Method and apparatus for positioning a beam of charged particles
    2.
    发明授权
    Method and apparatus for positioning a beam of charged particles 失效
    用于定位充电颗粒束的方法和装置

    公开(公告)号:US3900736A

    公开(公告)日:1975-08-19

    申请号:US43758574

    申请日:1974-01-28

    Applicant: IBM

    CPC classification number: H01J37/147 H01J37/3045

    Abstract: A beam of charged particles is stepped from one predetermined position to another to form a desired pattern on a semiconductor wafer to which the beam is applied in accordance with a predetermined pattern. Instead of the beam being stepped to each of the predetermined positions, there is a dynamic correction for the deviation of the actual position from its predetermined position so that the beam is applied to the deviated position rather than the predetermined position whereby the pattern is written within the boundaries of the writing field as determined by the location of four registration marks, which are in four separate positions or points in the field. Through location of each of the four registration marks, the writing field is precisely defined. Writing fields may be interconnected by the sharing of registration marks enabling the construction of chips which are larger than a single writing field.

    Method and apparatus for aligning electron beams
    3.
    发明授权
    Method and apparatus for aligning electron beams 失效
    电子束对准的方法和装置

    公开(公告)号:US3894271A

    公开(公告)日:1975-07-08

    申请号:US39336573

    申请日:1973-08-31

    Applicant: IBM

    Abstract: A square-shaped electron beam is stepped from one predetermined position to another to form a desired pattern on each chip of a semiconductor wafer to which the beam is applied. During various times, e.g., the target stage is moving mechanically from one chip to the next one, the electron beam is blanked. The blanking aperture plate in the electron beam column is provided with a second sensing aperture. During a blanked phase, the condensor lens images the electron source on the sensing aperture of the blanking aperture plate. A sensing plate disposed beneath the blanking aperture monitors the beam current and provides a signal to an alignment servo. Error correction is carried out by moving the beam in small increments in two orthogonal directions until the sensing plate reads a maximum current.

    Abstract translation: 方形电子束从一个预定位置到另一个位置逐步形成在施加光束的半导体晶片的每个芯片上的期望图案。 在各种时期,例如目标阶段是从一个芯片机械移动到下一个芯片,电子束被消隐。 电子束列中的消隐孔板设置有第二感测孔。 在消隐阶段期间,聚光透镜将消隐孔板的感测孔上的电子源成像。 设置在消隐孔下方的检测板监测束电流并向对准伺服提供信号。 通过在两个正交方向上以小增量移动光束进行误差校正,直到感测板读取最大电流。

    Method and apparatus for detecting a registration mark on a target such as a semiconductor wafer
    4.
    发明授权
    Method and apparatus for detecting a registration mark on a target such as a semiconductor wafer 失效
    用于检测目标上的注册标记的方法和装置作为半导体波形

    公开(公告)号:US3901814A

    公开(公告)日:1975-08-26

    申请号:US48350974

    申请日:1974-06-27

    Applicant: IBM

    CPC classification number: H01J37/304

    Abstract: A square-shaped beam of charged particles is passed over a registration mark, which is formed by a depression or a rise in the surface of a semiconductor wafer. When the beam passes over one edge of the mark, a positive peak signal is produced from a pair of diode detectors located with their surfaces orthogonal to the direction of the beam scan and a negative peak signal is produced when the beam passes over the other edge of the mark. The amplitudes of these peak signals are balanced so that they are substantially the same irrespective of the location of each of the diode detectors relative to the mark in comparison with the location of the other of the diode detectors relative to the mark. These peak signals are compared with positive and negative threshold signals in comparators with an output signal being produced from each of the comparators when its threshold signal is crossed. This enables location of each of the marks to be determined. The positive and negative threshold signals are set during the prior scan with the scans being in opposite directions. The peak to peak amplitude across the registration mark in a particular area is sampled during the first scan and used to provide an automatic gain factor for the remainder of the scans across the mark so that a substantially constant peak amplitude signal is transmitted to the comparators.

    Method and apparatus for detecting a registration mark on a target such as a semiconductor wafer
    5.
    发明授权
    Method and apparatus for detecting a registration mark on a target such as a semiconductor wafer 失效
    用于检测诸如半导体晶片的靶上的配准标记的方法和装置

    公开(公告)号:US3875415A

    公开(公告)日:1975-04-01

    申请号:US43743474

    申请日:1974-01-28

    Applicant: IBM

    Inventor: WOODARD OLLIE C

    CPC classification number: H01J37/304

    Abstract: A square-shaped beam of charged particles is passed over a registration mark, which is formed by a depression in the surface of a semiconductor wafer. When the beam passes over one edge of the mark, a positive peak signal is produced while a negative peak signal is produced when the beam passes over the other edge of the mark. These positive and negative signals are compared with positive and negative threshold signals in comparators with an output signal being produced from each of the comparators when its threshold signal is crossed. This enables location of each of the edges of the mark to be determined. The positive and negative threshold signals are set for each of the areas of the wafer having one of the marks since different signal baseline voltages are produced by different areas of the wafer.

    Abstract translation: 一个方形的带电粒子束通过对准标记,该对准标记由半导体晶片表面的凹陷形成。 当光束通过标记的一个边缘时,产生正峰值信号,同时当光束通过标记的另一边缘时产生负峰值信号。 这些正和负信号与比较器中的正和负阈值信号进行比较,其中当其阈值信号被交叉时,从每个比较器产生输出信号。 这使得能够确定标记的每个边缘的位置。 由于晶片的不同区域产生不同的信号基线电压,因此为具有一个标记的晶片的每个区域设置正阈值信号和负阈值信号。

    Method and apparatus for controlling an electron beam
    6.
    发明授权
    Method and apparatus for controlling an electron beam 失效
    用于控制电子束的方法和装置

    公开(公告)号:US3644700A

    公开(公告)日:1972-02-22

    申请号:US3644700D

    申请日:1969-12-15

    Applicant: IBM

    CPC classification number: H01J37/3045 G05B19/39 G05B2219/42251 H01L21/00

    Abstract: A square-shaped electron beam is stepped from one predetermined position to another to form a desired pattern on each chip of a semiconductor wafer to which the beam is applied. For each chip to which the beam is applied, the position of the chip relative to a predetermined position is determined and the distance in these positions is utilized to control the position of the electron beam to insure that the desired pattern is formed on each of the chips separately. Furthermore, the position of the beam is periodically checked against a calibration grid to ascertain any deviations in the beam from its initial position. These differences are applied to properly position the beam.

    8.
    发明专利
    未知

    公开(公告)号:DE2502591A1

    公开(公告)日:1975-07-31

    申请号:DE2502591

    申请日:1975-01-23

    Applicant: IBM

    Inventor: WOODARD OLLIE C

    Abstract: A square-shaped beam of charged particles is passed over a registration mark, which is formed by a depression in the surface of a semiconductor wafer. When the beam passes over one edge of the mark, a positive peak signal is produced while a negative peak signal is produced when the beam passes over the other edge of the mark. These positive and negative signals are compared with positive and negative threshold signals in comparators with an output signal being produced from each of the comparators when its threshold signal is crossed. This enables location of each of the edges of the mark to be determined. The positive and negative threshold signals are set for each of the areas of the wafer having one of the marks since different signal baseline voltages are produced by different areas of the wafer.

    METHOD AND APPARATUS FOR DETECTING A REGISTRATION MARK ON A TARGET SUCH AS A SEMICONDUCTOR WAFER

    公开(公告)号:CA1027255A

    公开(公告)日:1978-02-28

    申请号:CA229878

    申请日:1975-06-23

    Applicant: IBM

    Abstract: 1508903 Wave energy position finding INTERNATIONAL BUSINESS MACHINES CORP 23 May 1975 [27 June 1974] 22919/75 Heading G1A [Also in Division H4] The position of a registration mark on a target (e.g. a semi-conductor wafer) is detected by irradiating the mark with a beam of charged particles. The present invention is stated to be an improvement over the system described in Specification 1480562. As described, each mark 42, Fig. 17, consists of vertical and horizontal bars 44, 43 (raised portions or depressions), the position of the mark being determined from 20 horizontal (X) scans followed by 20 vertical (Y) scans, successive scans being in opposite directions. Peak signals corresponding to the edges of a bar are detected and applied to threshold circuitry which is updated during each scan. Diodes 45, 46 and 45', 46' detect radiation during X, Y scans respectively, the arrangement including extra diodes 47 and an extra lead going to a respective preamplifier 48-66 for noise suppression. X-scanning: The outputs 70, 71 from diodes 45, 46 contain peaks 72 &c. corresponding to the edges of a bar 44. These signals pass to a differential amplifier 69 via balancers 58, 60 which compensate for the fact that the mark being scanned will be nearer one diode than the other. The output 85, Fig. 13, from amplifier 69 contains positive and negative peaks 86, 87 corresponding to the edges of a bar. The signals are shown without any ramp component. Such component is removed in filter 89 to leave the peak signals plus a substantially constant residual baseline voltage, Figs. 14 and 15 (not shown). The output from filter 89 is fed via an AGC circuit 90 to positive and negative peak detectors 99, 100 and an averaging circuit 122. During the first scan, outputs 103, 104 from detectors 99, 100 are used to set the gain levels in AGC 90 for subsequent scans so as to compensate for the surface conditions on the wafer in the region of the mark being scanned. At the end of the first scan the contents of 99, 100, 122 are passed to stores 143, 128, 136 the outputs of which are combined by means of resistors 144, 140, 137 to produce positive and negative threshold signals 134 and 141 which are correlated with the residual baseline voltage. These signals pass via differential amplifiers 135, 142 to act as threshold levels for voltage comparators 118, 119 receiving signals from AGC 90 via a switch 116 (blocked during the first scan). During the second scan, fresh data is fed to detectors 99 &c. and stores 143 &c. and switch 116 is enabled to pass the output of AGC 90 to the comparators, outputs of which are however not used until the third scan. During the third and subsequent scans, comparators 118, 119 produce signals whenever the signals from AGC 90 cross the levels set during the preceding scan by amplifiers 135, 142. The ORed outputs from 118, 119 enable a gate 151, so that clockpulses 153 pass to a feedback channel 152 and a computer 19 which uses the detected-edge signals, averaged over the last 18 scans, to determine the location of mark 42. Since successive scans occur in opposite directions, stores 143, 136 incorporate means for reversing the sign of their outputs, so that detectors 99, 100 continue to detect the same edge of a bar 44 during successive scans. The Y-scan is then performed in the same way. The various blocks of Fig. 2 are described in detail with reference to Figs. 3-9 (not shown).

    METHOD AND APPARATUS FOR CONTROLLING AN ELECTRON BEAM

    公开(公告)号:CA942429A

    公开(公告)日:1974-02-19

    申请号:CA99714

    申请日:1970-12-03

    Applicant: IBM

    Abstract: 1329559 Programmed control INTERNATIONAL BUSINESS MACHINES CORP 3 Dec 1970 [15 Dec 1969] 57380/70 Heading G3N [Also in Division H1] A beam of charged particles, scanning in a raster over a workpiece, is precisely positioned by determining beam error with respect to a reference position, storing the error and correcting the raster position accordingly. As shown, an electron beam from a gun 10 is directed through a square aperture 12, which shapes it to a beam 11 of a size equal to the minimum line width of a raster pattern to be formed on a workpiece mounted on a table 29. The beam is electro-magnetically focussed by a coil 15 and passes between blanking plates 16. The beam 11 is then passed through a circular aperture 19, which passes only axial charged particles, so that a square shaped spot without distortion is produced. The beam is subjected to co-ordinate deflections by electromagnetic coils 21-24 and electro-static plates 25-28. The table 29 is moved in co-ordinate directions by motors 30, 31, 31'. To ascertain the correct focus and astigmatism of the beam 11 a grid 47 of copper foil is mounted on the table and the focus detected by a PIN diode, not shown, the output of which through an interface circuit 17 is interrogated by a computer 18 which provides signals to the circuit 17 for control of the electron beam. The calibration of the beam 11 is ascertained by use of a grid 60 of copper foil having a pattern with accurately dimensioned square openings. The beam is detected by a PIN diode, not shown, and the error is determined by and stored within the computer for subsequent use during the execution of a programmed electron beam machining operation on chips on a semi-conductor substrate positioned by co-ordinate movement of the table. The beam is moved across the substrate in a raster pattern by signals from the interface circuit to coils 21-24 under control of the computer and correction signals applied to plates 25-28. The beam is held stationary in a position determined by the programme by the application of a bucking sawtooth waveform to the X electrostatic plates 25, 26. It is stated that the electrostatic plates 25-26 could be replaced by high frequency electromagnetic coils and the focus grid 47 omitted and the calibration grid 60 utilized for focusing. Facilities are provided whereby, on substitution of a substrate, the table can be rotated by a motor, not shown, to the align the substrate with the scanning directions.

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