公开(公告)号：DE3663312D1

公开(公告)日：1989-06-15

申请号：DE3663312

申请日：1986-10-21

Applicant: IBM

Inventor： SACHDEV KRISHNA G ,  KWONG RANEE W ,  KHOJASTEH MAHMOUD M ,  SACHDEV HARBANS S

IPC: G03F7/20 ,  G03F7/039 ,  G03F7/075 ,  H01L21/027 ,  G03F7/10

Abstract: A photoresist composition comprised of a radiation scissionable polymeric system having organopolysiloxane segments sensitized by an onium salt is disclosed. Useful organopolysiloxane containing polymers include polysiloxane-­polycarbonate block copolymers, and polyorganosiloxane polyaryl esters. The resist films produced from the photoresist compositions exhibit high sensitivity, high thermal stability and resistance to oxygen reactive ion etching which makes them desirable for dry etching processes to enable submicron resolution.