公开(公告)号：WO02057075A2

公开(公告)日：2002-07-25

申请号：PCT/EP0201048

申请日：2002-01-16

Applicant: IBM ,  IBM FRANCE

Inventor： NATARAJAN GOVINDARAJAN ,  BESAMA RASCHID J ,  CASEY JON A ,  FLACK AMY C ,  PASCO ROBERT W ,  TERPENING ARNOLD W ,  WEISMAN RENEE L

IPC: B28B11/00 ,  B32B18/00 ,  H05K1/03 ,  H05K3/46

CPC classification number: B32B18/00 ,  C04B2235/6562 ,  C04B2237/068 ,  C04B2237/122 ,  C04B2237/123 ,  C04B2237/366 ,  H05K1/0306 ,  H05K3/4611 ,  H05K3/4629 ,  Y10T156/1056 ,  Y10T156/1057

Abstract: A method of processing greensheets, wherein the following steps are performed: a) providing a greensheet (1) having a width, length, thickness, a first side (5) and a second side (7); b) bonding to the first side of the greensheet at least one strip (a, b, c...), wherein the strip lies in a first plane; c) bonding to the second side of the green sheet at least one strip, wherein the strip lies in a second plane; d) processing the greensheet; and e) removing the strips from the processed greensheet.

Abstract translation: 一种处理毛坯的方法，其中执行以下步骤：a）提供具有宽度，长度，厚度，第一侧（5）和第二侧（7）的毛坯（1）; b）将至少一个条带（a，b，c ...）粘结到毛坯的第一侧，其中条带位于第一平面中; c）将至少一个条带连接到生片的第二侧，其中条位于第二平面中; d）加工毛坯; 以及e）从加工的毛坯上去除条带。

公开(公告)号：EP1883961A4

公开(公告)日：2012-12-05

申请号：EP06759690

申请日：2006-05-12

Applicant: IBM

Inventor： CASEY JON A ,  BERGER MICHAEL ,  BUCHWALTER LEENA P ,  CANAPERI DONALD F ,  HORTON RAYMOND R ,  JAIN ANURAG ,  PERFECTO ERIC D ,  TORNELLO JAMES A

IPC: H01L23/14 ,  H01L21/48 ,  H01L21/768 ,  H01L23/48 ,  H01L23/498

CPC classification number: H01L23/147 ,  H01L21/486 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/49827 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：JP2005197733A

公开(公告)日：2005-07-21

申请号：JP2005000204

申请日：2005-01-04

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： CASEY JON A ,  SUNDLOF BRIAN R

IPC: H01L23/12 ,  H01B1/16 ,  H01L21/00 ,  H01L21/02 ,  H01L21/44 ,  H01L21/48 ,  H01L21/768 ,  H01L23/48 ,  H05K1/09 ,  H05K3/40 ,  H05K3/46

CPC classification number: H05K3/4061 ,  H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/09701 ,  H05K1/092 ,  H05K2201/068 ,  H01L2924/00012 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a metallization process for metallizing a blind via or a through via formed in a silicon, and provide a material system. SOLUTION: The process comprises a step of forming a composition, namely, a suspension with a small thermal expansion coefficient compared to pure metal (such as copper, silver, and gold); and a step of filling a via hole formed in the silicon 3 by using the suspension, namely, a paste, then sintering the suspension. As a result of the sintering, a highly conductive structure is formed, with the shrink of a capacity retained at a minimum, without forming any macroscopic void. The suspension is so selected that the thermal expansion coefficient of the suspension maintains a value close to the thermal expansion coefficient of the silicon 3. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供用于金属化形成在硅中的盲孔或通孔的金属化工艺，并提供材料体系。 解决方案：该方法包括与纯金属（例如铜，银和金）相比形成组合物，即具有小的热膨胀系数的悬浮液的步骤; 以及通过使用悬浮液即糊料填充形成在硅3中的通孔的步骤，然后烧结该悬浮液。 作为烧结的结果，形成高度导电的结构，其中容量的收缩保持在最小，而不形成任何宏观空隙。 悬浮液的选择使得悬浮液的热膨胀系数保持接近硅3的热膨胀系数的值。（C）2005，JPO＆NCIPI

公开(公告)号：WO2006124607A3

公开(公告)日：2007-04-12

申请号：PCT/US2006018458

申请日：2006-05-12

Applicant: IBM ,  CASEY JON A ,  BERGER MICHAEL ,  BUCHWALTER LEENA P ,  CANAPERI DONALD F ,  HORTON RAYMOND R ,  JAIN ANURAG ,  PERFECTO ERIC D ,  TORNELLO JAMES A

Inventor： CASEY JON A ,  BERGER MICHAEL ,  BUCHWALTER LEENA P ,  CANAPERI DONALD F ,  HORTON RAYMOND R ,  JAIN ANURAG ,  PERFECTO ERIC D ,  TORNELLO JAMES A

IPC: H01L23/22 ,  H01L23/04 ,  H01L23/14 ,  H01L23/24

CPC classification number: H01L23/147 ,  H01L21/486 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/49827 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Sealing a via using a soventless, low viscosity, high temperature stable polymer or a high solids content polymer solution of low viscosity, where the polymeric material is impregnated within the via (100) at an elevated temperature, A supply chamber (630) is introduced to administer the polymeric material at an elevated temperature, typically at a temperature high enough to liquefy the polymeric material. The polymeric material is introduced through heated supply lines under force from a pump, piston, or a vacuum held within said supply chamber.

Abstract translation: 使用无粘性，低粘度，高温稳定的聚合物或低粘度的高固含量聚合物溶液密封通孔，其中聚合物材料在高温下浸渍在通孔（100）内，引入供应室（630） 以在升高的温度下施用聚合物材料，通常在高至足以液化聚合物材料的温度下。 聚合物材料通过来自泵，活塞或保持在所述供应室内的真空的力的加热供应管线引入。

公开(公告)号：JP2005197743A

公开(公告)日：2005-07-21

申请号：JP2005000921

申请日：2005-01-05

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： CASEY JON A ,  FERRANTE WILLIAM J ,  KIEWRA EDWARD W ,  RADENS CARL J ,  TONTI WILLIAM R

IPC: H01L21/28 ,  G01K7/22 ,  H01C7/00 ,  H01L21/3205 ,  H01L21/762 ,  H01L21/768 ,  H01L21/822 ,  H01L23/52 ,  H01L27/04

CPC classification number: H01L21/76895 ,  G01K7/226 ,  H01C7/006 ,  H01L21/76224 ,  H01L21/76838

Abstract: PROBLEM TO BE SOLVED: To provide a structure and a method for forming a thermistor.
SOLUTION: An isolation region is formed in a substrate including at least an upper side layer of a single crystal semiconductor. A salicide precursor layer is formed on the isolation region and the upper side layer. Then, reaction of the salicide precursor and the upper side layer is performed and a salicide which is self-aligned to the upper side layer is formed. Finally, no reaction portion of the salicide precursor is removed, while preserving the portion of the salicide precursor on the isolation region as the main body of the thermistor. In alternative method, an integrated circuit thermistor is formed from a thermistor material region in an embossed region of interlayer dielectric (ILD).
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种用于形成热敏电阻的结构和方法。 解决方案：在至少包含单晶半导体的上侧层的衬底中形成隔离区。 在隔离区域和上侧层上形成自对准硅化物前体层。 然后，进行自对准硅化物前体与上侧层的反应，形成与上侧层自对准的自对准硅化物。 最后，除去自杀化合物前体的反应部分，同时保留作为热敏电阻的主体的隔离区上的部分自杀化合物前体。 在替代方法中，集成电路热敏电阻由层间电介质（ILD）的压花区域中的热敏电阻材料区域形成。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2005142562A

公开(公告)日：2005-06-02

申请号：JP2004319023

申请日：2004-11-02

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： PAUL S ANDREE ,  CASEY JON A ,  HORTON RAYMOND R ,  PATEL CHIRAQ S ,  SPROGIS EDMUND J ,  SUNDLOF BRIAN R

IPC: H01L23/12 ,  H01L21/48 ,  H01L21/60 ,  H01L21/76 ,  H01L23/14 ,  H01L25/04 ,  H01L25/18 ,  H05K3/34

CPC classification number: H01L21/486 ,  H01L23/147 ,  H01L2224/16225 ,  H01L2924/10253 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a method for filling a via within a wafer, particularly, for filling a blind via first, and various devices for carrying out the method. SOLUTION: The method includes a step for evacuating the via of air, a step for trapping at least a portion of a wafer and a paste with which to fill the via between two surfaces, and a step for filling the via by applying pressure to the paste. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种用于在晶片内填充通孔的方法，特别是用于首先填充盲孔，以及用于执行该方法的各种装置。 解决方案：该方法包括用于抽空空气通道的步骤，用于捕获至少一部分晶片和用于填充两个表面之间的通孔的浆料的步骤，以及通过施加填充通孔的步骤 对浆糊的压力。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2004241771A

公开(公告)日：2004-08-26

申请号：JP2004020523

申请日：2004-01-28

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： CASEY JON A ,  BALZ JAMES G ,  BERGER MICHAEL ,  COHEN JEROME ,  HENDRICKS CHARLES ,  INDYK RICHARD ,  LAPLANTE MARK ,  LONG DAVID C ,  MAIORINO LORI A ,  MERRYMAN ARTHUR G ,  POMERANTZ GLENN A ,  RITA ROBERT A ,  SEMKOW KRYSTYNA W ,  SPENCER PATRICK E ,  SUNDLOF BRIAN R ,  SURPRENANT RICHARD P ,  WALL DONALD R ,  WASSICK THOMAS A ,  WILEY KATHLEEN M

IPC: H05K3/46 ,  H01L21/48 ,  H01L23/12 ,  H01L23/498 ,  H05K1/03 ,  H05K3/00 ,  H05K3/22

CPC classification number: H05K3/225 ,  H01L21/4846 ,  H01L23/49811 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/3011 ,  H05K1/0306 ,  H05K3/0029 ,  H05K3/4629 ,  H05K2203/173 ,  Y10T29/49124 ,  Y10T29/49135 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a multilayer ceramic correction process which forms a new electric correction path for connecting top vias. SOLUTION: A correction path 65 is provided between a defect net 40 and a redundancy correction net 45 in a multilayer ceramic substrate. The defect net and the correction net are terminated at top vias 41 and 46 of the substrate. The defect net is electrically isolated from an electric correction structure by the use of laser, and a post-burning circuit is formed on and in the substrate. In addition, the passivation of an electric correction line 65 is performed. COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：JPH0925167A

公开(公告)日：1997-01-28

申请号：JP33144795

申请日：1995-12-20

Applicant: IBM ,  CARBORUNDUM CO

Inventor： CASEY JON A ,  CORDERO CARLA N ,  FASANO BENJAMIN V ,  GOLAND DAVID B ,  HANNON ROBERT ,  HARRIS JONATHAN H ,  HERRON LESTER W ,  JOHNSON GREGORY M ,  PATEL NIRANJAN M ,  REITTER ANDREW M ,  SHINDE SUBHASH L ,  VALLABHANENI RAO V ,  YOUNGMAN ROBERT A

IPC: B32B18/00 ,  B22F7/02 ,  C04B35/581 ,  C04B37/02 ,  C04B41/51 ,  C04B41/52 ,  C04B41/88 ,  C04B41/89 ,  C22C29/16 ,  H01L21/48 ,  H01L23/373 ,  H05K1/03 ,  H05K3/24 ,  H05K3/40 ,  H05K3/46

公开(公告)号：CA1308817C

公开(公告)日：1992-10-13

申请号：CA593138

申请日：1989-03-08

Applicant: IBM

Inventor： BAISE ARNOLD I ,  CASEY JON A ,  CLARKE DAVID R ,  DIVAKARUNI RENUKA S ,  DUNKEL WERNER E ,  HUMENIK JAMES N ,  KANDETZKE STEVEN M ,  KIRBY DANIEL P ,  KNICKERBOCKER JOHN U ,  MATTS AMY T ,  TAKACS MARK A ,  WIGGINS LOVELL B

IPC: H05K1/03 ,  C04B41/48 ,  C04B41/49 ,  H01L21/48 ,  H01L23/08 ,  H01L23/538 ,  H05K3/40 ,  H01L23/14

Abstract: The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addressed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength. FI9-86-046

公开(公告)号：AU2002249166A1

公开(公告)日：2002-07-30

申请号：AU2002249166

申请日：2002-01-16

Applicant: IBM

Inventor： NATARAJAN GOVINDARAJAN ,  TERPENING ARNOLD W ,  FLACK AMY C ,  WEISMAN RENEE L ,  CASEY JON A ,  PASCO ROBERT W ,  BESAMA RASCHID J

IPC: B28B11/00 ,  B32B18/00 ,  H05K1/03 ,  H05K3/46 ,  C04B33/30 ,  H01L23/498 ,  H01L21/48 ,  C04B35/622

Abstract: A method of processing greensheets, wherein the following steps are performed:a) providing a greensheet having a width, length, thickness, a first side and a second side;b) bonding to the first side of the greensheet at least one strip, wherein the strip lies in a first plane;c) bonding to the second side of the green sheet at least one strip, wherein the strip lies in a second plane;d) processing the greensheet; ande) removing the strips from the processed greensheet.