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11.发明专利
公开(公告)号：CA1027255A
公开(公告)日：1978-02-28
申请号：CA229878
申请日：1975-06-23
Applicant: IBM
Inventor： DAVIS DONALD E , HABEGGER MILLARD A , MOORE RICHARD D , WEBER EDWARD V , WOODARD OLLIE C
IPC: G05D3/12 , H01J37/304 , H01L21/027 , G01S5/15
Abstract: 1508903 Wave energy position finding INTERNATIONAL BUSINESS MACHINES CORP 23 May 1975 [27 June 1974] 22919/75 Heading G1A [Also in Division H4] The position of a registration mark on a target (e.g. a semi-conductor wafer) is detected by irradiating the mark with a beam of charged particles. The present invention is stated to be an improvement over the system described in Specification 1480562. As described, each mark 42, Fig. 17, consists of vertical and horizontal bars 44, 43 (raised portions or depressions), the position of the mark being determined from 20 horizontal (X) scans followed by 20 vertical (Y) scans, successive scans being in opposite directions. Peak signals corresponding to the edges of a bar are detected and applied to threshold circuitry which is updated during each scan. Diodes 45, 46 and 45', 46' detect radiation during X, Y scans respectively, the arrangement including extra diodes 47 and an extra lead going to a respective preamplifier 48-66 for noise suppression. X-scanning: The outputs 70, 71 from diodes 45, 46 contain peaks 72 &c. corresponding to the edges of a bar 44. These signals pass to a differential amplifier 69 via balancers 58, 60 which compensate for the fact that the mark being scanned will be nearer one diode than the other. The output 85, Fig. 13, from amplifier 69 contains positive and negative peaks 86, 87 corresponding to the edges of a bar. The signals are shown without any ramp component. Such component is removed in filter 89 to leave the peak signals plus a substantially constant residual baseline voltage, Figs. 14 and 15 (not shown). The output from filter 89 is fed via an AGC circuit 90 to positive and negative peak detectors 99, 100 and an averaging circuit 122. During the first scan, outputs 103, 104 from detectors 99, 100 are used to set the gain levels in AGC 90 for subsequent scans so as to compensate for the surface conditions on the wafer in the region of the mark being scanned. At the end of the first scan the contents of 99, 100, 122 are passed to stores 143, 128, 136 the outputs of which are combined by means of resistors 144, 140, 137 to produce positive and negative threshold signals 134 and 141 which are correlated with the residual baseline voltage. These signals pass via differential amplifiers 135, 142 to act as threshold levels for voltage comparators 118, 119 receiving signals from AGC 90 via a switch 116 (blocked during the first scan). During the second scan, fresh data is fed to detectors 99 &c. and stores 143 &c. and switch 116 is enabled to pass the output of AGC 90 to the comparators, outputs of which are however not used until the third scan. During the third and subsequent scans, comparators 118, 119 produce signals whenever the signals from AGC 90 cross the levels set during the preceding scan by amplifiers 135, 142. The ORed outputs from 118, 119 enable a gate 151, so that clockpulses 153 pass to a feedback channel 152 and a computer 19 which uses the detected-edge signals, averaged over the last 18 scans, to determine the location of mark 42. Since successive scans occur in opposite directions, stores 143, 136 incorporate means for reversing the sign of their outputs, so that detectors 99, 100 continue to detect the same edge of a bar 44 during successive scans. The Y-scan is then performed in the same way. The various blocks of Fig. 2 are described in detail with reference to Figs. 3-9 (not shown).
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公开(公告)号：DE2525235A1
公开(公告)日：1976-01-15
申请号：DE2525235
申请日：1975-06-06
Applicant: IBM
Inventor： DAVIS DONALD E , HABEGGER MILLARD A , MOORE RICHARD D , WEBER EDWARD V , WOODARD OLLIC C
IPC: G05D3/12 , H01J37/304 , H01L21/027 , H01J3/10
Abstract: 1508903 Wave energy position finding INTERNATIONAL BUSINESS MACHINES CORP 23 May 1975 [27 June 1974] 22919/75 Heading G1A [Also in Division H4] The position of a registration mark on a target (e.g. a semi-conductor wafer) is detected by irradiating the mark with a beam of charged particles. The present invention is stated to be an improvement over the system described in Specification 1480562. As described, each mark 42, Fig. 17, consists of vertical and horizontal bars 44, 43 (raised portions or depressions), the position of the mark being determined from 20 horizontal (X) scans followed by 20 vertical (Y) scans, successive scans being in opposite directions. Peak signals corresponding to the edges of a bar are detected and applied to threshold circuitry which is updated during each scan. Diodes 45, 46 and 45', 46' detect radiation during X, Y scans respectively, the arrangement including extra diodes 47 and an extra lead going to a respective preamplifier 48-66 for noise suppression. X-scanning: The outputs 70, 71 from diodes 45, 46 contain peaks 72 &c. corresponding to the edges of a bar 44. These signals pass to a differential amplifier 69 via balancers 58, 60 which compensate for the fact that the mark being scanned will be nearer one diode than the other. The output 85, Fig. 13, from amplifier 69 contains positive and negative peaks 86, 87 corresponding to the edges of a bar. The signals are shown without any ramp component. Such component is removed in filter 89 to leave the peak signals plus a substantially constant residual baseline voltage, Figs. 14 and 15 (not shown). The output from filter 89 is fed via an AGC circuit 90 to positive and negative peak detectors 99, 100 and an averaging circuit 122. During the first scan, outputs 103, 104 from detectors 99, 100 are used to set the gain levels in AGC 90 for subsequent scans so as to compensate for the surface conditions on the wafer in the region of the mark being scanned. At the end of the first scan the contents of 99, 100, 122 are passed to stores 143, 128, 136 the outputs of which are combined by means of resistors 144, 140, 137 to produce positive and negative threshold signals 134 and 141 which are correlated with the residual baseline voltage. These signals pass via differential amplifiers 135, 142 to act as threshold levels for voltage comparators 118, 119 receiving signals from AGC 90 via a switch 116 (blocked during the first scan). During the second scan, fresh data is fed to detectors 99 &c. and stores 143 &c. and switch 116 is enabled to pass the output of AGC 90 to the comparators, outputs of which are however not used until the third scan. During the third and subsequent scans, comparators 118, 119 produce signals whenever the signals from AGC 90 cross the levels set during the preceding scan by amplifiers 135, 142. The ORed outputs from 118, 119 enable a gate 151, so that clockpulses 153 pass to a feedback channel 152 and a computer 19 which uses the detected-edge signals, averaged over the last 18 scans, to determine the location of mark 42. Since successive scans occur in opposite directions, stores 143, 136 incorporate means for reversing the sign of their outputs, so that detectors 99, 100 continue to detect the same edge of a bar 44 during successive scans. The Y-scan is then performed in the same way. The various blocks of Fig. 2 are described in detail with reference to Figs. 3-9 (not shown).
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公开(公告)号：CA943658A
公开(公告)日：1974-03-12
申请号：CA97066
申请日：1970-10-30
Applicant: IBM
Inventor： HABEGGER MILLARD A
Abstract: Light deflection and scanning apparatus employing a nonreciprocal optical device as a part of an optical circulator. The device has the property that if light is projected to it in one direction it is totally reflected and if it is projected in a second direction it is totally transmitted. By employing this device, optical energy may be coupled into and out of the circulator. The circulator is adjusted so that the optical energy follows a slightly off axis path with each revolution. Electro-optic means of a segmented type are provided in the path of the light in the circulator. The segments are individually controllable for selecting the location of exiting of the light from the circulator.
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Patent Agency Ranking
公开(公告)号：CA939542A
公开(公告)日：1974-01-08
申请号：CA97034
申请日：1970-10-29
Applicant: IBM
Inventor： HABEGGER MILLARD A
Abstract: 1285640 Optical devices INTERNATIONAL BUSINESS MACHINES CORP 28 Oct 1970 [5 Nov 1969] 51102/70 Heading G2J An optical device comprises a birefringent element 30 disposed in a medium 31 having a refractive index substantially the same as the higher refractive index of the birefringent element, the element having a planar surface 52 which subtends an angle to the optical axis of the element 30 greater than the critical angle, such that light beam 40 propagated in a first direction along the optical axis is transmitted, and light beam 50 impinging on the planar surface in a second direction substantially coplanar with the optical axis and the normal to the planar surface and subtending an angle to the surface greater than the critical angle is either transmitted or reflected or split depending on its plane of polarization.
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公开(公告)号：CA1085065A
公开(公告)日：1980-09-02
申请号：CA282421
申请日：1977-07-11
Applicant: IBM
Inventor： DAVIS DONALD E , HABEGGER MILLARD A , YOURKE HANNON S
IPC: H01J37/304 , H01L21/26 , H01L21/66
Abstract: APPARATUS FOR DETECTING REGISTRATION MARKS ON A TARGET SUCH AS A SEMICONDUCTOR WAFER A square shaped beam of charged particles is passed over a registration mark in the surface of a semiconductor wafer. Signals produced by pairs of diode detectors located with their surfaces orthogonal to the direction of the beam scan will peak when the beam passes over each of the edges of the registration mark. Each of the signals is differentiated; the differentiated signals are added together; and the resultant signal is filtered and amplified to provide information regarding the position of the beam with respect to the wafer.
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公开(公告)号：FR2396286A1
公开(公告)日：1979-01-26
申请号：FR7818481
申请日：1978-06-13
Applicant: IBM
Inventor： HABEGGER MILLARD A
Abstract: An interferometer system and process for detecting etch rates in opaque materials, such as silicon or metal, has means for producing a pair of parallel light beams, one of which is directed to the surface of the opaque material and the other of which is directed to the surface of an adjacent transparent masking material. The rate of etch of the opaque material is determined by detecting and recording the changes of light intensity due to interference between the beam reflected from the opaque layer and the beam reflected from the opaque layer beneath the transparent masking material.
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公开(公告)号：CA974389A
公开(公告)日：1975-09-16
申请号：CA46956
申请日：1969-03-27
Applicant: IBM
Inventor： HABEGGER MILLARD A , SINCERBOX GLENN T
IPC: G03H1/10
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