公开(公告)号：DE3685842D1

公开(公告)日：1992-08-06

申请号：DE3685842

申请日：1986-04-11

Applicant: IBM

Inventor： JACKSON THOMAS NELSON ,  KIRCHNER PETER DANIEL ,  PETTIT GEORGE DAVID ,  RUTZ RICHARD FREDERICK ,  WOODALL JERRY MACPHERSON

IPC: H01L21/338 ,  H01L21/28 ,  H01L21/285 ,  H01L29/41 ,  H01L29/43 ,  H01L29/45 ,  H01L29/80 ,  H01L29/812

Abstract: An ohmic contact is formed to a device region in the surface of an extrinsic conductivity type group III-V semiconductor crystal (1) by providing a layer (3) of an amphoteric dopant on the surface of the crystal and providing in that layer, at the desired location of the ohmic contact, a localised quantity of atoms of the element of the crystal which is capable of imparting with the amphoteric dopant the aforesaid extrinsic conductivity type, and heating the structure to diffuse atoms from the layer into the surface of the crystal to form the ohmic contact. A layer of Si on GaAs upon heating normally forms a rectifying contact. If a region of the Si layer contains As atoms, an ohmic contact is formed on heating.

公开(公告)号：CA1247754A

公开(公告)日：1988-12-28

申请号：CA502699

申请日：1986-02-25

Applicant: IBM

Inventor： JACKSON THOMAS NELSON ,  KIRCHNER PETER DANIEL ,  PETTIT GEORGE DAVID ,  RUTZ RICHARD FREDERICK ,  WOODALL JERRY MACPHERSON

IPC: H01L21/338 ,  H01L21/28 ,  H01L21/285 ,  H01L29/41 ,  H01L29/43 ,  H01L29/45 ,  H01L29/80 ,  H01L29/812 ,  H01L21/72 ,  H01L27/04

Abstract: GROUP III-V SEMICONDUCTOR ELECTRICAL CONTACT A layer of an amphoteric dopant on the surface of a group III-V intermetallic semiconductor crystal will diffuse into the crystal surface in a heating cycle forming a stable contact. The contact can be ohmic or rectifying depending on the localized presence of an excess of one crystal ingredient. A layer of Si on GaAs upon heating forms a rectifying contact. When the layer of Si contains As, the contact is ohmic.