Superconducting field-effect transistors with inverted misfet structure and method for making the same

    公开(公告)号:SG46182A1

    公开(公告)日:1998-02-20

    申请号:SG1996000248

    申请日:1991-01-07

    Applicant: IBM

    Abstract: This field-effect transistor comprises a conductive substrate (2) serving as the gate electrode, an insulating barrier layer (3), and a superconducting channel layer (1) on top of the barrier layer (3). The superconductor layer (1) carries a pair of mutually spaced electrodes (4, 5) forming source and drain, respectively. The substrate is provided with an appropriate gate contact (6). The substrate (2) consists of a material belonging to the same crystallographic family as the barrier layer (3). In a preferred embodiment, the substrate (2) is niobium-doped strontium titanate, the barrier layer (3) is undoped strontium titanate, and the superconductor (1) is a thin film of a material having a lattice constant at least approximately similar to the one of the materials of the substrate (2) and barrier (3) layers. A preferred material of this type is YBa2Cu3O7- delta , where 0

    SUPERCONDUCTING FIELD-EFFECT TRANSISTORS WITH INVERTED MISFET STRUCTURE AND METHOD FOR MAKING THE SAME.

    公开(公告)号:MY109375A

    公开(公告)日:1997-01-31

    申请号:MYPI19912268

    申请日:1991-12-06

    Applicant: IBM

    Abstract: THIS FIELD-EFFECT TRANSISTOR COMPRISES A CONDUCTIVE SUBSTRATE (2) SERVING AS THE GATE ELECTRODE, AN INSULATING BARRIER LAYER (3), AND A SUPERCONDUCTING CHANNEL LAYER (1) ON TOP OF THE BARRIER LAYER (3).THE SUPERCONDUCTOR LAYER (1) CARRIES A PAIR OF MUTUALLY SPACED ELECTRODES (4, 5) FORMING SOURCE AND DRAIN, RESPECTIVELY. THE SUBSTRATE IS PROVIDED WITH AN APPROPRIATE GATE CONTACT (6).THE SUBSTRATE (2) CONSISTS OF A MATERIAL BELONGING TO THE SAME CRYSTALLOGRAPHIC FAMILY AS THE BARRIER LAYER (3). IN A PREFERRED EMBODIMENT, THE SUBSTRATE (2) IS NIOBIUM-DOPED STRONTIUM TITANATE, THE BARRIER LAYER (3) IS UNDOPED STRONTIUM TITANATE, AND THE SUPERCONDUCTOR (1) IS A THIN FILM OF A MATERIAL HAVING A LATTICE CONSTANT AT LEAST APPROXIMATELY SIMILAR TO THE ONE OF THE MATERIALS OF THE SUBSTRATE (2) AND BARRIER (3) LAYERS. A PREFERRED MATERIAL OF THIS TYPE IS YBA2CU3O7-, WHERE 0

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