3.
    发明专利
    未知

    公开(公告)号:DE3687425T2

    公开(公告)日:1993-07-15

    申请号:DE3687425

    申请日:1986-04-16

    Applicant: IBM

    Abstract: The composition and doping profile of the emitter (4) produces an electron gas (16) in the base (3) adjacent a band offset heterojunction interface between the emitter and the base. When a suitable bias is applied, the electron gas is confined adjacent to the interface by a low barrier (produced by layer 10). The kinetic energy of ballistic electrons crossing the base to the collector (2) is controlled to prevent intervalley scattering by an electrostatic barrier (7) that under influence of bias provides an essentially level conduction band in the portion of the base adjacent the collector.

    Techniques for grid coupling photovoltaic cells using ratiometric voltage conversion

    公开(公告)号:GB2514036A

    公开(公告)日:2014-11-12

    申请号:GB201413830

    申请日:2013-01-30

    Applicant: IBM

    Abstract: Techniques for electrical power transfer in photovoltaic systems are provided. In one aspect, a photovoltaic system includes an array of photovoltaic power producing elements (e.g., concentrator photovoltaic cells); a power receiving unit; and at least one ratiometric DC to DC converter connected to both the array of photovoltaic power producing elements and the power receiving unit. The array of photovoltaic power producing elements can include a plurality of the photovoltaic power producing elements connected in series or in parallel. In another aspect, a method of transferring electrical power from an array of photovoltaic power producing elements to a power receiving unit includes the following step. At least one ratiometric DC to DC converter is connected to both the array of photovoltaic power producing elements and the power receiving unit. The at least one ratiometric DC to DC converter is configured to alter a voltage output from the array.

    7.
    发明专利
    未知

    公开(公告)号:DE3685842T2

    公开(公告)日:1993-02-04

    申请号:DE3685842

    申请日:1986-04-11

    Applicant: IBM

    Abstract: An ohmic contact is formed to a device region in the surface of an extrinsic conductivity type group III-V semiconductor crystal (1) by providing a layer (3) of an amphoteric dopant on the surface of the crystal and providing in that layer, at the desired location of the ohmic contact, a localised quantity of atoms of the element of the crystal which is capable of imparting with the amphoteric dopant the aforesaid extrinsic conductivity type, and heating the structure to diffuse atoms from the layer into the surface of the crystal to form the ohmic contact. A layer of Si on GaAs upon heating normally forms a rectifying contact. If a region of the Si layer contains As atoms, an ohmic contact is formed on heating.

    Techniken zur Netzkopplung von Solarzellen mit ratiometrischer Spannungsumwandlung

    公开(公告)号:DE112013000480T5

    公开(公告)日:2014-09-18

    申请号:DE112013000480

    申请日:2013-01-30

    Applicant: IBM

    Abstract: Es werden Techniken zur elektrischen Stromübertragung in photovoltaischen Systemen bereitgestellt. In einem Aspekt umfasst ein photovoltaisches System ein Array Solarstrom erzeugender Elemente (z. B. konzentrierende Solarzellen); eine stromempfangende Einheit; und mindestens einen ratiometrischen Gleichstromwandler, der sowohl mit dem Array Solarstrom erzeugender Elemente als auch mit der stromempfangenden Einheit verbunden ist. Das Array Solarstrom erzeugender Elemente kann eine Vielzahl der Solarstrom erzeugenden Elemente aufweisen, die in Reihe oder parallel geschaltet sind. In einem anderen Aspekt schließt ein Verfahren zur Übertragung von elektrischem Strom aus einem Array Solarstrom erzeugender Elemente zu einer stromempfangenden Einheit den folgenden Schritt ein. Mindestens ein ratiometrischer Gleichstromwandler wird sowohl mit dem Array Solarstrom erzeugender Elemente als auch mit der stromempfangenden Einheit verbunden. Der mindestens eine ratiometrische Gleichstromwandler ist so konfiguriert, dass er eine Spannungsabgabe aus dem Array ändert.

    10.
    发明专利
    未知

    公开(公告)号:DE3687425D1

    公开(公告)日:1993-02-18

    申请号:DE3687425

    申请日:1986-04-16

    Applicant: IBM

    Abstract: The composition and doping profile of the emitter (4) produces an electron gas (16) in the base (3) adjacent a band offset heterojunction interface between the emitter and the base. When a suitable bias is applied, the electron gas is confined adjacent to the interface by a low barrier (produced by layer 10). The kinetic energy of ballistic electrons crossing the base to the collector (2) is controlled to prevent intervalley scattering by an electrostatic barrier (7) that under influence of bias provides an essentially level conduction band in the portion of the base adjacent the collector.

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