004-07-15

申请号：PCT/US0334816

申请日：2003-10-31

Applicant: HONEYWELL INT INC ,  LI BO ,  ZHOU DE-LING ,  NAMAN ANANTH ,  APEN PAUL

Inventor： LI BO ,  ZHOU DE-LING ,  NAMAN ANANTH ,  APEN PAUL

IPC: C08G61/02 ,  C08L65/00 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01B3/30 ,  H01L21/47 ,  H01L21/4763

CPC classification number: H01L21/76829 ,  C08G61/02 ,  C08L65/00 ,  H01L21/312 ,  H01L21/3121 ,  H01L21/31695 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/7682 ,  H01L23/5222 ,  H01L23/5329 ,  H01L2221/1036 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01L2924/00

Abstract: The present invention provides gas layer formation material selected from the group consisting of acenaphthylene homopolymers; acenaphthylene copolymers; poly(arylene ether); polyamide; B-staged multifunctional acrylate/methacrylate; crosslinked styrene divinyl benzene polymers; and copolymers of styrene and divinyl benzene with maleimide or bis-maleimides. The formed gas layers (72) are used in microchips and multichip modules.

Abstract translation: 本发明提供选自苊烯均聚物的气层形成材料; 苊烯共聚物; 聚（亚芳基醚）; 聚酰胺; B阶多功能丙烯酸酯/甲基丙烯酸酯; 交联苯乙烯二乙烯基苯聚合物; 苯乙烯和二乙烯基苯与马来酰亚胺或双马来酰亚胺的共聚物。 形成的气体层（72）用于微芯片和多芯片模块。

公开(公告)号：EP1578839A4

公开(公告)日：2007-06-20

申请号：EP03800316

申请日：2003-12-30

Applicant: HONEYWELL INT INC

Inventor： LI BO ,  LAU KREISLER ,  APEN PAUL

IPC: C07C13/615 ,  C07C13/64 ,  C07C17/10 ,  C07C17/269 ,  C08G61/06 ,  C08G61/00 ,  C07C5/367 ,  C07C13/00 ,  C07C15/00 ,  C07C15/16 ,  C07C15/20

CPC classification number: C07C17/10 ,  C07C13/615 ,  C07C13/64 ,  C07C17/269 ,  C07C2603/74 ,  C07C2603/90 ,  C08G61/06 ,  C07C23/46 ,  C07C25/22

Abstract: Compositions and methods of forming and using those compositions are provided herein where the composition comprises at least one oligomer or polymer of Formula I wherein E is a cage compound; each Q is the same or different and selected from aryl, branched aryl, and substituted aryl wherein the substituents include hydrogen, halogen, alkyl, aryl, substituted aryl, heteroaryl, aryl ether, alkenyl, alkynyl, alkoxyl, hydroxyalkyl, hydroxyaryl, hydroxyalkenyl, hydroxyalkynyl, hydroxyl, or carboxyl; A is substituted or unsubstituted aryl with substituted or unsubstituted arylalkynyl group (substituents include hydrogen, halogen, alkyl, phenyl or substituted aryl; and aryl includes phenyl, biphenyl, naphthyl, terphenyl, anthracenyl, polyphenylene, polyphenylene ether, or substituted aryl); h is from 0 to 10; i is from 0 to 10; j is from 0 to 10; and w is 0 or 1.

公开(公告)号：EP1373358A4

公开(公告)日：2005-03-16

申请号：EP01983172

申请日：2001-10-18

Applicant: HONEYWELL INT INC

Inventor： APEN PAUL ,  LAU KREISLER ,  LIU FENG QUAN ,  KOROLEV BORIS ,  BROUK EMMA ,  ZHEREBIN RUSLAN ,  NALEWAJEK DAVID ,  LEUNG ROGER

IPC: C07C13/615 ,  C07C13/64 ,  C07C15/54 ,  C07C17/10 ,  C07C17/269 ,  C07C43/285 ,  C07F7/08 ,  C08F38/00 ,  C08G61/02 ,  C08G61/12 ,  C08G65/38 ,  C08L71/10

CPC classification number: C08G61/12 ,  C07C13/615 ,  C07C13/64 ,  C07C15/54 ,  C07C17/10 ,  C07C17/269 ,  C07C2603/74 ,  C07C2603/90 ,  C07F7/0809 ,  C08F238/00 ,  C08G61/02 ,  H01L2924/0002 ,  C07C23/46 ,  C07C25/22 ,  H01L2924/00

Abstract: The present invention is directed to low dielectric polymers and to methods of producing these low dielectric constant polymers, dielectric materials and layers, and electronic components. In one aspect of the present invention, an isomeric mixture of thermosetting monomers, wherein the monomers have a core structure and a plurality of arms, is provided, and the isomeric mixture of thermosetting monomers is polymerized, wherein polymerization comprises a reaction of an ethynyl group that is located in at least one arm of a monomer. In yet another aspect of the inventive subject matter, spin-on low dielectric constant materials are formed having a first backbone with an aromatic moiety and a first reactive group, and a second backbone with an aromatic moiety and a second reactive group, wherein the first and second backbone are crosslinked via the first and second reactive groups in a crosslinking reaction preferably without an additional crosslinker, and wherein a cage structure having at least eight (8) atoms is covalently bound to at least one of the first and second backbone.

公开(公告)号：AU2003295370A1

公开(公告)日：2004-06-07

申请号：AU2003295370

申请日：2003-10-31

Applicant: HONEYWELL INT INC

Inventor： LI BO ,  ZHOU DE-LING ,  NAMAN ANANTH ,  APEN PAUL

IPC: C08G61/02 ,  C08L65/00 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: The present invention provides gas layer formation material selected from the group consisting of acenaphthylene homopolymers; acenaphthylene copolymers; poly(arylene ether); polyamide; B-staged multifunctional acrylate/methacrylate; crosslinked styrene divinyl benzene polymers; and copolymers of styrene and divinyl benzene with maleimide or bis-maleimides. The formed gas layers are used in microchips and multichip modules.

公开(公告)号：AU2003295370A8

公开(公告)日：2004-06-07

申请号：AU2003295370

申请日：2003-10-31

Applicant: HONEYWELL INT INC

Inventor： ZHOU DE-LING ,  NAMAN ANANTH ,  APEN PAUL ,  LI BO

IPC: C08G61/02 ,  C08L65/00 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01B3/30 ,  H01L21/47 ,  H01L21/4763

Abstract: The present invention provides gas layer formation material selected from the group consisting of acenaphthylene homopolymers; acenaphthylene copolymers; poly(arylene ether); polyamide; B-staged multifunctional acrylate/methacrylate; crosslinked styrene divinyl benzene polymers; and copolymers of styrene and divinyl benzene with maleimide or bis-maleimides. The formed gas layers are used in microchips and multichip modules.

公开(公告)号：CA2442030A1

公开(公告)日：2002-10-24

申请号：CA2442030

申请日：2002-04-16

Applicant: HONEYWELL INT INC

Inventor： LI BO ,  IWAMOTO NANCY ,  NAMAN ANANTH ,  THOMAS MICHAEL ,  DANIELS BRIAN ,  KOROLEV BORIS ,  APEN PAUL

IPC: B05D1/40 ,  B05D7/00 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H05K1/03 ,  H01L21/31 ,  B32B9/04 ,  H01L21/314

Abstract: Low dielectric constant layered materials and a methof for making said layered materials comprising the steps of: a) providing a surface ; b) spinning a dielectric material on to the surface; c) curing the dielectric material to form a dielectric layer; d) spinning a low dielectric constant material on to the dielectric layer; and e) curing the low dielectric constant material to form a low dielectric constant layer. Each layer can be spun-on to the layered component and subsequently cured before additional layers are added or all layers can be spun-on to the layered component and then the entire stack is cured at once.

公开(公告)号：AU2003300056A1

公开(公告)日：2005-02-14

申请号：AU2003300056

申请日：2003-12-30

Applicant: HONEYWELL INT INC

Inventor： LAU KREISLER ,  APEN PAUL ,  LI BO

IPC: C07C13/615 ,  C07C13/64 ,  C07C17/10 ,  C07C17/269 ,  C08G61/06 ,  C08G61/00 ,  C07C15/20 ,  C07C13/00 ,  C07C15/00 ,  C07C15/16 ,  C07C5/367

Abstract: Compositions and methods of forming and using those compositions are provided herein where the composition comprises at least one oligomer or polymer of Formula I wherein E is a cage compound; each Q is the same or different and selected from aryl, branched aryl, and substituted aryl wherein the substituents include hydrogen, halogen, alkyl, aryl, substituted aryl, heteroaryl, aryl ether, alkenyl, alkynyl, alkoxyl, hydroxyalkyl, hydroxyaryl, hydroxyalkenyl, hydroxyalkynyl, hydroxyl, or carboxyl; A is substituted or unsubstituted aryl with substituted or unsubstituted arylalkynyl group (substituents include hydrogen, halogen, alkyl, phenyl or substituted aryl; and aryl includes phenyl, biphenyl, naphthyl, terphenyl, anthracenyl, polyphenylene, polyphenylene ether, or substituted aryl); h is from 0 to 10; i is from 0 to 10; j is from 0 to 10; and w is 0 or 1.

公开(公告)号：CA2441901A1

公开(公告)日：2002-10-17

申请号：CA2441901

申请日：2001-10-18

Applicant: HONEYWELL INT INC

Inventor： LEUNG ROGER ,  NALEWAJEK DAVID ,  APEN PAUL ,  ZHEREBIN RUSLAN ,  KOROLEV BORIS ,  BROUK EMMA ,  LAU KREISLER ,  LIU FENG QUAN

IPC: C07C13/615 ,  C07C13/64 ,  C07C15/54 ,  C07C17/10 ,  C07C17/269 ,  C07C43/285 ,  C07F7/08 ,  C08F38/00 ,  C08G61/02 ,  C08G61/12 ,  C08G65/38 ,  C08L71/10 ,  C08G63/78 ,  C08F8/00

Abstract: The present invention is directed to low dielectric polymers and to methods of producing these low dielectric constant polymers, dielectric materials and layers, and electronic components. In one aspect of the present invention, a n isomeric mixture of thermosetting monomers, wherein the monomers have a core structure and a plurality of arms, is provided, and the isomeric mixture of thermosetting monomers is polymerized, wherein polymerization comprises a reaction of an ethynyl group that is located in at least one arm of a monome r. In yet another aspect of the inventive subject matter, spin-on low dielectri c constant materials are formed having a first backbone with an aromatic moiet y and a first reactive group, and a second backbone with an aromatic moiety an d a second reactive group, wherein the first and second backbone are crosslink ed via the first and second reactive groups in a crosslinking reaction preferab ly without an additional crosslinker, and wherein a cage structure having at least eight (8) atoms is covalently bound to at least one of the first and second backbone.