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    SENSOR SYSTEM AND METHODS USED TO DETECT MATERIAL WEAR AND SURFACE DETERIORATION
    1.
    发明申请
    SENSOR SYSTEM AND METHODS USED TO DETECT MATERIAL WEAR AND SURFACE DETERIORATION 审中-公开
    传感器系统和方法用于检测材料磨损和表面缺陷

    公开(公告)号：WO2004024979B1

    公开(公告)日：2004-05-27

    申请号：PCT/US0328832

    申请日：2003-09-12

    Applicant: HONEYWELL INT INC ,  BONNE ULRICH ,  MOSHER JOHN ,  POBLANO PHILIP ,  GRABMEIER SUSANNE ,  THOMAS MICHAEL ,  STROTHERS SUSAN

    Inventor： BONNE ULRICH ,  MOSHER JOHN ,  POBLANO PHILIP ,  GRABMEIER SUSANNE ,  THOMAS MICHAEL ,  STROTHERS SUSAN

    IPC: C23C14/34

    CPC classification number: H01J37/3479 ,  C23C14/3407

    Abstract: A sensor system has been developed for measuring erosion of a sputtering target (510) in a vacuum chamber that includes: a) a sputtering target, b) a wafer, c) a vacuum atmosphere located between the sputtering target and the wafer, and d) a sensor device (525) directly coupled to the sputtering target (510), wherein the sensor device (525) is exposed to the vacuum atmosphere and comprises a data collection apparatus that is exposed to atmospheric pressure. A method of detecting erosion in a sputtering target (510) has also been developed that includes: a) providing a sputtering target (510), b) providing a wafer (550), c) initiating a vacuum atmosphere and a plasma that are located between the sputtering target (510) and the wafer (550), d) providing a sensor device (525) directly coupled to the sputtering target (510), wherein the sensor device (525) is partly exposed to the vacuum atmosphere and comprises a data collection apparatus that is exposed to atmospheric pressure, e) collecting data from the data collection apparatus; and f) automatically terminating the operation of the plasma once the data collection apparatus determines that the sputtering target (510) has sufficiently eroded.

    Abstract translation: 已经开发了用于测量真空室中的溅射靶（510）的侵蚀的传感器系统，所述真空室包括：a）溅射靶，b）晶片，c）位于溅射靶和晶片之间的真空气氛，以及d ）直接耦合到溅射靶（510）的传感器装置（525），其中传感器装置（525）暴露于真空气氛并且包括暴露于大气压的数据收集装置。 还已经开发了检测溅射靶（510）中的侵蚀的方法，该方法包括：a）提供溅射靶（510），b）提供晶片（550），c）引发位于其中的真空气氛和等离子体 在所述溅射靶（510）和所述晶片（550）之间，d）提供直接耦合到所述溅射靶（510）的传感器装置（525），其中所述传感器装置（525）部分地暴露于所述真空气氛并且包括 数据收集装置，其暴露于大气压力，e）从数据收集装置收集数据; 以及f）一旦数据采集装置确定溅射靶（510）已经充分侵蚀，则自动终止等离子体的操作。

    SENSOR SYSTEM AND METHODS USED TO DETECT MATERIAL WEAR AND SURFACE DETERIORATION
    2.
    发明申请
    SENSOR SYSTEM AND METHODS USED TO DETECT MATERIAL WEAR AND SURFACE DETERIORATION 审中-公开
    传感器系统和用于检测材料磨损和表面检测的方法

    公开(公告)号：WO2004024979A9

    公开(公告)日：2004-07-15

    申请号：PCT/US0328832

    申请日：2003-09-12

    Applicant: HONEYWELL INT INC ,  BONNE ULRICH ,  MOSHER JOHN ,  POBLANO PHILIP ,  GRABMEIER SUSANNE ,  THOMAS MICHAEL ,  STROTHERS SUSAN

    Inventor： BONNE ULRICH ,  MOSHER JOHN ,  POBLANO PHILIP ,  GRABMEIER SUSANNE ,  THOMAS MICHAEL ,  STROTHERS SUSAN

    IPC: C23C14/34

    CPC classification number: H01J37/3479 ,  C23C14/3407

    Abstract: A sensor system has been developed for measuring erosion of a sputtering target (510) in a vacuum chamber that includes: a) a sputtering target, b) a wafer, c) a vacuum atmosphere located between the sputtering target and the wafer, and d) a sensor device (525) directly coupled to the sputtering target (510), wherein the sensor device (525) is exposed to the vacuum atmosphere and comprises a data collection apparatus that is exposed to atmospheric pressure. A method of detecting erosion in a sputtering target (510) has also been developed that includes: a) providing a sputtering target (510), b) providing a wafer (550), c) initiating a vacuum atmosphere and a plasma that are located between the sputtering target (510) and the wafer (550), d) providing a sensor device (525) directly coupled to the sputtering target (510), wherein the sensor device (525) is partly exposed to the vacuum atmosphere and comprises a data collection apparatus that is exposed to atmospheric pressure, e) collecting data from the data collection apparatus; and f) automatically terminating the operation of the plasma once the data collection apparatus determines that the sputtering target (510) has sufficiently eroded.

    Abstract translation: 已经开发了用于测量真空室中的溅射靶（510）的侵蚀的传感器系统，其包括：a）溅射靶，b）晶片，c）位于溅射靶和晶片之间的真空气氛，d ）直接耦合到所述溅射靶（510）的传感器装置（525），其中所述传感器装置（525）暴露于所述真空气氛，并且包括暴露于大气压的数据采集装置。 还开发了一种检测溅射靶（510）中的侵蚀的方法，包括：a）提供溅射靶（510），b）提供晶片（550），c）启动位于 在所述溅射靶（510）和所述晶片（550）之间，d）提供直接耦合到所述溅射靶（510）的传感器装置（525），其中所述传感器装置（525）部分地暴露于所述真空气氛并且包括 暴露于大气压的数据收集装置，e）从数据收集装置收集数据; 以及f）一旦数据收集装置确定溅射靶（510）已被充分侵蚀，则自动终止等离子体的操作。

    SPUTTERING TARGET
    3.
    发明申请
    SPUTTERING TARGET 审中-公开
    飞溅目标

    公开(公告)号：WO0194660A3

    公开(公告)日：2002-05-30

    申请号：PCT/US0117798

    申请日：2001-05-31

    Applicant: HONEYWELL INT INC ,  SEGAL VLADIMIR ,  THOMAS MICHAEL ,  LI JIANXING ,  FERRASSE STEPHANE ,  ALFORD FRANK ,  SCOTT TIM ,  TURNER STEPHEN

    Inventor： SEGAL VLADIMIR ,  THOMAS MICHAEL ,  LI JIANXING ,  FERRASSE STEPHANE ,  ALFORD FRANK ,  SCOTT TIM ,  TURNER STEPHEN

    IPC: C23C14/34 ,  B22F1/00

    CPC classification number: C23C14/3414 ,  B21C23/001

    Abstract: A material may include grains of sizes such that at least 99 % of a measured area contains grains that exhibit grain areas less than 10 times an area of a mean grain size of the measured area. As examples, at least 99 % of the measured area may contain grains with grain areas less than 8, 6, or 3 times the area of the mean grain size. The grains may also have a mean grain size of less than 3 times a minimum statically recrystallized grain size, for example, a mean grain size less than about 50 microns, 10 microns, or 1 micron. The material may be comprised by a sputtering target and a thin film may be deposited on a substrate from such a sputtering target. A micro-are reduction method may include sputtering a film from a sputtering target comprising grains of sizes as described. A sputtering target forming method may include deforming a sputtering material. After the deforming, the sputtering material may be shaped into at least a portion of a sputtering target. The sputtering target may include grains of sizes as described. Also, the deforming may induce a strain level corresponding to epsilon of at least about 4. Further, the deforming may include equal channel angular extrusion.

    Abstract translation: 材料可以包括尺寸使得测量面积的至少99％含有表现出小于测量区域的平均粒度的面积的10倍的颗粒的颗粒。 作为实例，测量面积的至少99％可以含有晶粒面积小于平均晶粒尺寸面积的8,6或3倍的晶粒。 颗粒的平均粒度也可以小于最小静态再结晶晶粒尺寸的3倍，例如，平均粒度小于约50微米，10微米或1微米。 该材料可以由溅射靶材组成，并且薄膜可以从这样的溅射靶材沉积在衬底上。 微观还原方法可以包括从包括如上所述尺寸的晶粒的溅射靶溅射膜。 溅射靶的形成方法可以包括使溅射材料变形。 在变形之后，溅射材料可以被成形为溅射靶的至少一部分。 溅射靶可以包括如上所述的尺寸的晶粒。 此外，变形可以引起对应于至少约4的ε的应变水平。此外，变形可以包括相等的通道角挤压。

    REPAIR AND RESTORATION OF DAMAGED DIELECTRIC MATERIALS AND FILMS
    4.
    发明申请
    REPAIR AND RESTORATION OF DAMAGED DIELECTRIC MATERIALS AND FILMS 审中-公开
    损坏的电介质材料和膜的修复和恢复

    公开(公告)号：WO2004068555A3

    公开(公告)日：2005-02-03

    申请号：PCT/US2004002252

    申请日：2004-01-26

    Applicant: HONEYWELL INT INC ,  FAN WENYA ,  LU VICTOR ,  THOMAS MICHAEL ,  DANIELS BRIAN ,  NGUYEN TIFFANY ,  ZHOU DE-LING ,  NAMAN ANANTH ,  JIN LEI ,  BHANAP ANIL

    Inventor： FAN WENYA ,  LU VICTOR ,  THOMAS MICHAEL ,  DANIELS BRIAN ,  NGUYEN TIFFANY ,  ZHOU DE-LING ,  NAMAN ANANTH ,  JIN LEI ,  BHANAP ANIL

    IPC: H01L21/312 ,  H01L21/47 ,  H01L21/76

    CPC classification number: H01L21/31058 ,  H01L21/3105 ,  H01L21/76801 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Methods of repairing voids in a material are described herein that include: a) providing a material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c) chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. Methods of carbon restoration in a material are also described that include: a) providing a carbon-deficient material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c)chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. In addition, methods are described herein for reducing the condensation of a film and/or a carbon-deficient film that include: a) providing a film having a plurality of reactive silanol groups; b) placing the film into a plasma chamber; c) introducing a plurality of reactive organic moieties-containing silanes into the chamber; and d) allowing the silanes to react with at least some of the reactive silanol groups. Dielectric materials and low-k dielectric materials are described herein that comprise: a) an inorganic material having a plurality of silicon atoms; and b) a plurality of organic moiety-containing silane compounds, wherein the silane compounds are coupled to the inorganic material through at least some of the silicon atoms.

    Abstract translation: 本文描述了修复材料中空隙的方法，其包括：a）提供具有多个反应性硅烷醇基团的材料; b）提供至少一种反应性表面改性剂; 和c）使所述多个反应性硅烷醇基团中的至少一些与至少一种反应性表面改性剂化学封端。 还描述了材料中碳修复的方法，其包括：a）提供具有多个反应性硅烷醇基团的缺碳材料; b）提供至少一种反应性表面改性剂; 和c）使所述多个反应性硅烷醇基团中的至少一些与至少一种反应性表面改性剂化学封端。 此外，本文描述了用于减少膜和/或缺碳膜的冷凝的方法，其包括：a）提供具有多个反应性硅烷醇基团的膜; b）将膜放入等离子体室中; c）将多个含反应性有机部分的硅烷引入所述室中; 和d）允许硅烷与至少一些反应性硅烷醇基团反应。 介质材料和低k介电材料在本文中描述，其包括：a）具有多个硅原子的无机材料; 和b）多个含有机部分的硅烷化合物，其中硅烷化合物通过至少一些硅原子与无机材料偶联。

    REPAIR AND RESTORATION OF DAMAGED DIELECTRIC MATERIALS AND FILMS
    6.
    发明公开
    REPAIR AND RESTORATION OF DAMAGED DIELECTRIC MATERIALS AND FILMS 审中-公开
    修复和受损DIELEKTRISCHERMATERIALIEN和电影恢复

    公开(公告)号：EP1588411A4

    公开(公告)日：2008-10-01

    申请号：EP04705341

    申请日：2004-01-26

    Applicant: HONEYWELL INT INC

    Inventor： FAN WENYA ,  LU VICTOR ,  THOMAS MICHAEL ,  DANIELS BRIAN ,  NGUYEN TIFFANY ,  ZHOU DE-LING ,  NAMAN ANANTH ,  JIN LEI ,  BHANAP ANIL

    IPC: H01L21/312 ,  H01L21/3105 ,  H01L21/768

    CPC classification number: H01L21/31058 ,  H01L21/3105 ,  H01L21/76801 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Methods of repairing voids in a material are described herein that include: a) providing a material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c) chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. Methods of carbon restoration in a material are also described that include: a) providing a carbon-deficient material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c)chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. In addition, methods are described herein for reducing the condensation of a film and/or a carbon-deficient film that include: a) providing a film having a plurality of reactive silanol groups; b) placing the film into a plasma chamber; c) introducing a plurality of reactive organic moieties-containing silanes into the chamber; and d) allowing the silanes to react with at least some of the reactive silanol groups. Dielectric materials and low-k dielectric materials are described herein that comprise: a) an inorganic material having a plurality of silicon atoms; and b) a plurality of organic moiety-containing silane compounds, wherein the silane compounds are coupled to the inorganic material through at least some of the silicon atoms.

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