公开(公告)号：JPS62136638A

公开(公告)日：1987-06-19

申请号：JP25867886

申请日：1986-10-31

Applicant: IBM

Inventor： SACHDEV KRISHNA G ,  KWONG RANEE W ,  KHOJASTEH MAHMOUD M ,  SACHDEV HARBANS S

IPC: G03F7/20 ,  G03F7/039 ,  G03F7/075 ,  H01L21/027

公开(公告)号：CA1184149A

公开(公告)日：1985-03-19

申请号：CA407313

申请日：1982-07-15

Applicant: IBM

Inventor： BAISE ARNOLD I ,  BURNS JOHN M ,  SACHDEV HARBANS S

IPC: C23C14/02 ,  B05D7/24 ,  C08F2/52 ,  C08F30/02 ,  C08J7/00 ,  C23C14/04 ,  H01L21/312 ,  C23C11/00

Abstract: The adhesion of organic resins to substrate materials is increased by depositing on the substrate a coating of a plasma polymerized unsaturated organophosphine.

公开(公告)号：CA2090039A1

公开(公告)日：1992-03-19

申请号：CA2090039

申请日：1990-12-21

Applicant: IBM

Inventor： CONLEY WILLARD E ,  KWONG RANEE W ,  KVITEK RICHARD J ,  LANG ROBERT N ,  LYONS CHRISTOPHER F ,  MIURA STEVE S ,  MOREAU WAYNE M ,  SACHDEV HARBANS S ,  WOOD ROBERT L

IPC: G03F7/039 ,  G03F7/09 ,  G03F7/11 ,  H01L21/027 ,  G03F7/16

Abstract: 2090039 9205474 PCTABS00011 A protective material for use as an overcoating film for acid catalyzed resist compositions comprising a polymeric film forming compound, the films of which are impermeable to vapors of organic and inorganic bases.

公开(公告)号：CA1163435A

公开(公告)日：1984-03-13

申请号：CA384033

申请日：1981-08-17

Applicant: IBM

Inventor： KADEHJIAN LEO J ,  SACHDEV HARBANS S ,  SNYDER CLINTON D

IPC: C09D11/00 ,  C09D11/02

Abstract: An ink for use in ink jet printing has as its coloring material a dye having the formula: where R is -OCH2CO2, -CH2CO2-, -PO3= or -CH2-PO3=. SA980015

公开(公告)号：DE69300616T2

公开(公告)日：1996-05-30

申请号：DE69300616

申请日：1993-03-23

Applicant: IBM

Inventor： SACHDEV KRISHNA G ,  SACHDEV HARBANS S ,  WHITAKER JOEL R

IPC: G03F7/023 ,  C08G77/388 ,  C08G77/392 ,  G03F7/075 ,  H01L21/027 ,  H01L21/30 ,  C08G77/38

Abstract: Photo sensitive silicon-containing resist compositions comprising silsesquioxane and aromatic siloxane esters with diazonaphthoquinone sulfonyl groups for imageable O2 RIE barrier films, and method for using the same.

公开(公告)号：DE69300616D1

公开(公告)日：1995-11-16

申请号：DE69300616

申请日：1993-03-23

Applicant: IBM

Inventor： SACHDEV KRISHNA G ,  SACHDEV HARBANS S ,  WHITAKER JOEL R

IPC: G03F7/023 ,  C08G77/388 ,  C08G77/392 ,  G03F7/075 ,  H01L21/027 ,  H01L21/30 ,  C08G77/38

Abstract: Photo sensitive silicon-containing resist compositions comprising silsesquioxane and aromatic siloxane esters with diazonaphthoquinone sulfonyl groups for imageable O2 RIE barrier films, and method for using the same.

公开(公告)号：CA1217636A

公开(公告)日：1987-02-10

申请号：CA470463

申请日：1984-12-18

Applicant: IBM

Inventor： SACHDEV KRISHNA G ,  SACHDEV HARBANS S ,  AVIRAM ARI ,  WIZNER MARK A

IPC: B41M5/392 ,  B41J31/00 ,  B41J31/02 ,  B41M5/26 ,  G01D15/10

Abstract: IMPROVED CHEMICAL HEAT AMPLIFICATION IN THERMAL TRANSFER PRINTING Chemical heat amplification is provided in thermal transfer printing, wherein some of the heat necessary for melting and transferring ink from a solid fusible layer in a ribbon to a receiving medium is provided by an exothermic reaction. This chemical reaction is due to an exothermic material that is located in the ink layer, or in another layer of the ink bearing ribbon. The exothermic reaction reduces the amount of the input power which must be applied either electrically or with electromagnetic waves. Examples of suitable exothermic materials are those which will provide heat within the operative temperature range of the ink, and include hydrazone derivatives which are substantially colorless, and have a molecular weight in the approximate range 150-650.

公开(公告)号：DE3669211D1

公开(公告)日：1990-04-05

申请号：DE3669211

申请日：1986-05-16

Applicant: IBM

Inventor： KWONG RANEE W ,  SACHDEV HARBANS S ,  SACHDEV KRISHNA GANDHI

IPC: G03F7/039 ,  G03F7/075

公开(公告)号：DE3663312D1

公开(公告)日：1989-06-15

申请号：DE3663312

申请日：1986-10-21

Applicant: IBM

Inventor： SACHDEV KRISHNA G ,  KWONG RANEE W ,  KHOJASTEH MAHMOUD M ,  SACHDEV HARBANS S

IPC: G03F7/20 ,  G03F7/039 ,  G03F7/075 ,  H01L21/027 ,  G03F7/10

Abstract: A photoresist composition comprised of a radiation scissionable polymeric system having organopolysiloxane segments sensitized by an onium salt is disclosed. Useful organopolysiloxane containing polymers include polysiloxane-­polycarbonate block copolymers, and polyorganosiloxane polyaryl esters. The resist films produced from the photoresist compositions exhibit high sensitivity, high thermal stability and resistance to oxygen reactive ion etching which makes them desirable for dry etching processes to enable submicron resolution.

公开(公告)号：CA1212890A

公开(公告)日：1986-10-21

申请号：CA483492

申请日：1985-06-07

Applicant: IBM

Inventor： ANDERSON HERBERT R JR ,  SACHDEV HARBANS S ,  SACHDEV KRISHNA G

IPC: H01L21/3205 ,  G03F7/039 ,  H01L21/027 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/768 ,  H05K3/04 ,  H05K3/06

Abstract: USE OF DEPOLYMERIZABLE POLYMERS IN THE FABRICATION OF LIFT-OFF STRUCTURE FOR MULTILEVEL METAL PROCESSES An improved lift-off process for multilevel metal structure in the fabrication of integrated circuits by employing lift-off layer formed from polymers which undergo clean depolymerization under the influence of heat or radiation and allow rapid and residue-free release of an "expendable mask". An embedded interconnection metallurgy system is formed by application of the lift-off layer of this invention over a cured polymer film or on an oxygen RIE barrier layer previously deposited on organic or inorganic substrate, followed by another barrier over which is then coated a radiation sensitive resist layer. After definition of the desired resist pattern by imagewise exposure and development, the image is replicated into the barrier by sputter etching in a fluorine containing ambient and subsequently into the base layer down to the substrate by oxygen reactive ion etching which is followed by blanket metal evaporation and finally the lift-off by brief heat treatment at the depolymerization temperature of the lift-off layer, and brief solvent soak.