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公开(公告)号：EP1546813A4
公开(公告)日：2006-08-30
申请号：EP03815294
申请日：2003-09-11
Applicant: IBM
Inventor： KHOJASTEH MAHMOUD M , WONG RANEE W , CHEN KUANG-JUNG , VARANASI PUSHKARA RAO , ALLEN ROBERT D , BROCK PHILLIP , HOULE FRANCES , SOORIYAKUMARAN RATNAM
CPC classification number: G03F7/094 , G03F7/0397 , G03F7/0758 , Y10S430/106 , Y10S430/111 , Y10S430/115
Abstract: The silicon-containing resist compositions which have low silicon outgassing and high resolution lithographic performance, especially in bilayer or multilayer lithographic applications using 193 nm or shorter wavelength imaging radiation are enabled by the presence of an imaging polymer having silicon-containing, non-acid-labile pendant groups. The resist compositions of the invention are preferably further characterized by the substantial absence of silicon-containing acid-labile moieties.
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公开(公告)号：JPH11316460A
公开(公告)日：1999-11-16
申请号：JP3870299
申请日：1999-02-17
Applicant: IBM
Inventor： CHEN KUANG-JUNG , DELLAGUARDIA RONALD A , HUANG WU-SONG , KATNANI AHMAD D , KHOJASTEH MAHMOUD M , LIN QINGHUANG
IPC: H01L21/027 , G03F7/004 , G03F7/039
Abstract: PROBLEM TO BE SOLVED: To obtain high resolution and superior stability by incorporating a mix of at least two kinds of miscible polymer resins soluble in an aqueous base to make it useful for the blend of a positive type resist. SOLUTION: One of polymer resins soluble in an aq. base is partially protected with protective groups, having high activation energy and the other of the polymer resins soluble in an aqueous base is partially protected with protective groups having low activation energy. The polymer resin to be used is a homopolymer which is soluble in an alkali solution after being deprotected or a multiple polymer containing two or more kinds of repeating monomeric units e.g. a copolymer or a terpolymer and contains polar functional groups which ionize readily. The polar functional groups of the polymer resins are hydroxyl or carboxyl groups. The homopolymer which can be used as the polymer resin is especially preferably polyhydroxystyrene(PHS), and the para-type is most preferable.
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公开(公告)号：JPS62136638A
公开(公告)日：1987-06-19
申请号：JP25867886
申请日：1986-10-31
Applicant: IBM
Inventor： SACHDEV KRISHNA G , KWONG RANEE W , KHOJASTEH MAHMOUD M , SACHDEV HARBANS S
IPC: G03F7/20 , G03F7/039 , G03F7/075 , H01L21/027
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Patent Agency Ranking
公开(公告)号：DE68906954D1
公开(公告)日：1993-07-15
申请号：DE68906954
申请日：1989-03-15
Applicant: IBM
Inventor： DILLER RICHARD DANIEL , ARNOLD ANTHONY FRANCIS , CHANG YING YING NMN , COTTS PATRICIA METZGER , HOFER DONALD CLIFFORD , KHOJASTEH MAHMOUD M , MACY ELWOOD HERBERT , SHAH PRABODH RAMNIKLAL , VOLKSEN WILLI NMN
IPC: C09D179/08 , B05D5/12 , C08G73/10 , C08L79/08
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公开(公告)号：AU2003273924A1
公开(公告)日：2004-04-19
申请号：AU2003273924
申请日：2003-08-28
Applicant: IBM
Inventor： VARANASI PUSHKARA RAO , NISHIMURA YUKIO , KOBAYASHI EIICHI , KHOJASTEH MAHMOUD M , CHEN KUANG-JUNG
IPC: G03F7/039
Abstract: Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation and/or possibly other radiation and are developable to form resist structures of improved development characteristics and improved etch resistance are enabled by the use of resist compositions containing imaging polymer component comprising an acid-sensitive polymer having a monomeric unit with a pendant group containing a remote acid labile moiety.
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公开(公告)号：DE3663312D1
公开(公告)日：1989-06-15
申请号：DE3663312
申请日：1986-10-21
Applicant: IBM
Inventor： SACHDEV KRISHNA G , KWONG RANEE W , KHOJASTEH MAHMOUD M , SACHDEV HARBANS S
IPC: G03F7/20 , G03F7/039 , G03F7/075 , H01L21/027 , G03F7/10
Abstract: A photoresist composition comprised of a radiation scissionable polymeric system having organopolysiloxane segments sensitized by an onium salt is disclosed. Useful organopolysiloxane containing polymers include polysiloxane-polycarbonate block copolymers, and polyorganosiloxane polyaryl esters. The resist films produced from the photoresist compositions exhibit high sensitivity, high thermal stability and resistance to oxygen reactive ion etching which makes them desirable for dry etching processes to enable submicron resolution.
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公开(公告)号：AU2003303304A1
公开(公告)日：2004-08-23
申请号：AU2003303304
申请日：2003-09-11
Applicant: IBM
Inventor： WONG RANEE W , CHEN KUANG-JUNG , VARANASI PUSHKARA RAO , ALLEN ROBERT D , BROCK PHILLIP , HOULE FRANCES , SOORIYAKUMARAN RATNAM , KHOJASTEH MAHMOUD M
Abstract: The silicon-containing resist compositions which have low silicon outgassing and high resolution lithographic performance, especially in bilayer or multilayer lithographic applications using 193 nm or shorter wavelength imaging radiation are enabled by the presence of an imaging polymer having silicon-containing, non-acid-labile pendant groups. The resist compositions of the invention are preferably further characterized by the substantial absence of silicon-containing acid-labile moieties.
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公开(公告)号：DE68906954T2
公开(公告)日：1993-12-23
申请号：DE68906954
申请日：1989-03-15
Applicant: IBM
Inventor： DILLER RICHARD DANIEL , ARNOLD ANTHONY FRANCIS , CHANG YING YING NMN , COTTS PATRICIA METZGER , HOFER DONALD CLIFFORD , KHOJASTEH MAHMOUD M , MACY ELWOOD HERBERT , SHAH PRABODH RAMNIKLAL , VOLKSEN WILLI NMN
IPC: C09D179/08 , B05D5/12 , C08G73/10 , C08L79/08
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