INTEGRATED CIRCUIT DEVICE AND ITS MANUFACTURE

    公开(公告)号:JPH10135200A

    公开(公告)日:1998-05-22

    申请号:JP25820497

    申请日:1997-09-24

    Applicant: IBM

    Abstract: PROBLEM TO BE SOLVED: To obtain an integrated circuit having a low dielectric constant by forming a dielectric material, composed of a resulted product of a reaction between organic polysilica and a precursor polymer selected out among uncylized polybenzooxazole, polybenzothiazole, and polybenzoimidazole adjacently to metallic circuit wiring for interconnection on a substrate. SOLUTION: The mechanical characteristic, polishability, anisotropy, optical characteristic, and dielectric characteristic of an integrated circuit device are improved and, at the same time, a mechanical characteristic that can withstand cracking is given to the device and the device is chemically and mechanically flattened by providing metallic circuit wiring 4 and a dielectric material 6 on a substrate 2 and vertical metallic studs 8 in the substrate 2 and constituting the material 6 which is put on or between the wiring 4 of the resultant product of a reaction between organic polysilica and a precursor polymer selected from among linear uncyclized polybenzooxazole, polybensothiazole, and polybenzoimidazole.

    Reworkable thermoplastic encapsulating material
    2.
    发明专利
    Reworkable thermoplastic encapsulating material 有权
    可重复使用的热塑性防护材料

    公开(公告)号:JPH11274376A

    公开(公告)日:1999-10-08

    申请号:JP36146698

    申请日:1998-12-18

    Abstract: PROBLEM TO BE SOLVED: To make an encapsulating material reworkable for permitting respective devices to be repaired and replaced under the environment of integrated circuit assembly, by making the encapsulating material contain a thermoplastic polymer, which is formed adjacent to solder bonding and composed of ring- opening polymerization of ring oligomer.
    SOLUTION: An ring oligomer in an encapsulating material forms a thermally stable polymer, which is properly formed upon application at a region applied by ring-opening polymerization. Therefore, the encapsulating material can be simply melted adjacent to a chip from a hotmelt and can be flowed into an assembly by capillary action. The encapsulating material can be reworked by simply concentrating heat on a specific device, heating the thermoplastic polymer to a temperature above its melting temperature Tg and by melting solder. Then, the chip can be removed from a board. The normal reworking temperature is within a range of approximately 250-400°C.
    COPYRIGHT: (C)1999,JPO

    Abstract translation: 要解决的问题:为了使封装材料可再加工以允许在集成电路组件的环境下修复和更换相应的器件,通过使封装材料包含邻近焊接接合形成的热塑性聚合物, 环低聚物的开环聚合。 解决方案:封装材料中的环状低聚物形成热稳定的聚合物,其在通过开环聚合应用的区域适当形成。 因此,封装材料可以从热熔体中简单地熔融到芯片附近,并且可以通过毛细管作用流入组件。 可以通过简单地将热量集中在特定装置上,将热塑性聚合物加热至高于其熔融温度Tg的温度并通过熔化焊料来重新加工封装材料。 然后,可以从电路板上取下芯片。 正常的返工温度在约250-400摄氏度的范围内。

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