公开(公告)号：DE2653901A1

公开(公告)日：1977-06-08

申请号：DE2653901

申请日：1976-11-27

Applicant: IBM

Inventor： BASI JAGTAR SINGH

IPC: B24B37/00 ,  C09G1/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/302

Abstract: The polishing of monocrystalline silicon wafers with an aqueous composition of fine sized abrasive particles, a soluble alkali metal base such a sodium carbonate and an oxidizing agent such as sodium or potassium salt of dichloroisocyanuric acid (e.g., salts of halo-trizenetrione).

公开(公告)号：FR2284686A1

公开(公告)日：1976-04-09

申请号：FR7521481

申请日：1975-07-03

Applicant: IBM

Inventor： BASI JAGTAR SINGH

IPC: H01L21/308 ,  C23F1/46 ,  H01L21/00 ,  C23G1/14 ,  C23G1/36 ,  H01L21/306

Abstract: Copper contaminants are removed from silicon with a solution containing copper (II) complexes. The solution may be recycled after use by bubbling oxygen through it.

公开(公告)号：DE2456244A1

公开(公告)日：1975-07-10

申请号：DE2456244

申请日：1974-11-28

Applicant: IBM

Inventor： BASI JAGTAR SINGH

IPC: C23F3/00 ,  C23F3/03 ,  H01L21/304 ,  H01L21/306 ,  C09G1/02

Abstract: 1441083 Etching INTERNATIONAL BUSINESS MACHINES CORP 5 Dec 1974 [28 Dec 1973] 52612/74 Heading B6J A solution for etching silicon comprises an aqueous solution of cupric nitrate, nitric acid and ammonium nitrate, to which has been added ammonium fluoride.

公开(公告)号：DE3473846D1

公开(公告)日：1988-10-13

申请号：DE3473846

申请日：1984-02-22

Applicant: IBM

Inventor： BASI JAGTAR SINGH ,  MENDEL ERIC

IPC: C09K3/14 ,  B24B37/04 ,  C01F7/02

公开(公告)号：DE3367042D1

公开(公告)日：1986-11-20

申请号：DE3367042

申请日：1983-06-23

Applicant: IBM

Inventor： BASI JAGTAR SINGH ,  MENDEL ERIC

IPC: H01L21/304 ,  C09G1/02 ,  H01L21/306 ,  H01L21/302

公开(公告)号：DE2961004D1

公开(公告)日：1981-12-24

申请号：DE2961004

申请日：1979-07-16

Applicant: IBM

Inventor： BASI JAGTAR SINGH ,  LYONS VINCENT JAMES ,  MENDEL ERIC

IPC: B24B37/00 ,  B24D13/14 ,  B24B37/04

公开(公告)号：DE2706519A1

公开(公告)日：1977-10-06

申请号：DE2706519

申请日：1977-02-16

Applicant: IBM

Inventor： BASI JAGTAR SINGH

IPC: H01L21/308 ,  H01L21/306 ,  H01L21/30

Abstract: The invention comprehends establishing a hydrophilic surface on polished semiconductor wafers, such as silicon, after polishing (e.g. silica polishing) by oxidation and hydrolysis of the wafer surface for conditioning thereof for post-polishing cleaning.

公开(公告)号：DE2438877A1

公开(公告)日：1975-07-03

申请号：DE2438877

申请日：1974-08-13

Applicant: IBM

Inventor： BASI JAGTAR SINGH ,  MENDEL ERIC

IPC: B24B37/00 ,  C23F1/00 ,  H01L21/304 ,  H01L21/461

公开(公告)号：DE2319286A1

公开(公告)日：1973-11-22

申请号：DE2319286

申请日：1973-04-17

Applicant: IBM

Inventor： BASI JAGTAR SINGH ,  HULL EDWARD MELVIN

IPC: H01L21/308 ,  C30B29/42 ,  H01L21/316 ,  H01L23/31 ,  C23F7/02

Abstract: A process for the protecton of gallium arsenide surfaces comprises treating the surface with sodium oxychloride solution to form an interim protective film and subsequently removing the protective film utilizing sodium oxychloride and sodium carbonate prior to further processing.