公开(公告)号：SG34299A1

公开(公告)日：1996-12-06

申请号：SG1995001804

申请日：1995-11-10

Applicant: IBM ,  CARBORUNDUM CO

Inventor： CASEY JON A ,  CORDERO CARLA N ,  FASANO BENJAMIN V ,  GOLAND DAVID B ,  HANNON ROBERT ,  HARRIS JONATHAN H ,  HERRON LESTER W ,  JOHNSON GREGORY M ,  PATEL NIRANJAN M ,  REITTER ANDREW M ,  SHINDE SUBHASH L ,  VALLABHANENI RAO V ,  YOUNGMAN ROBERT A

IPC: B22F7/02 ,  B32B18/00 ,  C04B35/581 ,  C04B37/02 ,  C04B41/51 ,  C04B41/52 ,  C04B41/88 ,  C04B41/89 ,  C22C29/16 ,  H01L21/48 ,  H01L23/373 ,  H05K1/03 ,  H05K3/24 ,  H05K3/40 ,  H05K3/46

Abstract: Disclosed is an aluminum nitride body having graded metallurgy and a method for making such a body. The aluminum nitride body has at least one via and includes a first layer in direct contact with the aluminum nitride body and a second layer in direct contact with, and that completely encapsulates, the first layer. The first layer includes 30 to 60 volume percent aluminum nitride and 40 to 70 volume percent tungsten and/or molybdenum while the second layer includes 90 to 100 volume percent of tungsten and/or molybdenum and 0 to 10 volume percent of aluminum nitride.

公开(公告)号：CA1326789C

公开(公告)日：1994-02-08

申请号：CA534156

申请日：1987-04-08

Applicant: IBM

Inventor： ANDERSON HERBERT R JR ,  DIVAKARUNI RENUKA S ,  DYNYS JOSEPH M ,  KANDETZKE STEVEN M ,  KIRBY DANIEL P ,  MASTER RAJ N ,  CASEY JON A

IPC: H05K3/46 ,  H01L21/48 ,  H05K1/03 ,  H05K1/09 ,  H05K3/28

Abstract: METHOD OF FAKING MULTILAYERED CERAMIC STRUCTURES HAVING AN INTERNAL DISTRIBUTION OF COPPER-BASED CONDUCTORS The Present invention provides a method for producing multilayered ceramic structures having copper-based conductors therein, wherein the onset of sintering of the copper-based conductor can be adjusted to approach or match that of the ceramic portion of the structure. In addition, methods are provided whereby the polymeric binder resin used in formation of the ceramic portion of the structure can be removed or burned-off, using oxygen-containing ambients, wherein the oxygen content is greater than 200 ppm, without oxidation of the copper-based conductors therein.