公开(公告)号：DE1240826B

公开(公告)日：1967-05-24

申请号：DEJ0025051

申请日：1963-12-30

Applicant: IBM

Inventor： HULL EDWARD MELVIN ,  LYONS VINCENT JAMES

IPC: H01L21/205

Abstract: 1,002,528. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORPORATION. Dec. 2, 1963 [Dec. 31, 1962], No. 47382/63. Heading H1K. A method of producing a smooth-surfaced epitazial deposit of semi-conductive material on a substrate comprises reacting a halogen transport element with a source of both semi-conductive material and cadmium and decomposing the vapour so formed on to a heated substrate, the deposit having a cadmium concentration of the order of the limit of solubility for cadmium in the semi-conductive deposit. As shown, an N-type gallium arsenide (GaAs) wafer 6 is placed in a sealed quartz reaction tube 1 together with a source 3 of GaAs, a source 4 of iodine or other halogen, and a source 5 of cadmium. The materials of sources 3, 4 and 5 are heated by coil 2a, whilst wafer 6, which may be masked, is heated by coil 2b. The iodine reacts with the sources of GaAs and cadmium and forms a vapour 8 which decomposes on the wafer 6 to produce an epitaxial deposit 7 of P-type GaAs. A Group II element such as zinc may be included in the GaAs source 3 or the cadmium source 5 to produce greater impurity concentrations in the deposited layer. An " open tube system of vapour deposition may also be used. The substrate may also be of P-type material.

公开(公告)号：DE2319286A1

公开(公告)日：1973-11-22

申请号：DE2319286

申请日：1973-04-17

Applicant: IBM

Inventor： BASI JAGTAR SINGH ,  HULL EDWARD MELVIN

IPC: H01L21/308 ,  C30B29/42 ,  H01L21/316 ,  H01L23/31 ,  C23F7/02

Abstract: A process for the protecton of gallium arsenide surfaces comprises treating the surface with sodium oxychloride solution to form an interim protective film and subsequently removing the protective film utilizing sodium oxychloride and sodium carbonate prior to further processing.

公开(公告)号：DE2540901A1

公开(公告)日：1976-04-29

申请号：DE2540901

申请日：1975-09-13

Applicant: IBM

Inventor： ABOAF JOSEPH ADAM ,  BROADIE ROBERT WALLACE ,  HULL EDWARD MELVIN ,  POGGE HANS BERNHARD

IPC: H01L21/3063 ,  H01L21/223 ,  H01L21/306 ,  H01L21/316 ,  H01L21/331 ,  H01L29/04 ,  H01L29/08 ,  H01L29/73 ,  H01L21/22

Abstract: A high power semiconductor device is formed by providing a semiconductor substrate of N conductivity, rendering the backside of same porous as by subjecting same to anodic treatment carried out in a concentrated solution of hydrofluoric acid, converting the porous region to an N region, as by arsenic diffusion and forming an active device by conventional techniques in the top surface of the substrate. The method permits usage of high quality N substrates and at the same time eliminates the requirement of growing thick epitaxial layers.

公开(公告)号：DE2241710A1

公开(公告)日：1973-03-22

申请号：DE2241710

申请日：1972-08-24

Applicant: IBM

Inventor： BOSS DAVID WILLIAM ,  HULL EDWARD MELVIN ,  SCILLA SALVATORE JAMES

IPC: C30B11/00 ,  C30B11/06 ,  C30B11/14 ,  C30B29/40 ,  H01L21/208 ,  B01J17/20

Abstract: An apparatus useful for growing single crystal semiconductor material comprising a liquid melt section coaxially integrated with a seed cavity and having an annularly disposed integral thermal reflector means and a radiant heat dissipating member horizontally disposed and in a post linear direction from the seed cavity.