公开(公告)号：DE69836313T2

公开(公告)日：2007-04-19

申请号：DE69836313

申请日：1998-12-01

Applicant: IBM

Inventor： UZOH CYPRIAN E ,  GRECO STEPHEN E

IPC: C25D5/02 ,  H01L21/768 ,  C23C18/31 ,  C25D7/12 ,  H01L21/288 ,  H01L21/3205

Abstract: Recesses in a semiconductor structure are selectively plated by providing electrical insulating layer over the semiconductor substrate and in the recesses followed by forming a conductive barrier over the insulating layer; providing a plating seed layer over the barrier layer; depositing and patterning a photoresist layer over the plating seed layer; planarizing the insulated horizontal portions by removing the horizontal portions of the seed layer between the recesses; removing the photoresist remaining in the recesses; and then electroplating the patterned seed layer with a conductive metal using the barrier layer to carry the current during the electroplating to thereby only plate on the seed layer. In an alternative process, a barrier film is deposited over recesses in an insulator. Then, relatively thick resists are lithographically defined on the field regions, on top of the barrier film over the recesses. A plating base or seedlayer is deposited, so as to be continuous on the horizontal regions of the recesses in the insulator, but discontinuous on their surround wall. The recesses are then plated using the barrier film without seedlayers at the periphery of the substrate wafers for electrical contact. After electroplating, the resist is removed by lift-off process and exposed barrier film is etched by RIE method or by CMP. Also provided is a semiconductor structure obtained by the above processes.

公开(公告)号：DE69323628D1

公开(公告)日：1999-04-01

申请号：DE69323628

申请日：1993-04-29

Applicant: IBM

Inventor： GRECO STEPHEN E ,  SRIKRISHNAN KRIS

IPC: H01L21/768 ,  H01L23/12 ,  H01L23/29 ,  H01L23/522 ,  H01L23/532 ,  H01L23/485

Abstract: An integrated circuit having organic dielectric between interconnection layers eliminates damage caused by vapors outgassing from the organic dielectric by the use of a two-component organic layer having a breathable etch resistant organic layer above the main organic dielectric layer, both of the organic layers remaining in the final circuit. The etch resistant layer is resistant to the etchant used to pattern the layer of interconnect above the organic dielectric.

公开(公告)号：CA1218553A

公开(公告)日：1987-03-03

申请号：CA501729

申请日：1986-02-12

Applicant: IBM

Inventor： GRECO STEPHEN E ,  GREEN DENNIS C

IPC: C08F12/00 ,  C08F12/34 ,  G03F7/023 ,  G03F7/028 ,  G03F7/038 ,  H01L21/027 ,  G03C1/71

Abstract: A film forming, radiation sensitive resist composition having improved thermal stability and a reduced dissolution rate in developer solutions, comprised of a sensitizer and a polyalkenyl phenol such as a polyvinyl phenol cross-linked, prior to irradiation, with a polyfunctional cross-linking agent such as dimethylol pcresol or hexamethylene tetramine.