Abstract:
Placement of coded indicia as etched lines in the kerf area of a semiconductor wafer. Scanning and image rotation are used to read out the indicia, which may be binary or frequency coded. Placement of the etched lines at a different angle from the circuit lines allows illumination of the etched lines with minimum interference from the circuit lines.
Abstract:
A beam of charged particles is stepped from one predetermined position to another to form a desired pattern on a semiconductor wafer to which the beam is applied in accordance with a predetermined pattern. Instead of the beam being stepped to each of the predetermined positions, there is a dynamic correction for the deviation of the actual position from its predetermined position so that the beam is applied to the deviated position rather than the predetermined position whereby the pattern is written within the boundaries of the writing field as determined by the location of four registration marks, which are in four separate positions or points in the field. Through location of each of the four registration marks, the writing field is precisely defined. Writing fields may be interconnected by the sharing of registration marks enabling the construction of chips which are larger than a single writing field.
Abstract:
A square-shaped electron beam is stepped from one predetermined position to another to form a desired pattern on each chip of a semiconductor wafer to which the beam is applied. During various times, e.g., the target stage is moving mechanically from one chip to the next one, the electron beam is blanked. The blanking aperture plate in the electron beam column is provided with a second sensing aperture. During a blanked phase, the condensor lens images the electron source on the sensing aperture of the blanking aperture plate. A sensing plate disposed beneath the blanking aperture monitors the beam current and provides a signal to an alignment servo. Error correction is carried out by moving the beam in small increments in two orthogonal directions until the sensing plate reads a maximum current.
Abstract:
A square-shaped beam of charged particles is passed over a registration mark, which is formed by a depression or a rise in the surface of a semiconductor wafer. When the beam passes over one edge of the mark, a positive peak signal is produced from a pair of diode detectors located with their surfaces orthogonal to the direction of the beam scan and a negative peak signal is produced when the beam passes over the other edge of the mark. The amplitudes of these peak signals are balanced so that they are substantially the same irrespective of the location of each of the diode detectors relative to the mark in comparison with the location of the other of the diode detectors relative to the mark. These peak signals are compared with positive and negative threshold signals in comparators with an output signal being produced from each of the comparators when its threshold signal is crossed. This enables location of each of the marks to be determined. The positive and negative threshold signals are set during the prior scan with the scans being in opposite directions. The peak to peak amplitude across the registration mark in a particular area is sampled during the first scan and used to provide an automatic gain factor for the remainder of the scans across the mark so that a substantially constant peak amplitude signal is transmitted to the comparators.
Abstract:
A square-shaped beam of charged particles is passed over a registration mark, which is formed by a depression in the surface of a semiconductor wafer. When the beam passes over one edge of the mark, a positive peak signal is produced while a negative peak signal is produced when the beam passes over the other edge of the mark. These positive and negative signals are compared with positive and negative threshold signals in comparators with an output signal being produced from each of the comparators when its threshold signal is crossed. This enables location of each of the edges of the mark to be determined. The positive and negative threshold signals are set for each of the areas of the wafer having one of the marks since different signal baseline voltages are produced by different areas of the wafer.
Abstract:
A square-shaped electron beam is stepped from one predetermined position to another to form a desired pattern on each chip of a semiconductor wafer to which the beam is applied. For each chip to which the beam is applied, the position of the chip relative to a predetermined position is determined and the distance in these positions is utilized to control the position of the electron beam to insure that the desired pattern is formed on each of the chips separately. Furthermore, the position of the beam is periodically checked against a calibration grid to ascertain any deviations in the beam from its initial position. These differences are applied to properly position the beam.
Abstract:
A square-shaped beam of charged particles is passed over a registration mark, which is formed by a depression in the surface of a semiconductor wafer. When the beam passes over one edge of the mark, a positive peak signal is produced while a negative peak signal is produced when the beam passes over the other edge of the mark. These positive and negative signals are compared with positive and negative threshold signals in comparators with an output signal being produced from each of the comparators when its threshold signal is crossed. This enables location of each of the edges of the mark to be determined. The positive and negative threshold signals are set for each of the areas of the wafer having one of the marks since different signal baseline voltages are produced by different areas of the wafer.
Abstract:
1508903 Wave energy position finding INTERNATIONAL BUSINESS MACHINES CORP 23 May 1975 [27 June 1974] 22919/75 Heading G1A [Also in Division H4] The position of a registration mark on a target (e.g. a semi-conductor wafer) is detected by irradiating the mark with a beam of charged particles. The present invention is stated to be an improvement over the system described in Specification 1480562. As described, each mark 42, Fig. 17, consists of vertical and horizontal bars 44, 43 (raised portions or depressions), the position of the mark being determined from 20 horizontal (X) scans followed by 20 vertical (Y) scans, successive scans being in opposite directions. Peak signals corresponding to the edges of a bar are detected and applied to threshold circuitry which is updated during each scan. Diodes 45, 46 and 45', 46' detect radiation during X, Y scans respectively, the arrangement including extra diodes 47 and an extra lead going to a respective preamplifier 48-66 for noise suppression. X-scanning: The outputs 70, 71 from diodes 45, 46 contain peaks 72 &c. corresponding to the edges of a bar 44. These signals pass to a differential amplifier 69 via balancers 58, 60 which compensate for the fact that the mark being scanned will be nearer one diode than the other. The output 85, Fig. 13, from amplifier 69 contains positive and negative peaks 86, 87 corresponding to the edges of a bar. The signals are shown without any ramp component. Such component is removed in filter 89 to leave the peak signals plus a substantially constant residual baseline voltage, Figs. 14 and 15 (not shown). The output from filter 89 is fed via an AGC circuit 90 to positive and negative peak detectors 99, 100 and an averaging circuit 122. During the first scan, outputs 103, 104 from detectors 99, 100 are used to set the gain levels in AGC 90 for subsequent scans so as to compensate for the surface conditions on the wafer in the region of the mark being scanned. At the end of the first scan the contents of 99, 100, 122 are passed to stores 143, 128, 136 the outputs of which are combined by means of resistors 144, 140, 137 to produce positive and negative threshold signals 134 and 141 which are correlated with the residual baseline voltage. These signals pass via differential amplifiers 135, 142 to act as threshold levels for voltage comparators 118, 119 receiving signals from AGC 90 via a switch 116 (blocked during the first scan). During the second scan, fresh data is fed to detectors 99 &c. and stores 143 &c. and switch 116 is enabled to pass the output of AGC 90 to the comparators, outputs of which are however not used until the third scan. During the third and subsequent scans, comparators 118, 119 produce signals whenever the signals from AGC 90 cross the levels set during the preceding scan by amplifiers 135, 142. The ORed outputs from 118, 119 enable a gate 151, so that clockpulses 153 pass to a feedback channel 152 and a computer 19 which uses the detected-edge signals, averaged over the last 18 scans, to determine the location of mark 42. Since successive scans occur in opposite directions, stores 143, 136 incorporate means for reversing the sign of their outputs, so that detectors 99, 100 continue to detect the same edge of a bar 44 during successive scans. The Y-scan is then performed in the same way. The various blocks of Fig. 2 are described in detail with reference to Figs. 3-9 (not shown).
Abstract:
1329559 Programmed control INTERNATIONAL BUSINESS MACHINES CORP 3 Dec 1970 [15 Dec 1969] 57380/70 Heading G3N [Also in Division H1] A beam of charged particles, scanning in a raster over a workpiece, is precisely positioned by determining beam error with respect to a reference position, storing the error and correcting the raster position accordingly. As shown, an electron beam from a gun 10 is directed through a square aperture 12, which shapes it to a beam 11 of a size equal to the minimum line width of a raster pattern to be formed on a workpiece mounted on a table 29. The beam is electro-magnetically focussed by a coil 15 and passes between blanking plates 16. The beam 11 is then passed through a circular aperture 19, which passes only axial charged particles, so that a square shaped spot without distortion is produced. The beam is subjected to co-ordinate deflections by electromagnetic coils 21-24 and electro-static plates 25-28. The table 29 is moved in co-ordinate directions by motors 30, 31, 31'. To ascertain the correct focus and astigmatism of the beam 11 a grid 47 of copper foil is mounted on the table and the focus detected by a PIN diode, not shown, the output of which through an interface circuit 17 is interrogated by a computer 18 which provides signals to the circuit 17 for control of the electron beam. The calibration of the beam 11 is ascertained by use of a grid 60 of copper foil having a pattern with accurately dimensioned square openings. The beam is detected by a PIN diode, not shown, and the error is determined by and stored within the computer for subsequent use during the execution of a programmed electron beam machining operation on chips on a semi-conductor substrate positioned by co-ordinate movement of the table. The beam is moved across the substrate in a raster pattern by signals from the interface circuit to coils 21-24 under control of the computer and correction signals applied to plates 25-28. The beam is held stationary in a position determined by the programme by the application of a bucking sawtooth waveform to the X electrostatic plates 25, 26. It is stated that the electrostatic plates 25-26 could be replaced by high frequency electromagnetic coils and the focus grid 47 omitted and the calibration grid 60 utilized for focusing. Facilities are provided whereby, on substitution of a substrate, the table can be rotated by a motor, not shown, to the align the substrate with the scanning directions.