公开(公告)号：CA1062658A

公开(公告)日：1979-09-18

申请号：CA275385

申请日：1977-03-30

Applicant: IBM

Inventor： HAVAS JANOS ,  LECHATON JOHN S ,  LOGAN JOSEPH S

IPC: H05K3/46 ,  H01L21/027 ,  H01L21/28 ,  H01L21/306 ,  H01L21/312 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/84 ,  H01L23/522 ,  H05K3/14 ,  C23C15/00

Abstract: MAKING COPLANAR LAYERS OF THIN FILMS A method for forming coplanar thin films, particularly conductor-insulator patterns, on a substrate. A pattern which includes a first thin film and an expendable material deposited thereon is formed on the substrate. The expendable material is selected so that it can be selectively removed by an etchant which does not attack the first thin film or an insulator which is to be deposited. The second thin film is deposited by RF sputtering at a bias which is sufficiently high to cause substantial reemission of the second film. This results in the covering of the exposed substrate surfaces and the upper surface of the material with the second film but leaving the side surfaces of the material exposed. The expendable material is then chemically etched so as to lift-off both the material and the second film deposited thereon, thereby leaving a coplanar pattern of first and second thin films.

公开(公告)号：DE69029586D1

公开(公告)日：1997-02-13

申请号：DE69029586

申请日：1990-10-15

Applicant: IBM

Inventor： DEAN ALICIA ,  FITZSIMMONS JOHN ,  HAVAS JANOS ,  MCCORMICK BARRY ,  SHAH PROBODH

IPC: G03F7/42 ,  H01L21/027 ,  H01L21/30

公开(公告)号：DE3576222D1

公开(公告)日：1990-04-05

申请号：DE3576222

申请日：1985-06-14

Applicant: IBM

Inventor： CHALOUX JR ,  HAVAS JANOS

IPC: H01L21/302 ,  G03F7/09 ,  H01L21/3065 ,  G03F7/36

公开(公告)号：FR2349956A1

公开(公告)日：1977-11-25

申请号：FR7705185

申请日：1977-02-18

Applicant: IBM

Inventor： HAVAS JANOS ,  LECHATON JOHN S ,  LOGAN JOSEPH S

IPC: H05K3/46 ,  H01L21/027 ,  H01L21/28 ,  H01L21/306 ,  H01L21/312 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/84 ,  H01L23/522 ,  H05K3/14 ,  H01L21/441 ,  H01L23/54

Abstract: A method for forming coplanar thin films, particularly conductor-insulator patterns, on a substrate. A pattern which includes a first thin film and an expendable material deposited thereon is formed on the substrate. The expendable material is selected so that it can be selectively removed by an etchant which does not attack the first thin film or an insulator which is to be deposited. The second thin film is deposited by RF sputtering at a bias which is sufficiently high to cause substantial reemission of the second film. This results in the covering of the exposed substrate surfaces and the upper surface of the material with the second film but leaving the side surfaces of the material exposed. The expendable material is then chemically etched so as to lift-off both the material and the second film deposited thereon, thereby leaving a coplanar pattern of first and second thin films.

公开(公告)号：DE2709986A1

公开(公告)日：1977-11-17

申请号：DE2709986

申请日：1977-03-08

Applicant: IBM

Inventor： HAVAS JANOS ,  LECHATON JOHN S ,  LOGAN JOSEPH SKINNER

IPC: H05K3/46 ,  H01L21/027 ,  H01L21/28 ,  H01L21/306 ,  H01L21/312 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/84 ,  H01L23/522 ,  H05K3/14 ,  H01L49/02 ,  H01L21/314

Abstract: A method for forming coplanar thin films, particularly conductor-insulator patterns, on a substrate. A pattern which includes a first thin film and an expendable material deposited thereon is formed on the substrate. The expendable material is selected so that it can be selectively removed by an etchant which does not attack the first thin film or an insulator which is to be deposited. The second thin film is deposited by RF sputtering at a bias which is sufficiently high to cause substantial reemission of the second film. This results in the covering of the exposed substrate surfaces and the upper surface of the material with the second film but leaving the side surfaces of the material exposed. The expendable material is then chemically etched so as to lift-off both the material and the second film deposited thereon, thereby leaving a coplanar pattern of first and second thin films.