公开(公告)号：DE3380614D1

公开(公告)日：1989-10-26

申请号：DE3380614

申请日：1983-03-15

Applicant: IBM

Inventor： GLANG REINHARD ,  KU SAN-MEI ,  SCHMITT ALFRED

IPC: H01L29/73 ,  H01L21/02 ,  H01L21/265 ,  H01L21/3215 ,  H01L21/331 ,  H01L21/822 ,  H01L21/8222 ,  H01L27/01 ,  H01L27/04 ,  H01L21/31

Abstract: A method for making polycrystalline silicon film resistors is described which includes deposition of a polycrystalline silicon layer (14, 34) of very fine grain size upon an insulator surface (12, 28), followed by ion implantation of boron equal to or slightly in excess of the solubility limit of the polycrystalline silicon. This ion implantation is normally done using a screen silicon dioxide surface layer. The structure may be annealed at temperatures of between 800°C to 1100°C for 15 to 180 minutes to control the grain size of the polycrystalline silicon layer, homogenize the distribution of the boron ions throughout the entire film thickness and to raise the concentration of the boron in the silicon grains to the solid solubility limit. The suitable electrical contacts (52, 54) are now made to the polycrystalline silicon layer to form the resistor.

公开(公告)号：CA891177A

公开(公告)日：1972-01-18

申请号：CA891177D

Applicant: IBM

Inventor： BEAUDOUIN PIERRE L ,  GLANG REINHARD ,  RISEMAN JACOB

IPC: H01L21/00 ,  H01L23/485 ,  H01L23/522

公开(公告)号：CA890379A

公开(公告)日：1972-01-11

申请号：CA890379D

Applicant: IBM

Inventor： GLANG REINHARD ,  HOLMWOOD RICHARD A ,  MAISSEL LEON I ,  VERGNOLLE JEAN

公开(公告)号：DE1648241A1

公开(公告)日：1971-03-18

申请号：DEJ0035377

申请日：1967-12-29

Applicant: IBM

Inventor： GLANG REINHARD ,  I MAISSEL LEON

IPC: G01K7/22 ,  G01K13/00 ,  G01K

公开(公告)号：CA814649A

公开(公告)日：1969-06-03

申请号：CA814649D

Applicant: IBM

Inventor： LESSOR ARTHUR E JR ,  GLANG REINHARD