公开(公告)号：WO2004041972A3

公开(公告)日：2004-07-15

申请号：PCT/US0334816

申请日：2003-10-31

Applicant: HONEYWELL INT INC ,  LI BO ,  ZHOU DE-LING ,  NAMAN ANANTH ,  APEN PAUL

Inventor： LI BO ,  ZHOU DE-LING ,  NAMAN ANANTH ,  APEN PAUL

IPC: C08G61/02 ,  C08L65/00 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01B3/30 ,  H01L21/47 ,  H01L21/4763

CPC classification number: H01L21/76829 ,  C08G61/02 ,  C08L65/00 ,  H01L21/312 ,  H01L21/3121 ,  H01L21/31695 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/7682 ,  H01L23/5222 ,  H01L23/5329 ,  H01L2221/1036 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01L2924/00

Abstract: The present invention provides gas layer formation material selected from the group consisting of acenaphthylene homopolymers; acenaphthylene copolymers; poly(arylene ether); polyamide; B-staged multifunctional acrylate/methacrylate; crosslinked styrene divinyl benzene polymers; and copolymers of styrene and divinyl benzene with maleimide or bis-maleimides. The formed gas layers (72) are used in microchips and multichip modules.

Abstract translation: 本发明提供选自苊烯均聚物的气层形成材料; 苊烯共聚物; 聚（亚芳基醚）; 聚酰胺; B阶多功能丙烯酸酯/甲基丙烯酸酯; 交联苯乙烯二乙烯基苯聚合物; 苯乙烯和二乙烯基苯与马来酰亚胺或双马来酰亚胺的共聚物。 形成的气体层（72）用于微芯片和多芯片模块。

公开(公告)号：WO2005049681A3

公开(公告)日：2006-04-20

申请号：PCT/US2004038517

申请日：2004-11-17

Applicant: HONEYWELL INT INC ,  LI BO ,  KENNEDY JOSEPH ,  IWAMOTO NANCY ,  LU VICTOR ,  LEUNG ROGER ,  FRADKIN MARK A ,  HUSSEIN MAKAREM A ,  GOODNER MICHAEL D

Inventor： LI BO ,  KENNEDY JOSEPH ,  IWAMOTO NANCY ,  LU VICTOR ,  LEUNG ROGER ,  FRADKIN MARK A ,  HUSSEIN MAKAREM A ,  GOODNER MICHAEL D

IPC: G03C1/825 ,  C08G20060101 ,  C08L83/04 ,  C09D183/04 ,  C09D183/08 ,  G03C1/83 ,  G03F7/09

CPC classification number: C09D183/04 ,  C09D183/08 ,  G03F7/0751 ,  G03F7/0752 ,  G03F7/091

Abstract: An absorbing composition is described herein that includes at least one inorganic­based compound, at least one absorbing compound, and at least one material modification agent. In addition, methods of making an absorbing composition are also described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) allowing the reaction mixture to form the absorbing composition at room temperature. Another method of making an absorbing composition includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) heating the reaction mixture to form the absorbing composition. Yet another method of making an absorbing composition is described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, and one or more solvents to form a reaction mixture, wherein the at least one material modification agent comprises at least one acid and water; and b) heating the reaction mixture to form an absorbing material, a coating or a film. In other methods of making an absorbing composition described herein, those methods include: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, and one or more solvents to form a reaction mixture, wherein the at least one material modification agent comprises at least one acid and water; and b) allowing the reaction mixture to form an absorbing material, a coating or a film.

Abstract translation: 本文描述的吸收组合物包括至少一种无机基化合物，至少一种吸收化合物和至少一种材料改性剂。 此外，还描述了制备吸收组合物的方法，其包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂，酸/水混合物和一种或多种溶剂 形成反应混合物; 和b）使反应混合物在室温下形成吸收组合物。 制备吸收组合物的另一种方法包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂，酸/水混合物和一种或多种溶剂组合以形成反应混合物; 和b）加热反应混合物以形成吸收组合物。 描述了制备吸收组合物的另一种方法，其包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂和一种或多种溶剂组合以形成反应混合物，其中 至少一种材料改性剂包含至少一种酸和水; 和b）加热反应混合物以形成吸收材料，涂层或膜。 在制备本文所述的吸收组合物的其它方法中，这些方法包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂和一种或多种溶剂组合以形成反应混合物， 其中所述至少一种材料改性剂包含至少一种酸和水; 和b）使反应混合物形成吸收材料，涂层或膜。

公开(公告)号：WO2004044025A8

公开(公告)日：2004-10-07

申请号：PCT/US0336354

申请日：2003-11-12

Applicant: HONEYWELL INT INC ,  BALDWIN TERESA ,  KENNEDY JOSEPH ,  IWAMOTO NANCY ,  NAKANO TADASHI ,  BEDWELL WILLIAM ,  STUCK JASON ,  SUEDEMEYER ARLENE ,  HEBERT MELLO ,  LI BO

Inventor： BALDWIN TERESA ,  KENNEDY JOSEPH ,  IWAMOTO NANCY ,  NAKANO TADASHI ,  BEDWELL WILLIAM ,  STUCK JASON ,  SUEDEMEYER ARLENE ,  HEBERT MELLO ,  LI BO

IPC: C08G20060101 ,  C08G77/02 ,  C08G77/14 ,  C08G77/18 ,  C08G77/22 ,  C08L83/06 ,  C09D183/06 ,  C09D183/08 ,  G03F7/075 ,  G03F7/09

CPC classification number: C08G77/14 ,  C08G77/22 ,  C09D183/06 ,  C09D183/08 ,  G03F7/0757 ,  G03F7/091

Abstract: Anti-reflective coating materials for ultraviolet photolithography include at least one absorbing compound and at least one material modification agent, such as at least one porogen, at least one high-boiling solvent, at least one densifying agent, at least one capping agent, at least one leveling agent, at least one catalyst, at least one replacement solvent, at least one pH tuning agent, and/or a combination thereof that are incorporated into inorganic-based materials or inorganic compositions and/or compounds. Suitable absorbing compounds are those that absorb around wavelengths such as 365 nm, 248 nm, 193 nm and 157 nm that may be used in photolithography.

Abstract translation: 用于紫外光刻的抗反射涂层材料包括至少一种吸收化合物和至少一种材料改性剂，例如至少一种致孔剂，至少一种高沸点溶剂，至少一种致密剂，至少一种封端剂， 至少一种流平剂，至少一种催化剂，至少一种置换溶剂，至少一种pH调节剂和/或其组合，其掺入无机基材料或无机组合物和/或化合物中。 合适的吸收化合物是吸收可用于光刻的波长（例如365nm，248nm，193nm和157nm）附近的吸收化合物。

公开(公告)号：WO2004044025A3

公开(公告)日：2004-07-15

申请号：PCT/US0336354

申请日：2003-11-12

Applicant: HONEYWELL INT INC ,  BALDWIN TERESA ,  KENNEDY JOSEPH ,  IWAMOTO NANCY ,  NAKANO TADASHI ,  BEDWELL WILLIAM ,  STUCK JASON ,  SUEDEMEYER ARLENE ,  HEBERT MELLO ,  LI BO

Inventor： BALDWIN TERESA ,  KENNEDY JOSEPH ,  IWAMOTO NANCY ,  NAKANO TADASHI ,  BEDWELL WILLIAM ,  STUCK JASON ,  SUEDEMEYER ARLENE ,  HEBERT MELLO ,  LI BO

IPC: C08G20060101 ,  C08G77/02 ,  C08G77/14 ,  C08G77/18 ,  C08G77/22 ,  C08L83/06 ,  C09D183/06 ,  C09D183/08 ,  G03F7/075 ,  G03F7/09

CPC classification number: C08G77/14 ,  C08G77/22 ,  C09D183/06 ,  C09D183/08 ,  G03F7/0757 ,  G03F7/091

Abstract: Anti-reflective coating materials for ultraviolet photolithography include at least one absorbing compound and at least one material modification agent, such as at least one porogen, at least one high-boiling solvent, at least one densifying agent, at least one capping agent, at least one leveling agent, at least one catalyst, at least one replacement solvent, at least one pH tuning agent, and/or a combination thereof that are incorporated into inorganic-based materials or inorganic compositions and/or compounds. Suitable absorbing compounds are those that absorb around wavelengths such as 365 nm, 248 nm, 193 nm and 157 nm that may be used in photolithography.

Abstract translation: 用于紫外光刻的抗反射涂层材料包括至少一种吸收化合物和至少一种材料改性剂，例如至少一种致孔剂，至少一种高沸点溶剂，至少一种致密化剂，至少一种封端剂， 至少一种流平剂，至少一种催化剂，至少一种置换溶剂，至少一种pH调节剂，和/或其组合，其掺入无机基材料或无机组合物和/或化合物中。 合适的吸收化合物是可以在光刻中使用的波长如365nm，248nm，193nm和157nm的那些吸收化合物。

公开(公告)号：EP1578839A4

公开(公告)日：2007-06-20

申请号：EP03800316

申请日：2003-12-30

Applicant: HONEYWELL INT INC

Inventor： LI BO ,  LAU KREISLER ,  APEN PAUL

IPC: C07C13/615 ,  C07C13/64 ,  C07C17/10 ,  C07C17/269 ,  C08G61/06 ,  C08G61/00 ,  C07C5/367 ,  C07C13/00 ,  C07C15/00 ,  C07C15/16 ,  C07C15/20

CPC classification number: C07C17/10 ,  C07C13/615 ,  C07C13/64 ,  C07C17/269 ,  C07C2603/74 ,  C07C2603/90 ,  C08G61/06 ,  C07C23/46 ,  C07C25/22

Abstract: Compositions and methods of forming and using those compositions are provided herein where the composition comprises at least one oligomer or polymer of Formula I wherein E is a cage compound; each Q is the same or different and selected from aryl, branched aryl, and substituted aryl wherein the substituents include hydrogen, halogen, alkyl, aryl, substituted aryl, heteroaryl, aryl ether, alkenyl, alkynyl, alkoxyl, hydroxyalkyl, hydroxyaryl, hydroxyalkenyl, hydroxyalkynyl, hydroxyl, or carboxyl; A is substituted or unsubstituted aryl with substituted or unsubstituted arylalkynyl group (substituents include hydrogen, halogen, alkyl, phenyl or substituted aryl; and aryl includes phenyl, biphenyl, naphthyl, terphenyl, anthracenyl, polyphenylene, polyphenylene ether, or substituted aryl); h is from 0 to 10; i is from 0 to 10; j is from 0 to 10; and w is 0 or 1.

公开(公告)号：EP1695142A4

公开(公告)日：2007-05-30

申请号：EP04811280

申请日：2004-11-17

Applicant: HONEYWELL INT INC

Inventor： LI BO ,  KENNEDY JOSEPH ,  IWAMOTO NANCY ,  LU VICTOR ,  LEUNG ROGER ,  FRADKIN MARK A ,  HUSSEIN MAKAREM A ,  GOODNER MICHAEL D

IPC: G03C1/825 ,  C08G20060101 ,  C08L83/04 ,  C09D183/04 ,  C09D183/08 ,  G03F7/09

CPC classification number: C09D183/04 ,  C09D183/08 ,  G03F7/0751 ,  G03F7/0752 ,  G03F7/091

Abstract: An absorbing composition is described herein that includes at least one inorganic-based compound, at least one absorbing compound, and at least one material modification agent. In addition, methods of making an absorbing composition are also described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, and one or more solvents to form a reaction mixture, wherein the at least one material modification agent comprises at least one acid and water; and b) heating the reaction mixture to form an absorbing material, a coating or a film.

公开(公告)号：AU2003295517A8

公开(公告)日：2004-06-03

申请号：AU2003295517

申请日：2003-11-12

Applicant: HONEYWELL INT INC

Inventor： BALDWIN TERESA ,  STUCK JASON ,  NAKANO TADASHI ,  HEBERT MELLO ,  KENNEDY JOSEPH ,  SUEDEMEYER ARLENE ,  LI BO ,  IWAMOTO NANCY ,  BEDWELL WILLIAM

IPC: C08G20060101 ,  C08G77/02 ,  C08G77/14 ,  C08G77/18 ,  C08G77/22 ,  C08L83/06 ,  C09D183/06 ,  C09D183/08 ,  G03F7/075 ,  G03F7/09

Abstract: Anti-reflective coating materials for ultraviolet photolithography include at least one absorbing compound and at least one material modification agent, such as at least one porogen, at least one high-boiling solvent, at least one densifying agent, at least one capping agent, at least one leveling agent, at least one catalyst, at least one replacement solvent, at least one pH tuning agent, and/or a combination thereof that are incorporated into inorganic-based materials or inorganic compositions and/or compounds. Suitable absorbing compounds are those that absorb around wavelengths such as 365 nm, 248 nm, 193 nm and 157 nm that may be used in photolithography.

公开(公告)号：CA2442030A1

公开(公告)日：2002-10-24

申请号：CA2442030

申请日：2002-04-16

Applicant: HONEYWELL INT INC

Inventor： LI BO ,  IWAMOTO NANCY ,  NAMAN ANANTH ,  THOMAS MICHAEL ,  DANIELS BRIAN ,  KOROLEV BORIS ,  APEN PAUL

IPC: B05D1/40 ,  B05D7/00 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H05K1/03 ,  H01L21/31 ,  B32B9/04 ,  H01L21/314

Abstract: Low dielectric constant layered materials and a methof for making said layered materials comprising the steps of: a) providing a surface ; b) spinning a dielectric material on to the surface; c) curing the dielectric material to form a dielectric layer; d) spinning a low dielectric constant material on to the dielectric layer; and e) curing the low dielectric constant material to form a low dielectric constant layer. Each layer can be spun-on to the layered component and subsequently cured before additional layers are added or all layers can be spun-on to the layered component and then the entire stack is cured at once.

公开(公告)号：AU2003295370A1

公开(公告)日：2004-06-07

申请号：AU2003295370

申请日：2003-10-31

Applicant: HONEYWELL INT INC

Inventor： LI BO ,  ZHOU DE-LING ,  NAMAN ANANTH ,  APEN PAUL

IPC: C08G61/02 ,  C08L65/00 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: The present invention provides gas layer formation material selected from the group consisting of acenaphthylene homopolymers; acenaphthylene copolymers; poly(arylene ether); polyamide; B-staged multifunctional acrylate/methacrylate; crosslinked styrene divinyl benzene polymers; and copolymers of styrene and divinyl benzene with maleimide or bis-maleimides. The formed gas layers are used in microchips and multichip modules.

公开(公告)号：AU2003224597A1

公开(公告)日：2003-07-30

申请号：AU2003224597

申请日：2003-01-14

Applicant: HONEYWELL INT INC

Inventor： LAU KREISLER S ,  APEN PAUL G ,  LI BO ,  SULLIVAN EDWARD J

IPC: C07C17/10 ,  C07C17/266 ,  C07C25/22 ,  C07C25/24 ,  C08G61/02 ,  C08L65/00 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L23/14 ,  H01L23/532 ,  H05K1/00 ,  H05K1/02 ,  H05K1/03 ,  H01L51/30 ,  C08J9/26

Abstract: The present invention provides a composition comprising (a) thermosetting component comprising: (1) optionally monomer of Formula I as set forth below and (2) at least one oligomer or polymer of Formula II as set forth below where E, Q, G, h, I, j, and w are as set forth below and (b) porogen that bonds to thermosetting component (a). Preferably, the porogen is selected from the group consisting of unsubstituted polynorbornene, substituted polynorbornene, polycaprolactone, unsubstituted polystyrene, substituted polystyrene, polyacenaphthylene homopolymer, and polyacenaphthylene copolymer. Preferably, the present compositions may be used as dielectric substrate in microchips, multichip modules, laminated circuit boards, or printed wiring boards.