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    12.
    发明专利
    未知

    公开(公告)号：FR2412912A1

    公开(公告)日：1979-07-20

    申请号：FR7833625

    申请日：1978-11-21

    Applicant: IBM

    Inventor： AHN KIE Y ,  COHEN MITCHELL S ,  POWERS V ,  TAO LUNG-JO

    IPC: G11C11/14 ,  G11C19/08 ,  H01F10/06 ,  H01F41/34

    Abstract: An improved magnetic bubble domain chip and processes for making the chip are described. The chip is comprised of a magnetic bubble domain film in which small bubble domains can be moved, and overlying layers of metallurgy. The layer of metallurgy closest to the bubble film is an electrically conductive layer having apertures (or recesses) therein. This layer is patterned to provide current carrying conductors. The next overlayer is a layer of magnetic material having in-plane magnetization which is patterned to provide the propagation elements used to move the bubble domains. In a particular embodiment, the magnetic layer is comprised of a magnetically soft material, such as permalloy. The chip is characterized by the provision of insulating pedestals located in the apertures of the conductive layer. These insulating pedestals are located in the regions of the chip used for sensing (and/or bubble generation). That is, they take the place of the thick conductive material in those areas of the chip. The sensor and bubble generators are usually portions of the in-plane magnetic layer. If the height of the insulating pedestals is the same as the height of the conductive layer, planarization is achieved and each overlayer lies in a single plane, where the planes are parallel to one another. However, the pedestal can be of any desired height. This chip is particularly advantageous for use with bubble domains having diameters of about 1 micron and less, since the pedestal magnetic chip can be provided by single level masking techniques in which only a single critical masking step is required. The insulating pedestal can be formed prior to deposition of the current carrying conductive layer, or subsequent to deposition of this layer.

    SILICON LAMINATED MEDIA FOR ARCHIVAL OPTICAL STORAGE
    15.
    发明专利
    SILICON LAMINATED MEDIA FOR ARCHIVAL OPTICAL STORAGE 未知

    公开(公告)号：CA1199404A

    公开(公告)日：1986-01-14

    申请号：CA403576

    申请日：1982-05-21

    Applicant: IBM

    Inventor： TU KING-NING ,  AHN KIE Y ,  HERD SIGRID R

    IPC: G11C17/00 ,  B41M5/26 ,  G11B7/243 ,  G11C13/04 ,  G11B7/24

    Abstract: SILICON LAMINATED MEDIA FOR ARCHIVAL OPTICAL STORAGE Laminated media for optical storage of data in binary form include bi-layer and multi-layer structures of silicon and another element preferably a transition metal. Metals more useful are included in Groups VB, VIB, VIIB, and VIII on the periodic chart plus Mg and Au. More advantageous elements within the above group include V, Nb, Ta, Cr, Mo, W, Mn, Fe, Co, Rh, Ni, Pd, Pt, and Au. The most effective elements are Pd, Pt, Cr, Ta, Rh, V, and Co. The metal can be deposited upon a silicon layer or vice versa. The latter is preferred where a recording laser beam hits the silicon layer first because the amount of energy reflected is reduced and the silicon layer on top passivates the metal layer. The materials are nontoxic. Bi-layers of rhodium and silicon have extremely long lifetimes, Pt and Si are long, Pd and Si are less long and Te alone has an extremely short lifetime comparatively.

    PEDESTAL BUBBLE DOMAIN CHIP AND PROCESSES FOR MAKING SAME
    16.
    发明专利
    PEDESTAL BUBBLE DOMAIN CHIP AND PROCESSES FOR MAKING SAME 未知

    公开(公告)号：CA1114951A

    公开(公告)日：1981-12-22

    申请号：CA309386

    申请日：1978-08-15

    Applicant: IBM

    Inventor： AHN KIE Y ,  COHEN MITCHELL S ,  POWERS JOHN V ,  TAO LUNG-JO

    IPC: G11C11/14 ,  G11C19/08 ,  H01F10/06 ,  H01F41/34

    Abstract: PEDESTAL BUBBLE DOMAIN CHIP AND PROCESSES FOR MAKING SAME An improved magnetic bubble domain chip and processes for making the chip are described. The chip is comprised of a magnetic bubble domain film in which small bubble domains can be moved, and overlying layers of metallurgy. The layer of metallurgy closest to the bubble film is an electrically conductive layer having apertures (or recesses) therein. This layer is patterned to provide current carrying conductors. The next overlayer is a layer of magnetic material having in-plane magnetization which is patterned to provide the propagation elements used to move the bubble domains. In a particular embodiment, the magnetic layer is comprised of a magnetically soft material, such as permalloy. The chip is characterized by the provision of insulating pedestals located in the apertures of the conductive layer. These insulating pedestals are located in the regions of the chip used for sensing (and/or bubble generation). That is, they take the place of the thick conductive material in those areas of the chip. The sensor and bubble generators are usually portions of the in-plane magnetic layer. If the height of the insulating pedestals is the same as the height of the conductive layer, planarization is achieved and each overlayer lies in a single plane, where the planes are parallel to one another. However, the pedestal can be of any desired height. This chip is particularly advantageous for use with bubble domains having diameters of about 1 micron and less, since the pedestal magnetic chip can be provided by single level masking techniques in which only a single critical masking step is required. The insulating pedestal can be formed prior to deposition of the current carrying conductive layer, or subsequent to deposition of this layer.

    METHOD FOR MAKING MULTILAYER DEVICES USING ONLY A SINGLE CRITICAL MASKING STEP
    17.
    发明专利
    METHOD FOR MAKING MULTILAYER DEVICES USING ONLY A SINGLE CRITICAL MASKING STEP 未知

    公开(公告)号：CA1071761A

    公开(公告)日：1980-02-12

    申请号：CA246915

    申请日：1976-03-02

    Applicant: IBM

    Inventor： AHN KIE Y ,  HATZAKIS MICHAEL ,  POWERS JOHN V

    IPC: G11C11/14 ,  H01F10/12 ,  H01F10/13 ,  H01F41/14 ,  H01F41/34 ,  H01L21/3205 ,  H05K3/10 ,  H05K3/24 ,  H05K3/38

    Abstract: A method for making multilayer devices, such as magnetic bubble domain devices, which are comprised of a plurality of layers that are deposited using only a single critical masking step. A first metallic layer is deposited on a substrate including a magnetic bubble domain film, which may or may not have a nonmagnetic material thereon. A first resist layer is then applied, selectively exposed, and developed to expose at least two areas of the first metallic film. A thicker metallic layer is then deposited in the exposed areas, or is electroplated. After this, another resist layer is applied without deforming the pattern in the first layer, selectively exposed, and developed to protect certain areas of the thick metallic layer from subsequent formation of another metallic layer. During this subsequent formation, a second metallic film is formed using the first resist layer as a mask. After this, the resists are removed and the now uncovered portions of the original thin metallic layer are etched away. In a particular embodiment, a magnetic bubble domain chip is provided in which the second resist layer is used to protect the sensor region of the chip. The second resist layer need not be critically aligned as it only functions as a protect mask. Exposure and development of the second resist layer does not adversely affect the underlying metal layers.

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