THICK FILM CAPACITOR HAVING VERY LOW INTERNAL INDUCTANCE

    公开(公告)号:CA1148227A

    公开(公告)日:1983-06-14

    申请号:CA364207

    申请日:1980-11-07

    Applicant: IBM

    Abstract: Thick Film Capacitor Having Very Low Internal Inductance A decoupling capacitor for highly integrated, fast switching logic circuit modules. The capacitor comprises stacked ceramic sheets having metallized surfaces. The sheets are connected together in groups. Alternate groups are connected to a first electrode. Intervening alternate groups are connected to a second electrode. The connections are all made to the same ends of all the sheets so that the current flows in opposite directions through adjacent facing plates. FI 9-79-059

    PACKAGE FOR MOUNTING AND INTERCONNECTING A PLURALITY OF LARGE SCALE INTEGRATED SEMICONDUCTOR DEVICES

    公开(公告)号:CA1137647A

    公开(公告)日:1982-12-14

    申请号:CA349746

    申请日:1980-04-14

    Applicant: IBM

    Abstract: IMPROVED PACKAGE FOR MOUNTING AND INTERCONNECTING A PLURALITY OF LARGE SCALE INTEGRATED SEMICONDUCTOR DEVICES A package for mounting interconnecting, and cooling a large number of integrated circuit semiconductor devices having a sintered multilayer ceramic substrate provided with an internal metallurgy network made up of voltage planes, X and Y signal planes, and fan-out planes, with I/O pins on the bottom surface and a plurality of asymmetrical solder pad clusters for flip chip bonding to a plurality of integrated circuit devices on the top surface, a plurality of integrated circuit devices bonded to the solder pad clusters, at least one row elongated engineering change pads surrounding each pad cluster, each pad provided with a severable surface link, the I/O pins connected to the internal network of the substrate and arranged in clusters with the powering voltages of each device located directly beneath the device thereby minimizing voltage drop, and signal voltages inputted through the I/O pins interspersed between the clusters of power pins, a cap for forming an enclosure over at least the top surface of the ceramic substrate, and a liquid cooling means associated with the cap for removing heat from the devices. FI 9-79-045

    IMPROVEMENTS RELATING TO SEMICONDUCTOR WAFERS

    公开(公告)号:GB1236404A

    公开(公告)日:1971-06-23

    申请号:GB4666370

    申请日:1968-05-09

    Applicant: IBM

    Abstract: 1,236,404. Integrated circuits. INTERNATIONAL BUSINESS MACHINES CORP. 9 May, 1968 [23 May, 1967], No. 46663/70. Divided out of 1,236,401. Heading H1K. The disclosure is identical with that of Specification 1,236,401 from which the present application is divided but the claims relate to a semi-conductor wafer comprising a plurality of areas each including a number of devices interconnected to form a circuit, the areas being in a co-ordinate array to permit dicing by intersecting sets of cuts and each being provided with a graded mark on two of its edges to permit a visual indication of the accuracy of dicing.

    IMPROVEMENTS RELATING TO A SEMICONDUCTOR RESISTOR

    公开(公告)号:GB1236403A

    公开(公告)日:1971-06-23

    申请号:GB4666270

    申请日:1968-05-09

    Applicant: IBM

    Abstract: 1,236,403. Integrated circuit resistors. INTERNATIONAL BUSINESS MACHINES CORP. 9 May, 1968 [23 May, 1967], No. 46662/70. Divided out of 1,236,401. Heading H1K. The disclosure is identical with that of Specification 1,236,401 from which the present application is divided. The claims are to a resistor comprising a substrate of one conductivity type (say P type) with an elongate low resistivity inclusion of the opposite (N) type in one surface coverisd by a high resistivity N type region surrounded by an isolating ring which extends to the substrate, the region having in its surface a pair of elongate low resistivity N type contact regions disposed near the ends of the aforementioned inclusion with their axes orthogonal to its axis, and having a length exceeding the width of the inclusion at the respective points of crossing.

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