公开(公告)号：DE68907559D1

公开(公告)日：1993-08-19

申请号：DE68907559

申请日：1989-10-21

Applicant: IBM

Inventor： ANGELO RAYMOND W ,  GELORME JEFFREY D ,  KUCZYNSKI JOSEPH P ,  LAWRENCE WILLIAM H ,  PAPPAS SOCRATES P ,  SIMPSON LOGAN L

IPC: C07C381/12 ,  C08G59/00 ,  C08G59/18 ,  C08G59/68 ,  G03F7/029

Abstract: Sulfonium salts of the formula: wherein Ar is a fused aromatic radical; R1 is a divalent organic bridge; each R2 and R3 individually is an alkyl, aryl, alkaryl, aralkyl or substituted aryl, provided that not more than one of R2 and R3 is alkyl; and A is a non-nucleophilic anion; use thereof and preparation thereof.

公开(公告)号：CA1301698C

公开(公告)日：1992-05-26

申请号：CA496012

申请日：1985-11-22

Applicant: IBM

Inventor： GELORME JEFFREY D ,  LAWRENCE WILLIAM H ,  SLOTA PETER JR

IPC: C08J7/00 ,  C08J7/12 ,  C23C18/22 ,  H05K3/18 ,  H05K3/38 ,  H05K3/10

Abstract: ROUGHENING SURFACE OF A SUBSTRATE The surface of a substrate is roughened by providing a substrate which comprises a resinous material and an inorganic particulate material; and etching a surface of the substrate to selectively etch the resinous material and thereby produce the roughened surface. The resinouse material can be thermoplastic or thermosetting, particularly those useful in preparing dielectric substrates employed in the preparation of integrated circuit modules. Inorganic particulate materials such as SiO2, CaCO3, Al2 O3, CaO2, SiC and CaF2, can be used, the preferred material being silica (SiO2). The preferred etching processes are the so-called "dry etching processes" such as plasma etching, sputter etching and reactive ion etching; which eliminate the need for wet chemical processing and all the attendant problems thereof. This roughening process results in greatly enhanced adhesion of the photosensitive materials to dielectric substrates.