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公开(公告)号:JPH10135200A
公开(公告)日:1998-05-22
申请号:JP25820497
申请日:1997-09-24
Applicant: IBM
Inventor: KENETH RAYMOND CARTER , JAMES LUPTON HEDRICK , ROBERT DENNIS MILLER
IPC: C08G77/452 , C08L83/10 , H01L21/312 , H01L21/314 , H01L21/768 , H01L23/522
Abstract: PROBLEM TO BE SOLVED: To obtain an integrated circuit having a low dielectric constant by forming a dielectric material, composed of a resulted product of a reaction between organic polysilica and a precursor polymer selected out among uncylized polybenzooxazole, polybenzothiazole, and polybenzoimidazole adjacently to metallic circuit wiring for interconnection on a substrate. SOLUTION: The mechanical characteristic, polishability, anisotropy, optical characteristic, and dielectric characteristic of an integrated circuit device are improved and, at the same time, a mechanical characteristic that can withstand cracking is given to the device and the device is chemically and mechanically flattened by providing metallic circuit wiring 4 and a dielectric material 6 on a substrate 2 and vertical metallic studs 8 in the substrate 2 and constituting the material 6 which is put on or between the wiring 4 of the resultant product of a reaction between organic polysilica and a precursor polymer selected from among linear uncyclized polybenzooxazole, polybensothiazole, and polybenzoimidazole.
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公开(公告)号:JPH11274376A
公开(公告)日:1999-10-08
申请号:JP36146698
申请日:1998-12-18
Inventor: KENETH RAYMOND CARTER , CRAIG JOHN HOKER , JAMES LUPTON HEDRICK , ROBERT DENNIS MILLER , GAYNES MICHAEL ANTHONY , BUCHWALTER STEPHEN LESLIE
CPC classification number: H01L21/563 , H01L23/293 , H01L2224/16225 , H01L2224/73203 , H01L2924/00014 , H01L2924/01019 , H01L2924/09701 , H01L2224/0401
Abstract: PROBLEM TO BE SOLVED: To make an encapsulating material reworkable for permitting respective devices to be repaired and replaced under the environment of integrated circuit assembly, by making the encapsulating material contain a thermoplastic polymer, which is formed adjacent to solder bonding and composed of ring- opening polymerization of ring oligomer.
SOLUTION: An ring oligomer in an encapsulating material forms a thermally stable polymer, which is properly formed upon application at a region applied by ring-opening polymerization. Therefore, the encapsulating material can be simply melted adjacent to a chip from a hotmelt and can be flowed into an assembly by capillary action. The encapsulating material can be reworked by simply concentrating heat on a specific device, heating the thermoplastic polymer to a temperature above its melting temperature Tg and by melting solder. Then, the chip can be removed from a board. The normal reworking temperature is within a range of approximately 250-400°C.
COPYRIGHT: (C)1999,JPOAbstract translation: 要解决的问题:为了使封装材料可再加工以允许在集成电路组件的环境下修复和更换相应的器件,通过使封装材料包含邻近焊接接合形成的热塑性聚合物, 环低聚物的开环聚合。 解决方案:封装材料中的环状低聚物形成热稳定的聚合物,其在通过开环聚合应用的区域适当形成。 因此,封装材料可以从热熔体中简单地熔融到芯片附近,并且可以通过毛细管作用流入组件。 可以通过简单地将热量集中在特定装置上,将热塑性聚合物加热至高于其熔融温度Tg的温度并通过熔化焊料来重新加工封装材料。 然后,可以从电路板上取下芯片。 正常的返工温度在约250-400摄氏度的范围内。
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公开(公告)号:JPH10135202A
公开(公告)日:1998-05-22
申请号:JP28164197
申请日:1997-10-15
Applicant: IBM
Inventor: BROWN HUGH RALPH , KENETH RAYMOND CARTER , CHA HYUK-JIN , DIPIETRO RICHARD ANTHONY , JAMES LUPTON HEDRICK , HUMMEL JOHN PATRICK , ROBERT DENNIS MILLER , YOON DO YEUNG
IPC: C08G77/455 , C08G73/10 , C09D183/10 , H01L21/316 , H01L21/768 , H01L23/498 , H01L23/522
Abstract: PROBLEM TO BE SOLVED: To reduce required drive current and power consumption for the device, by laying interconnecting metal circuit lines on a substrate and disposing a specified dielectric material adjacent to the circuit lines. SOLUTION: The device comprises a substrate 2, meal circuit lines 4' and a dielectric material 6. The substrate 2 has vertical studs 8 formed therein. The dielectric material 6 in an org. polysilica, pref. a reaction product with polyaminate, having a terminal group (RO)m (R'')n SiR'-; m=1, 2 or 3, m+n=3, R and R' are hydrocarbyl group, R'' is hydride or hydrocarbyl group. The terminal group is a mono-, di- or tri-C1-C10 alkoxysilyl C1-10 alkyl or aryl group. This lowers the dielectric const. of the inserted dielectric material to allow the circuit line spacing to be reduced, without increasing the crosstalk or capacitive coupling, and also reduces the drive current and power consumption.
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