公开(公告)号：FR2356318A1

公开(公告)日：1978-01-20

申请号：FR7716037

申请日：1977-05-17

Applicant: IBM

Inventor： BLUMBERG RICHARD J ,  DORLER JACK A

IPC: H03K19/086 ,  H03K17/60 ,  H03K17/62 ,  H03K17/66

Abstract: CURRENT SWITCH CIRCUIT HAVING AN ACTIVE LOAD An improved current switch circuit which has an active load is disclosed. The active load comprises a current source at the collectors of switch transistors which generates a current which is less than the current generated by the current source at the emitters of the switch transistors. The active load also includes a circuit for supplying the current difference between source currents as a supplementary current to the current source at the emitters when the associated switch transistors are conductive and a circuit for diverting the source current at the collectors when the switch transistors are non-conduc-tive. Depending on the current generated by the current sources, the performance of the circuit can be selected to optimize power dissipation versus switching speed. The circuit uses a minimum of resistors and a minimum amount of semiconductor area and thereby ensures low power dissipation.

公开(公告)号：CA1023856A

公开(公告)日：1978-01-03

申请号：CA171591

申请日：1973-05-15

Applicant: IBM

Inventor： DORLER JACK A ,  FORNERIS JOHN L ,  SWIETEK DONALD J

IPC: G11C11/41 ,  G11C11/39 ,  G11C13/00 ,  G11C17/14 ,  G11C17/16 ,  H01L27/00 ,  H01L27/102 ,  H01L29/47 ,  H01L29/86 ,  H01L29/872 ,  G11C11/34

Abstract: A process for forming a non-volatile storage element having symmetrical characteristics comprising the steps of forming a pair of back-to-back Schottky barrier diodes on a monolithic substrate and selectively passing current between the Schottky barrier diodes in opposite directions in order to form a non-volatile bistable storage element.

公开(公告)号：CA1000418A

公开(公告)日：1976-11-23

申请号：CA240987

申请日：1975-12-03

Applicant: IBM

Inventor： DORLER JACK A ,  FORNERIS JOHN L ,  SWIETEK DONALD J