公开(公告)号：DE602004008429T2

公开(公告)日：2008-05-21

申请号：DE602004008429

申请日：2004-01-21

Applicant: QIMONDA AG ,  IBM

Inventor： GUPTA ARUNAVA ,  LOW KIA-SENG

IPC: H01L43/12 ,  H01F10/32 ,  H01F41/30 ,  H01L43/08

公开(公告)号：DE69818166T2

公开(公告)日：2004-07-22

申请号：DE69818166

申请日：1998-06-25

Applicant: IBM

Inventor： BOJARCZUK JR ,  GUHA SUPRATIK ,  GUPTA ARUNAVA ,  TANG WADE WAI-CHUNG

IPC: B41M5/26 ,  G11B7/00 ,  G11B7/004 ,  G11B7/0045 ,  G11B7/005 ,  G11B7/24 ,  G11B7/243 ,  G11B7/253

Abstract: This invention provides phase change media for optical storage based on semiconductors of nitrides of the column III metals. The surface of thin films of these wide bandgap semiconductors may be metallized (by desorption of the nitrogen) by irradiating with photons of energy equal to, or greater than the band gap of these materials, and with power densities beyond a critical threshold value. As a consequence of such writable metallization, these materials are excellent candidates for write once, read many times storage media since the differences in the reflectivity between the metal and its corresponding wide gap nitride are very large. Furthermore, once the nitrogen is desorbed, the written metallic phase can no longer revert back to the nitride phase and hence the media is stable and is truly a write-once system. Additional advantages offered by these materials over present day phase change media include higher differences in reflectivity contrast and suitability for use with short wavelength laser diodes (460 nm and lower) which are expected to be introduced into optical recording technology in the next 5 years. The band gap of alloys of nitrides of column III metals can be tuned by changing the relative fractions of the column III metals to continuously vary the band gap so as to be compatible with lasers having photon energies within the range. The low absorptivity and hence high transmissitivity, at the appropriate recording wavelength, of the starting phase also offers the potential application of these materials in a multiple-recording-layer format.

公开(公告)号：CA1335955C

公开(公告)日：1995-06-20

申请号：CA595451

申请日：1989-03-31

Applicant: IBM

Inventor： GALLAGHER WILLIAM J ,  GIESS EDWARD A ,  GUPTA ARUNAVA ,  LAIBOWITZ ROBERT B ,  O'SULLIVAN EUGENE J M ,  SANDSTROM ROBERT L

IPC: C01G3/00 ,  C01B13/14 ,  C01G1/00 ,  C04B41/89 ,  C30B23/02 ,  C30B25/18 ,  C30B29/22 ,  H01B12/06 ,  H01B13/00 ,  H01L39/14 ,  H01L39/22 ,  H01L39/24 ,  H01P3/08 ,  H01L39/12

Abstract: High Tc oxide superconductive films can be formed on gallate layers, where the gallate layers include a rare earth element or a rare earth-like element. Combinations of rare earth elements and rare earth-like elements can also be utilized. The superconductive films can be epitaxially deposited on these gallate layers to form single crystals or, in the minimum, highly oriented superconductive layers. Any high Tc superconductive oxide material can be utilized, but the best lattice matches are to superconductive materials including copper oxides. Examples include Y-Ba-Cu-O systems, Bi-based systems and T1-based systems.

公开(公告)号：CA2006229A1

公开(公告)日：1990-09-14

申请号：CA2006229

申请日：1989-12-20

Applicant: IBM

Inventor： BECKHAM KEITH F ,  CHALLENER DAVID C ,  GUPTA ARUNAVA ,  HARVILCHUCK JOSEPH M ,  LEAS JAMES M ,  LLOYD JAMES R ,  LONG DAVID C ,  QUINONES HORATIO ,  SESHAN KRISHNA ,  SHATZKES MORRIS

IPC: B23K26/00 ,  H01L21/3205 ,  H01L21/82 ,  H01L23/52 ,  H01L23/525 ,  H05K3/22 ,  G01R31/26

Abstract: METHOD AND APPARATUS FOR CAUSING AN OPEN CIRCUIT IN A CONDUCTIVE LINE A method for causing an open circuit in an electrical conductor is provided, including the steps of: conducting a direct current through the conductor; and applying heat at a selected location on the conductor whereat it is desired to cause the open circuit of the conductor. . FI9-88-027

公开(公告)号：DE602004008429D1

公开(公告)日：2007-10-04

申请号：DE602004008429

申请日：2004-01-21

Applicant: QIMONDA AG ,  IBM

Inventor： GUPTA ARUNAVA ,  LOW KIA-SENG

IPC: H01L43/12 ,  H01F10/32 ,  H01F41/30 ,  H01L43/08

公开(公告)号：DE69818166D1

公开(公告)日：2003-10-23

申请号：DE69818166

申请日：1998-06-25

Applicant: IBM

Inventor： BOJARCZUK JR ,  GUHA SUPRATIK ,  GUPTA ARUNAVA ,  TANG WADE WAI-CHUNG

IPC: B41M5/26 ,  G11B7/00 ,  G11B7/004 ,  G11B7/0045 ,  G11B7/005 ,  G11B7/24 ,  G11B7/243 ,  G11B7/253

Abstract: This invention provides phase change media for optical storage based on semiconductors of nitrides of the column III metals. The surface of thin films of these wide bandgap semiconductors may be metallized (by desorption of the nitrogen) by irradiating with photons of energy equal to, or greater than the band gap of these materials, and with power densities beyond a critical threshold value. As a consequence of such writable metallization, these materials are excellent candidates for write once, read many times storage media since the differences in the reflectivity between the metal and its corresponding wide gap nitride are very large. Furthermore, once the nitrogen is desorbed, the written metallic phase can no longer revert back to the nitride phase and hence the media is stable and is truly a write-once system. Additional advantages offered by these materials over present day phase change media include higher differences in reflectivity contrast and suitability for use with short wavelength laser diodes (460 nm and lower) which are expected to be introduced into optical recording technology in the next 5 years. The band gap of alloys of nitrides of column III metals can be tuned by changing the relative fractions of the column III metals to continuously vary the band gap so as to be compatible with lasers having photon energies within the range. The low absorptivity and hence high transmissitivity, at the appropriate recording wavelength, of the starting phase also offers the potential application of these materials in a multiple-recording-layer format.

公开(公告)号：SG65774A1

公开(公告)日：1999-06-22

申请号：SG1998001769

申请日：1998-07-13

Applicant: IBM

Inventor： BOJARCZUK NESTOR ALEXANDER JR ,  GUHA SUPRATIK ,  GUPTA ARUNAVA ,  TANG WADE WAI-CHUNG

IPC: B41M5/26 ,  G11B7/00 ,  G11B7/004 ,  G11B7/0045 ,  G11B7/005 ,  G11B7/24 ,  G11B7/243 ,  G11B7/253 ,  B32B3/00 ,  G11B11/12

Abstract: This invention provides phase change media for optical storage based on semiconductors of nitrides of the column III metals. The surface of thin films of these wide bandgap semiconductors may be metallized (by desorption of the nitrogen) by irradiating with photons of energy equal to, or greater than the band gap of these materials, and with power densities beyond a critical threshold value. As a consequence of such writable metallization, these materials are excellent candidates for write once, read many times storage media since the differences in the reflectivity between the metal and its corresponding wide gap nitride are very large. Furthermore, once the nitrogen is desorbed, the written metallic phase can no longer revert back to the nitride phase and hence the media is stable and is truly a write-once system. Additional advantages offered by these materials over present day phase change media include higher differences in reflectivity contrast and suitability for use with short wavelength laser diodes (460 nm and lower) which are expected to be introduced into optical recording technology in the next 5 years. The band gap of alloys of nitrides of column III metals can be tuned by changing the relative fractions of the column III metals to continuously vary the band gap so as to be compatible with lasers having photon energies within the range. The low absorptivity and hence high transmissitivity, at the appropriate recording wavelength, of the starting phase also offers the potential application of these materials in a multiple-recording-layer format.