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公开(公告)号：CA2081142A1
公开(公告)日：1993-07-29
申请号：CA2081142
申请日：1992-10-22
Applicant: IBM
Inventor： COURTENS ERIC , MANNHART JOCHEN
Abstract: PINNING STRUCTURES FOR SUPERCONDUCTING FILMS AND METHOD FOR MAKING SAME The pinning structure for high-Tc superconductors comprises a substrate (1), a plurality of protrusions (3) of nanometer dimension and with mutual distances in the nanometer range, deposited on the surface (2) of said substrate (1), and a superconducting film (4) deposited on said substrate (1) and embedding said protrusions (3) in a superconductor matrix. The protrusions (3) may consist of a metal, or a semiconductor, or an insulator. The manufacturing of the pinning structure starts from a substrate (1) onto which a predetermined number of protrusions (3) is deposited in predetermined locations as required by the specific application. Finally, the superconductor film (4) is deposited on top of the same substrate (1).
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公开(公告)号：SG46182A1
公开(公告)日：1998-02-20
申请号：SG1996000248
申请日：1991-01-07
Applicant: IBM
Inventor： BEDNORZ JOHANNES GEORG , MANNHART JOCHEN , MUELLER CARL ALEXANDER
Abstract: This field-effect transistor comprises a conductive substrate (2) serving as the gate electrode, an insulating barrier layer (3), and a superconducting channel layer (1) on top of the barrier layer (3). The superconductor layer (1) carries a pair of mutually spaced electrodes (4, 5) forming source and drain, respectively. The substrate is provided with an appropriate gate contact (6). The substrate (2) consists of a material belonging to the same crystallographic family as the barrier layer (3). In a preferred embodiment, the substrate (2) is niobium-doped strontium titanate, the barrier layer (3) is undoped strontium titanate, and the superconductor (1) is a thin film of a material having a lattice constant at least approximately similar to the one of the materials of the substrate (2) and barrier (3) layers. A preferred material of this type is YBa2Cu3O7- delta , where 0
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