INTEGRATED CIRCUIT DEVICE AND ITS MANUFACTURE

    公开(公告)号:JPH10135200A

    公开(公告)日:1998-05-22

    申请号:JP25820497

    申请日:1997-09-24

    Applicant: IBM

    Abstract: PROBLEM TO BE SOLVED: To obtain an integrated circuit having a low dielectric constant by forming a dielectric material, composed of a resulted product of a reaction between organic polysilica and a precursor polymer selected out among uncylized polybenzooxazole, polybenzothiazole, and polybenzoimidazole adjacently to metallic circuit wiring for interconnection on a substrate. SOLUTION: The mechanical characteristic, polishability, anisotropy, optical characteristic, and dielectric characteristic of an integrated circuit device are improved and, at the same time, a mechanical characteristic that can withstand cracking is given to the device and the device is chemically and mechanically flattened by providing metallic circuit wiring 4 and a dielectric material 6 on a substrate 2 and vertical metallic studs 8 in the substrate 2 and constituting the material 6 which is put on or between the wiring 4 of the resultant product of a reaction between organic polysilica and a precursor polymer selected from among linear uncyclized polybenzooxazole, polybensothiazole, and polybenzoimidazole.

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