公开(公告)号：JPS61248470A

公开(公告)日：1986-11-05

申请号：JP445586

申请日：1986-01-14

Applicant: IBM

Inventor： JACKSON THOMAS NELSON ,  KIRCHNER PETER DANIEL ,  PETTIT GEORGE DAVID ,  RUTZ RICHARD FREDERICK ,  WOODALL JERRY MACPHERSON

IPC: H01L21/338 ,  H01L21/28 ,  H01L21/285 ,  H01L29/41 ,  H01L29/43 ,  H01L29/45 ,  H01L29/80 ,  H01L29/812

公开(公告)号：DE3176894D1

公开(公告)日：1988-11-03

申请号：DE3176894

申请日：1981-02-05

Applicant: IBM

Inventor： CHAPPELL TERRY IVAN ,  PETTIT GEORGE DAVID ,  WOODALL JERRY MCPHERSON

IPC: H01L29/80 ,  C25F3/12 ,  H01L21/306 ,  H01L21/3063 ,  H01L21/338 ,  H01L29/812 ,  H01L21/80

公开(公告)号：DE3379701D1

公开(公告)日：1989-05-24

申请号：DE3379701

申请日：1983-10-05

Applicant: IBM

Inventor： FREEOUF JOHN LAWRENCE ,  JACKSON THOMAS NELSON ,  OELHAFEN PETER UNIVERSITY OF B ,  PETTIT GEORGE DAVID ,  WOODALL JERRY MACPHERSON

IPC: H01L21/306 ,  H01L21/314 ,  H01L21/316 ,  H01L23/29 ,  H01L23/31 ,  H01L23/28

Abstract: A monocrystalline compound semiconductor substrate (1) is passivated with a layer (3) of the most volatile element of the semiconductor compound to prevent the formation of oxides that would interfere with further processing. A surface layer of arsenic is formed on a GaAs substrate by exposing the substrate to light having a photon energy greater than 1.8 eV, at a power density of 0.01 to 0.5 watts per cm for a period of 10 to 30 minutes while the substrate is immersed in a 1 : 1 HCl : H2O solution. The passivated substrate may be stored and handled in air. When desired, the As layer can be removed by low temperature baking, for example at 150 DEG to 300 DEG C.

公开(公告)号：DE3567555D1

公开(公告)日：1989-02-16

申请号：DE3567555

申请日：1985-06-11

Applicant: IBM

Inventor： JACKSON THOMAS NELSON ,  KIRCHNER PETER DANIEL ,  PETTIT GEORGE DAVID ,  WOODALL JERRY MACPHERSON

IPC: H01L29/41 ,  H01L21/28 ,  H01L21/285 ,  H01L29/43 ,  H01L29/45 ,  H01L29/40

Abstract: A metallic ohmic contact (1) is formed on the surface of an intermetallic compound semiconductor body (2) in which the net donor density of an amphoteric dopant is greater in a thin surface region extending into the body from the interface (3) between the contact (1) and the body (2) than in the bulk of the body (2). Preferably, the surface region has a net donor density greater than 5 x 10 atoms per cc and is 2 to 5 nm thick. The contact can be formed by growing a body of gallium arsenide in the presence of an arsenic over-pressure and a source of germanium or silicon and then depositing a metal on the surface of the body.

公开(公告)号：DE3685842T2

公开(公告)日：1993-02-04

申请号：DE3685842

申请日：1986-04-11

Applicant: IBM

Inventor： JACKSON THOMAS NELSON ,  KIRCHNER PETER DANIEL ,  PETTIT GEORGE DAVID ,  RUTZ RICHARD FREDERICK ,  WOODALL JERRY MACPHERSON

IPC: H01L21/338 ,  H01L21/28 ,  H01L21/285 ,  H01L29/41 ,  H01L29/43 ,  H01L29/45 ,  H01L29/80 ,  H01L29/812

Abstract: An ohmic contact is formed to a device region in the surface of an extrinsic conductivity type group III-V semiconductor crystal (1) by providing a layer (3) of an amphoteric dopant on the surface of the crystal and providing in that layer, at the desired location of the ohmic contact, a localised quantity of atoms of the element of the crystal which is capable of imparting with the amphoteric dopant the aforesaid extrinsic conductivity type, and heating the structure to diffuse atoms from the layer into the surface of the crystal to form the ohmic contact. A layer of Si on GaAs upon heating normally forms a rectifying contact. If a region of the Si layer contains As atoms, an ohmic contact is formed on heating.

公开(公告)号：DE3166902D1

公开(公告)日：1984-12-06

申请号：DE3166902

申请日：1981-03-31

Applicant: IBM

Inventor： HODGSON RODNEY TREVOR ,  PETTIT GEORGE DAVID ,  SEDGWICK THOMAS OLIVER ,  WOODALL JERRY MCPHERSON

IPC: H01L21/324 ,  H01L21/314 ,  H01L21/428 ,  H01L23/29 ,  H01L23/31 ,  H01L23/28

Abstract: A group II-VI compound semiconductor (16) is used as a surface passivator to control recombination of charge carriers at the surface of a group III-V compound semiconductor (12, 14) by a localized heating step. Control of the recombination of the charge carriers is achieved by chemical reaction of the II-VI compound with excess group V element. In particular, a capping layer (16) of laser annealed ZnS is used for passivating a GaAs device (12, 14).

公开(公告)号：DE3480009D1

公开(公告)日：1989-11-09

申请号：DE3480009

申请日：1984-05-23

Applicant: IBM

Inventor： JACKSON THOMAS NELSON ,  KIRCHNER PETER DANIEL ,  PETTIT GEORGE DAVID ,  ROSENBERG JAMES JORDAN ,  WOODALL JERRY MACPHERSON ,  WRIGHT STEVEN LORENZ

IPC: C01B33/02 ,  C30B23/02 ,  C30B23/06 ,  C30B23/08 ,  C30B29/06 ,  H01L21/203

Abstract: A silicon source for molecular beam epitaxial deposition heated by electric current through the silicon is provided wherein the silicon is configured in a plurality of filaments positioned between two broader electrical contact areas. … The figures shows such a source comprising Z-shaped silicon filaments 15, 16, 17 integrated with an extending between electrical contact headers 18, 19. A current source is connected in series with the source and causes resistance heating of the source.

公开(公告)号：DE3166687D1

公开(公告)日：1984-11-22

申请号：DE3166687

申请日：1981-05-15

Applicant: IBM

Inventor： BRASLAU NORMAN ,  FREEHOUF JOHN LAWRENCE ,  PETTIT GEORGE DAVID ,  RUPPRECHT HANS STEPHAN ,  WOODALL JERRY MCPHERSON

IPC: H01L29/80 ,  H01L21/28 ,  H01L21/331 ,  H01L29/06 ,  H01L29/201 ,  H01L29/43 ,  H01L29/45 ,  H01L29/73 ,  H01L29/772 ,  H01L29/86 ,  H01L29/36 ,  H01L29/40

公开(公告)号：DE3786343T2

公开(公告)日：1994-01-20

申请号：DE3786343

申请日：1987-12-08

Applicant: IBM

Inventor： KIRCHNER PETER DANIEL ,  MARKS RONALD FRANKLIN ,  PETTIT GEORGE DAVID ,  WOODALL JERRY MAC PHERSON ,  WRIGHT STEVEN LORENZ

IPC: H01L31/0248 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/08 ,  H01L31/10 ,  H01L33/44 ,  H01S5/00 ,  H01L21/203

Abstract: An environmental interface for a semiconductor electro-optical conversion device layer that is optically transparent, electrically conductive and chemically passivating, made of an elemental semiconductor with an indirect band gap I> 1 electron volt in a layer between 2 and 20 nm thick. A GaAs (2) covered by GaAlAs converter with a 10 nm Si layer (6) over the GaAlAs (4) is illustrated.

公开(公告)号：DE3786343D1

公开(公告)日：1993-07-29

申请号：DE3786343

申请日：1987-12-08

Applicant: IBM

Inventor： KIRCHNER PETER DANIEL ,  MARKS RONALD FRANKLIN ,  PETTIT GEORGE DAVID ,  WOODALL JERRY MAC PHERSON ,  WRIGHT STEVEN LORENZ

IPC: H01L31/0248 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/08 ,  H01L31/10 ,  H01L33/44 ,  H01S5/00 ,  H01L21/203

Abstract: An environmental interface for a semiconductor electro-optical conversion device layer that is optically transparent, electrically conductive and chemically passivating, made of an elemental semiconductor with an indirect band gap I> 1 electron volt in a layer between 2 and 20 nm thick. A GaAs (2) covered by GaAlAs converter with a 10 nm Si layer (6) over the GaAlAs (4) is illustrated.