公开(公告)号：US3924264A

公开(公告)日：1975-12-02

申请号：US48838874

申请日：1974-07-15

Applicant: IBM

Inventor： DORLER JACK A ,  FORNERIS JOHN L ,  SWIETEK DONALD J

IPC: G11C17/06 ,  H01L27/00 ,  H01L29/48 ,  H01L23/48

CPC classification number: G11C17/06 ,  H01L27/00

Abstract: A Schottky barrier diode suitable for implementation in monolithic form for multi-functioned circuit applications comprising a semiconductor substrate and Schottky barrier diodes, each comprising a more than one metal fixed system contacting the semiconductor substrate for forming Schottky barrier junctions.

Abstract translation: 适用于多功能电路应用的单片形式的肖特基势垒二极管，其包括半导体衬底和肖特基势垒二极管，每个包括与用于形成肖特基势垒结的半导体衬底接触的多于一个的金属固定系统。

公开(公告)号：CA999937A

公开(公告)日：1976-11-16

申请号：CA170061

申请日：1973-04-24

Applicant: IBM

Inventor： DORLER JACK A ,  SWIETEK DONALD J

IPC: G05F3/22 ,  H03K19/086

Abstract: A voltage regulator circuit for energizing a constant current source for use in a current switch logic scheme.

公开(公告)号：FR2330220A1

公开(公告)日：1977-05-27

申请号：FR7313797

申请日：1973-04-10

Applicant: IBM

Inventor： DORLER JACK A ,  SWIETEK DONALD J

IPC: G05F3/22 ,  H03K19/086 ,  H03K17/66

Abstract: A voltage regulator circuit for energizing a constant current source for use in a current switch logic scheme.

公开(公告)号：CA985795A

公开(公告)日：1976-03-16

申请号：CA159058

申请日：1972-12-13

Applicant: IBM

Inventor： DORLER JACK A ,  FORNERIS JOHN L ,  SWIETEK DONALD J

IPC: G11C17/00 ,  G11C17/06 ,  G11C17/08 ,  H01L21/00 ,  H01L27/00 ,  H01L27/102

Abstract: A monolithic Schottky barrier diode read-only memory comprising a semiconductor substrate having more than one separate and distinctly functional integrated circuit means located thereon. A plurality of Schottky barrier diodes comprising a more than one metal system contact the semi-conductor substrate for forming a plurality of Schottky barrier diode junctions. A separate Schottky barrier diode comprising a corresponding more than one metal system is incorporated into the other separate and distinctly functional integrated circuit means for addressing the Schottky barrier diode and sensing information therefrom. Interconnection metallurgy corresponding to the more than one metal system connects the plurality of separate and distinctly functional integrated circuit means and forms a continuous electrical path with the more than one metal system forming the Schottky barrier diodes.

公开(公告)号：CA1023856A

公开(公告)日：1978-01-03

申请号：CA171591

申请日：1973-05-15

Applicant: IBM

Inventor： DORLER JACK A ,  FORNERIS JOHN L ,  SWIETEK DONALD J

IPC: G11C11/41 ,  G11C11/39 ,  G11C13/00 ,  G11C17/14 ,  G11C17/16 ,  H01L27/00 ,  H01L27/102 ,  H01L29/47 ,  H01L29/86 ,  H01L29/872 ,  G11C11/34

Abstract: A process for forming a non-volatile storage element having symmetrical characteristics comprising the steps of forming a pair of back-to-back Schottky barrier diodes on a monolithic substrate and selectively passing current between the Schottky barrier diodes in opposite directions in order to form a non-volatile bistable storage element.

公开(公告)号：CA1000418A

公开(公告)日：1976-11-23

申请号：CA240987

申请日：1975-12-03

Applicant: IBM

Inventor： DORLER JACK A ,  FORNERIS JOHN L ,  SWIETEK DONALD J