公开(公告)号：US20150373849A1

公开(公告)日：2015-12-24

申请号：US14663447

申请日：2015-03-19

Applicant: IBIS Innotech Inc.

Inventor： Chih-Kung Huang ,  Wei-Jen Lai ,  Wen-Chun Liu

IPC: H05K1/11 ,  H05K1/18 ,  H05K1/03

CPC classification number: H05K1/0373 ,  H01L21/568 ,  H01L24/13 ,  H01L24/16 ,  H01L24/19 ,  H01L24/20 ,  H01L24/48 ,  H01L25/04 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/131 ,  H01L2224/16238 ,  H01L2224/16245 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73259 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/9222 ,  H01L2224/96 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/16195 ,  H01L2924/1715 ,  H01L2924/1815 ,  H01L2924/18162 ,  H01L2924/19105 ,  H05K1/113 ,  H05K3/0014 ,  H05K3/105 ,  H05K3/188 ,  H05K3/4007 ,  H05K3/4697 ,  H05K2201/0236 ,  H05K2201/0376 ,  H05K2201/09063 ,  H05K2201/09118 ,  H05K2201/0919 ,  H05K2201/10151 ,  H05K2201/10515 ,  H05K2201/10674 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/014

Abstract: A package structure includes a selective-electroplating epoxy compound, a first patterned circuit layer, second patterned circuit layers, metal studs, contact pads and conductive vias. The selective-electroplating epoxy compound includes cavities, a first surface and a second surface. The cavities disposed on the first surface in array arrangement. The selective-electroplating epoxy compound is formed by combining non-conductive metal complex. The metal studs are disposed in the cavities respectively and protruded from the first surface. The first patterned circuit layer is directly disposed on the first surface. The selective-electroplating epoxy compound exposes a top surface of the patterned circuit layer. The top surface is lower than or coplanar with the first surface. The second patterned circuit layers are directly disposed on the second surface. The conductive vias are disposed at the selective-electroplating epoxy compound to electrically connect the second patterned circuit layers to the corresponding metal studs.

Abstract translation: 封装结构包括选择性电镀环氧化合物，第一图案化电路层，第二图案化电路层，金属柱，接触焊盘和导电通孔。 选择性电镀环氧化合物包括空腔，第一表面和第二表面。 排列在第一表面上的空腔。 选择性电镀环氧化合物通过组合非导电金属络合物形成。 金属螺柱分别设置在空腔中并从第一表面突出。 第一图案化电路层直接设置在第一表面上。 选择性电镀环氧化合物暴露图案化电路层的顶表面。 顶面低于或与第一表面共面。 第二图案化电路层直接设置在第二表面上。 导电通孔设置在选择性电镀环氧化合物处，以将第二图案化电路层电连接到相应的金属螺柱。

公开(公告)号：US10256180B2

公开(公告)日：2019-04-09

申请号：US15461499

申请日：2017-03-17

Applicant: IBIS Innotech Inc.

Inventor： Wen-Chun Liu ,  Wei-Jen Lai

IPC: H01L23/498 ,  H01L23/31 ,  H01L23/29 ,  H01L23/48 ,  H01L25/065 ,  H01L21/48 ,  H01L23/00 ,  H05K1/02 ,  H05K1/03 ,  H05K1/11 ,  H05K1/18 ,  H05K3/18 ,  H05K3/40 ,  H05K3/00 ,  H05K3/10 ,  H05K3/46

Abstract: A package structure includes a substrate, an insulator, a plurality of pads and a patterned circuit layer. The substrate includes a plurality of through holes. The insulator covers the substrate and is filled in the through hole. The conductive vias are located in the through holes and penetrate the insulator filled in the through holes. The pads are disposed on an upper surface and a lower surface of the insulator and electrically connected to the conductive vias. A bottom surface of each pad is lower than the top surface of the insulator. The patterned circuit layer is disposed on the top surface of the insulator and connected to the conductive vias and the pads. A bottom surface of the patterned circuit layer is lower than the top surface of the insulator.

公开(公告)号：US10090256B2

公开(公告)日：2018-10-02

申请号：US15364185

申请日：2016-11-29

Applicant: IBIS Innotech Inc.

Inventor： Wen-Chun Liu ,  Wei-Jen Lai

IPC: H01L23/00 ,  H01L23/498 ,  H01L25/10 ,  H05K1/03 ,  H05K3/18 ,  H05K3/40 ,  H05K1/11 ,  H05K3/00 ,  H05K3/10 ,  H05K3/46

Abstract: A semiconductor structure includes an insulating layer, a plurality of stepped conductive vias and a patterned circuit layer. The insulating layer includes a top surface and a bottom surface opposite to the top surface. The stepped conductive vias are disposed at the insulating layer to electrically connect the top surface and the bottom surface. Each of the stepped conductive vias includes a head portion and a neck portion connected to the head portion. The head portion is disposed on the top surface, and an upper surface of the head portion is coplanar with the top surface. A minimum diameter of the head portion is greater than a maximum diameter of the neck portion. The patterned circuit layer is disposed on the top surface and electrically connected to the stepped conductive vias.

公开(公告)号：US20170194241A1

公开(公告)日：2017-07-06

申请号：US15461499

申请日：2017-03-17

Applicant: IBIS Innotech Inc.

Inventor： Wen-Chun Liu ,  Wei-Jen Lai

IPC: H01L23/498 ,  H01L23/29 ,  H01L23/00 ,  H01L25/065 ,  H01L21/48 ,  H01L23/31 ,  H01L23/48

CPC classification number: H01L23/49838 ,  H01L21/4853 ,  H01L21/486 ,  H01L23/293 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/49827 ,  H01L23/49894 ,  H01L24/17 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/0657 ,  H01L2224/16113 ,  H01L2224/16227 ,  H01L2225/06548 ,  H01L2225/06586 ,  H01L2924/15311 ,  H01L2924/1579 ,  H01L2924/186 ,  H01L2924/19105 ,  H05K1/0373 ,  H05K1/113 ,  H05K3/0014 ,  H05K3/105 ,  H05K3/188 ,  H05K3/4007 ,  H05K3/4697 ,  H05K2201/0236 ,  H05K2201/0376 ,  H05K2201/09063 ,  H05K2201/09118 ,  H05K2201/0919 ,  H05K2201/10151 ,  H05K2201/10515 ,  H05K2201/10674

Abstract: A package structure includes a substrate, an insulator, a plurality of pads and a patterned circuit layer. The substrate includes a plurality of through holes. The insulator covers the substrate and is filled in the through hole. The conductive vias are located in the through holes and penetrate the insulator filled in the through holes. The pads are disposed on an upper surface and a lower surface of the insulator and electrically connected to the conductive vias. A bottom surface of each pad is lower than the top surface of the insulator. The patterned circuit layer is disposed on the top surface of the insulator and connected to the conductive vias and the pads. A bottom surface of the patterned circuit layer is lower than the top surface of the insulator.

公开(公告)号：US20170077045A1

公开(公告)日：2017-03-16

申请号：US15364185

申请日：2016-11-29

Applicant: IBIS Innotech Inc.

Inventor： Wen-Chun Liu ,  Wei-Jen Lai

IPC: H01L23/00 ,  H01L25/10 ,  H01L23/498

CPC classification number: H01L23/562 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49894 ,  H01L24/16 ,  H01L25/105 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16227 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/18162 ,  H01L2924/3511 ,  H01L2924/35121 ,  H05K1/0373 ,  H05K1/113 ,  H05K1/115 ,  H05K3/0014 ,  H05K3/105 ,  H05K3/188 ,  H05K3/4007 ,  H05K3/4697 ,  H05K2201/0236 ,  H05K2201/0376 ,  H05K2201/09063 ,  H05K2201/09118 ,  H05K2201/0919 ,  H05K2201/09845 ,  H05K2201/10151 ,  H05K2201/10515 ,  H05K2201/10674 ,  H01L2924/00014

Abstract: A semiconductor structure includes an insulating layer, a plurality of stepped conductive vias and a patterned circuit layer. The insulating layer includes a top surface and a bottom surface opposite to the top surface. The stepped conductive vias are disposed at the insulating layer to electrically connect the top surface and the bottom surface. Each of the stepped conductive vias includes a head portion and a neck portion connected to the head portion. The head portion is disposed on the top surface, and an upper surface of the head portion is coplanar with the top surface. A minimum diameter of the head portion is greater than a maximum diameter of the neck portion. The patterned circuit layer is disposed on the top surface and electrically connected to the stepped conductive vias.

Abstract translation: 半导体结构包括绝缘层，多个阶梯形导电通孔和图案化电路层。 绝缘层包括顶表面和与顶表面相对的底表面。 阶梯状导电通孔设置在绝缘层处以电连接顶表面和底表面。 每个阶梯式导电通孔包括头部和连接到头部的颈部。 头部设置在顶表面上，头部的上表面与顶表面共面。 头部的最小直径大于颈部的最大直径。 图案化电路层设置在顶表面上并电连接到阶梯式导电通孔。