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公开(公告)号:JPS61248470A
公开(公告)日:1986-11-05
申请号:JP445586
申请日:1986-01-14
Applicant: IBM
Inventor: JACKSON THOMAS NELSON , KIRCHNER PETER DANIEL , PETTIT GEORGE DAVID , RUTZ RICHARD FREDERICK , WOODALL JERRY MACPHERSON
IPC: H01L21/338 , H01L21/28 , H01L21/285 , H01L29/41 , H01L29/43 , H01L29/45 , H01L29/80 , H01L29/812
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公开(公告)号:JPS61248561A
公开(公告)日:1986-11-05
申请号:JP663786
申请日:1986-01-17
Applicant: IBM
Inventor: FREEOUF JOHN LAWRENCE , JACKSON THOMAS NELSON , KIRCHNER PETER DANIEL , TANG JEFFREY YUH-FONG , WOODALL JERRY MACPHERSON
IPC: H01L29/73 , H01L21/331 , H01L29/68 , H01L29/737 , H01L29/76
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公开(公告)号:DE3687425T2
公开(公告)日:1993-07-15
申请号:DE3687425
申请日:1986-04-16
Applicant: IBM
Inventor: FREEOUF JOHN LAWRENCE , JACKSON THOMAS NELSON , KIRCHNER PETER DANIEL , TANG JEFFREY YUH-FONG , WOODALL JERRY MACPHERSON
IPC: H01L29/73 , H01L21/331 , H01L29/68 , H01L29/737 , H01L29/76
Abstract: The composition and doping profile of the emitter (4) produces an electron gas (16) in the base (3) adjacent a band offset heterojunction interface between the emitter and the base. When a suitable bias is applied, the electron gas is confined adjacent to the interface by a low barrier (produced by layer 10). The kinetic energy of ballistic electrons crossing the base to the collector (2) is controlled to prevent intervalley scattering by an electrostatic barrier (7) that under influence of bias provides an essentially level conduction band in the portion of the base adjacent the collector.
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公开(公告)号:DE69617584D1
公开(公告)日:2002-01-17
申请号:DE69617584
申请日:1996-09-09
Applicant: IBM
Inventor: BORREL PAUL , KIRCHNER PETER DANIEL , MENON JAI PRAKASH
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公开(公告)号:DE3480009D1
公开(公告)日:1989-11-09
申请号:DE3480009
申请日:1984-05-23
Applicant: IBM
Inventor: JACKSON THOMAS NELSON , KIRCHNER PETER DANIEL , PETTIT GEORGE DAVID , ROSENBERG JAMES JORDAN , WOODALL JERRY MACPHERSON , WRIGHT STEVEN LORENZ
Abstract: A silicon source for molecular beam epitaxial deposition heated by electric current through the silicon is provided wherein the silicon is configured in a plurality of filaments positioned between two broader electrical contact areas. … The figures shows such a source comprising Z-shaped silicon filaments 15, 16, 17 integrated with an extending between electrical contact headers 18, 19. A current source is connected in series with the source and causes resistance heating of the source.
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公开(公告)号:GB2514036A
公开(公告)日:2014-11-12
申请号:GB201413830
申请日:2013-01-30
Applicant: IBM
Inventor: KIRCHNER PETER DANIEL , MANZER DENNIS G , MARTIN YVES C , PICUNKO THOMAS , SANDSTROM ROBERT L , KESSEL THEODORE GERARD VAN
IPC: H02J3/38
Abstract: Techniques for electrical power transfer in photovoltaic systems are provided. In one aspect, a photovoltaic system includes an array of photovoltaic power producing elements (e.g., concentrator photovoltaic cells); a power receiving unit; and at least one ratiometric DC to DC converter connected to both the array of photovoltaic power producing elements and the power receiving unit. The array of photovoltaic power producing elements can include a plurality of the photovoltaic power producing elements connected in series or in parallel. In another aspect, a method of transferring electrical power from an array of photovoltaic power producing elements to a power receiving unit includes the following step. At least one ratiometric DC to DC converter is connected to both the array of photovoltaic power producing elements and the power receiving unit. The at least one ratiometric DC to DC converter is configured to alter a voltage output from the array.
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公开(公告)号:DE3685842T2
公开(公告)日:1993-02-04
申请号:DE3685842
申请日:1986-04-11
Applicant: IBM
Inventor: JACKSON THOMAS NELSON , KIRCHNER PETER DANIEL , PETTIT GEORGE DAVID , RUTZ RICHARD FREDERICK , WOODALL JERRY MACPHERSON
IPC: H01L21/338 , H01L21/28 , H01L21/285 , H01L29/41 , H01L29/43 , H01L29/45 , H01L29/80 , H01L29/812
Abstract: An ohmic contact is formed to a device region in the surface of an extrinsic conductivity type group III-V semiconductor crystal (1) by providing a layer (3) of an amphoteric dopant on the surface of the crystal and providing in that layer, at the desired location of the ohmic contact, a localised quantity of atoms of the element of the crystal which is capable of imparting with the amphoteric dopant the aforesaid extrinsic conductivity type, and heating the structure to diffuse atoms from the layer into the surface of the crystal to form the ohmic contact. A layer of Si on GaAs upon heating normally forms a rectifying contact. If a region of the Si layer contains As atoms, an ohmic contact is formed on heating.
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公开(公告)号:DE112013000480T5
公开(公告)日:2014-09-18
申请号:DE112013000480
申请日:2013-01-30
Applicant: IBM
Inventor: KIRCHNER PETER DANIEL , MANZER DENNIS G , MARTIN YVES C , PICUNKO THOMAS , SANDSTROM ROBERT L , VAN KESSEL THEODORE GERARD
Abstract: Es werden Techniken zur elektrischen Stromübertragung in photovoltaischen Systemen bereitgestellt. In einem Aspekt umfasst ein photovoltaisches System ein Array Solarstrom erzeugender Elemente (z. B. konzentrierende Solarzellen); eine stromempfangende Einheit; und mindestens einen ratiometrischen Gleichstromwandler, der sowohl mit dem Array Solarstrom erzeugender Elemente als auch mit der stromempfangenden Einheit verbunden ist. Das Array Solarstrom erzeugender Elemente kann eine Vielzahl der Solarstrom erzeugenden Elemente aufweisen, die in Reihe oder parallel geschaltet sind. In einem anderen Aspekt schließt ein Verfahren zur Übertragung von elektrischem Strom aus einem Array Solarstrom erzeugender Elemente zu einer stromempfangenden Einheit den folgenden Schritt ein. Mindestens ein ratiometrischer Gleichstromwandler wird sowohl mit dem Array Solarstrom erzeugender Elemente als auch mit der stromempfangenden Einheit verbunden. Der mindestens eine ratiometrische Gleichstromwandler ist so konfiguriert, dass er eine Spannungsabgabe aus dem Array ändert.
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公开(公告)号:DE69617584T2
公开(公告)日:2002-08-22
申请号:DE69617584
申请日:1996-09-09
Applicant: IBM
Inventor: BORREL PAUL , KIRCHNER PETER DANIEL , MENON JAI PRAKASH
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公开(公告)号:DE3687425D1
公开(公告)日:1993-02-18
申请号:DE3687425
申请日:1986-04-16
Applicant: IBM
Inventor: FREEOUF JOHN LAWRENCE , JACKSON THOMAS NELSON , KIRCHNER PETER DANIEL , TANG JEFFREY YUH-FONG , WOODALL JERRY MACPHERSON
IPC: H01L29/73 , H01L21/331 , H01L29/68 , H01L29/737 , H01L29/76
Abstract: The composition and doping profile of the emitter (4) produces an electron gas (16) in the base (3) adjacent a band offset heterojunction interface between the emitter and the base. When a suitable bias is applied, the electron gas is confined adjacent to the interface by a low barrier (produced by layer 10). The kinetic energy of ballistic electrons crossing the base to the collector (2) is controlled to prevent intervalley scattering by an electrostatic barrier (7) that under influence of bias provides an essentially level conduction band in the portion of the base adjacent the collector.
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