公开(公告)号：JPH11274376A

公开(公告)日：1999-10-08

申请号：JP36146698

申请日：1998-12-18

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレイション

Inventor： KENETH RAYMOND CARTER ,  CRAIG JOHN HOKER ,  JAMES LUPTON HEDRICK ,  ROBERT DENNIS MILLER ,  GAYNES MICHAEL ANTHONY ,  BUCHWALTER STEPHEN LESLIE

IPC: H01L21/56 ,  H01L23/29 ,  H01L23/31

CPC classification number: H01L21/563 ,  H01L23/293 ,  H01L2224/16225 ,  H01L2224/73203 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/09701 ,  H01L2224/0401

Abstract: PROBLEM TO BE SOLVED: To make an encapsulating material reworkable for permitting respective devices to be repaired and replaced under the environment of integrated circuit assembly, by making the encapsulating material contain a thermoplastic polymer, which is formed adjacent to solder bonding and composed of ring- opening polymerization of ring oligomer.
SOLUTION: An ring oligomer in an encapsulating material forms a thermally stable polymer, which is properly formed upon application at a region applied by ring-opening polymerization. Therefore, the encapsulating material can be simply melted adjacent to a chip from a hotmelt and can be flowed into an assembly by capillary action. The encapsulating material can be reworked by simply concentrating heat on a specific device, heating the thermoplastic polymer to a temperature above its melting temperature Tg and by melting solder. Then, the chip can be removed from a board. The normal reworking temperature is within a range of approximately 250-400°C.
COPYRIGHT: (C)1999,JPO

Abstract translation: 要解决的问题：为了使封装材料可再加工以允许在集成电路组件的环境下修复和更换相应的器件，通过使封装材料包含邻近焊接接合形成的热塑性聚合物， 环低聚物的开环聚合。 解决方案：封装材料中的环状低聚物形成热稳定的聚合物，其在通过开环聚合应用的区域适当形成。 因此，封装材料可以从热熔体中简单地熔融到芯片附近，并且可以通过毛细管作用流入组件。 可以通过简单地将热量集中在特定装置上，将热塑性聚合物加热至高于其熔融温度Tg的温度并通过熔化焊料来重新加工封装材料。 然后，可以从电路板上取下芯片。 正常的返工温度在约250-400摄氏度的范围内。

公开(公告)号：JPH10135202A

公开(公告)日：1998-05-22

申请号：JP28164197

申请日：1997-10-15

Applicant: IBM

Inventor： BROWN HUGH RALPH ,  KENETH RAYMOND CARTER ,  CHA HYUK-JIN ,  DIPIETRO RICHARD ANTHONY ,  JAMES LUPTON HEDRICK ,  HUMMEL JOHN PATRICK ,  ROBERT DENNIS MILLER ,  YOON DO YEUNG

IPC: C08G77/455 ,  C08G73/10 ,  C09D183/10 ,  H01L21/316 ,  H01L21/768 ,  H01L23/498 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To reduce required drive current and power consumption for the device, by laying interconnecting metal circuit lines on a substrate and disposing a specified dielectric material adjacent to the circuit lines. SOLUTION: The device comprises a substrate 2, meal circuit lines 4' and a dielectric material 6. The substrate 2 has vertical studs 8 formed therein. The dielectric material 6 in an org. polysilica, pref. a reaction product with polyaminate, having a terminal group (RO)m (R'')n SiR'-; m=1, 2 or 3, m+n=3, R and R' are hydrocarbyl group, R'' is hydride or hydrocarbyl group. The terminal group is a mono-, di- or tri-C1-C10 alkoxysilyl C1-10 alkyl or aryl group. This lowers the dielectric const. of the inserted dielectric material to allow the circuit line spacing to be reduced, without increasing the crosstalk or capacitive coupling, and also reduces the drive current and power consumption.

公开(公告)号：JPH10135199A

公开(公告)日：1998-05-22

申请号：JP25816397

申请日：1997-09-24

Applicant: IBM

Inventor： JAMES LUPTON HEDRICK ,  ROBERT DENNIS MILLER ,  SATEIANARAYAN AYANGAA SURINIBA

IPC: C08G73/10 ,  H01L21/312 ,  H01L21/768 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To obtain an integrated circuit device having a low dielectric constant by forming a dielectric material containing hardened polyamic acid ester adjacently to metallic circuit wiring for interconnection on a substrate. SOLUTION: Metallic circuit wiring 4 and a dielectric material 6 are provided on the surface of a substrate 2 and vertical metallic studs 8 are provided in the substrate 2. The material 6 which is put on, around, and/or between the wiring 4 is constituted of imidized polyamic acid ester, containing (RO)m (R")n SiR' as an end group, where m, n, R and R', and R" respectively represent 1, 2, or 3, m+n=3, hydrocarbyl groups, and a hydride or hydrocarbyl group. This dielectric composition presents a low coefficient of thermal expansion of 1000×10 at a high temperature. Therefore, an integrated circuit element having a high mechanical characteristic, a high frictional characteristic, a highly uniform optical characteristics, and a high dielectric characteristic can be obtained, because the cracking of films can be avoided during succeeding heat treatment processes.

公开(公告)号：JPH1069982A

公开(公告)日：1998-03-10

申请号：JP16557197

申请日：1997-06-23

Applicant: IBM

Inventor： GORDON JOSEPH GROVER ,  SIEGFRIED FRIEDRICH KARUKU ,  JAMES HARVEY KAUFMAN ,  MARTIN KURAIENSHIYUMITSUTO ,  ROBERT DENNIS MILLER ,  JOHN CAMPBELL SCOTT

IPC: C09K11/06 ,  H01L51/50 ,  H05B33/10 ,  H05B33/12 ,  H05B33/14

Abstract: PROBLEM TO BE SOLVED: To obtain an improved electric field luminescent element by containing a luminescent composition including a charge carrier polymer, a negative ion, and a positive ion between first and second electrodes. SOLUTION: This luminescent element is located between a non-translucent electrode 4 and a translucent electrode 6 and contains a luminescent composition 2 into contact with these electrodes 4 and 6. This element is supported on a glass base 8, when a voltage is applied to the electrodes 4 and 6 light is emitted from a composition 2 and radiated from the element through the electrode 6 and the base 8. This composition 2 contains a charge carrier polymer and a salt including negative and positive ions. The positive and negative ions are fixed in a polymer matrix during manufacturing of the element, provided with non-uniform space distribution in the composition 2, and forms a constant density gradient at each electrode, however, a negative ion density is higher at the electrode 4, and a positive ion density is higher at the electrode 6. Since non- uniform distribution of ions in the polymer matrix is fixed, the element can emit light within 10 milliseconds after a voltage is applied to the electrodes 4 and 6.

公开(公告)号：JP2009120843A

公开(公告)日：2009-06-04

申请号：JP2008329614

申请日：2008-12-25

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： CRAIG JOHN HOKER ,  JAMES LUPTON HEDRICK ,  LEE VICTOR YEE-WAY ,  ROBERT DENNIS MILLER

IPC: C08J3/12 ,  C08J9/26 ,  C08J3/24 ,  C08J3/28 ,  C08J9/04 ,  H01L21/312 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/14 ,  H01L23/522

CPC classification number: H01L21/316 ,  C08J3/24 ,  H01L21/312

Abstract: PROBLEM TO BE SOLVED: To provide a porous dielectric material used in electronic devices such as integrated circuits. SOLUTION: Crosslinked particles are manufactured by activating crosslinkable groups in synthetic polymer molecules. The crosslinkable groups are inert until activated and, when activated, undergo an irreversible intramolecular crosslinking reaction to form crosslinked particles. Further, the crosslinked particles are intermolecularly deactivated to the polymer molecules under the crosslinking condition. The crosslinked particles are also intermolecularly deactivated each other under the crosslinking condition. The resultant crosslinked particles having the decomposition temperature lower than that of the host-matrix material is mixed with the host-matrix material, heated up to the decomposition temperature of the crosslinked particle to irreversibly decompose the particles into the porous dielectric material. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供用于诸如集成电路的电子设备中的多孔电介质材料。 解决方案：通过在合成聚合物分子中活化可交联基团来制备交联颗粒。 可交联基团是惰性的，直到活化，并且当被活化时，经历不可逆的分子内交联反应以形成交联颗粒。 此外，交联颗粒在交联条件下与聚合物分子分子失活。 交联颗粒在交联条件下也分子内失活。 将得到的分解温度低于主体 - 基体材料的交联颗粒与主体 - 基体材料混合，加热到交联颗粒的分解温度，以将颗粒不可逆地分解成多孔电介质材料。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008238816A

公开(公告)日：2008-10-09

申请号：JP2008053338

申请日：2008-03-04

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： CHENG JOY ,  ROBERT DENNIS MILLER ,  KIM HO-CHEOL

IPC: B32B3/30

CPC classification number: B29D22/00 ,  B33Y10/00 ,  B33Y80/00 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y30/00 ,  C08L53/00 ,  G03F7/0002 ,  Y10S977/70 ,  Y10S977/701 ,  Y10S977/712 ,  Y10S977/788 ,  Y10S977/932 ,  Y10T428/1393 ,  Y10T428/24132 ,  Y10T428/249921 ,  C08L2666/02 ,  C08L2666/24

Abstract: PROBLEM TO BE SOLVED: To provide a method of positioning microdomains of a block copolymer on a substrate and the structure assembled of it. SOLUTION: The method includes a step to provide a first block copolymer and a step to provide a substrate 101 having a surface layer 105. The surface layer has at least one recess 102 integrally disposed thereon. The recess has sidewalls 103 and 104. The method includes a step to form a first film formed of the first block copolymer inside the recess, a step to form line-forming microdomains, a step to remove at least one microdomain from the first film, a step to form a second film containing a second block copolymer, a step to assemble line-forming microdomains with the second block copolymer and form second self-assembled structures within the second film oriented normal to the orientation structure and parallel to the sidewalls. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供将嵌段共聚物的微区定位在基材上的方法和由其组装的结构。 解决方案：该方法包括提供第一嵌段共聚物和提供具有表面层105的基材101的步骤。表面层具有一体地设置在其上的至少一个凹部102。 该凹槽具有侧壁103和104.该方法包括形成由凹槽内的第一嵌段共聚物形成的第一膜的步骤，形成线形成微区的步骤，从第一膜去除至少一个微区的步骤， 形成含有第二嵌段共聚物的第二膜的步骤，将线形成微区与第二嵌段共聚物组装的步骤，并在第二膜中形成第二自组装结构，该第二膜在垂直于取向结构并平行于侧壁取向。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2000150785A

公开(公告)日：2000-05-30

申请号：JP31468798

申请日：1998-11-05

Applicant: IBM

Inventor： KENNETH RAYMOND CARTER ,  ROBERT FRANCIS COOK ,  MARTHA ERIN HERBISON ,  CRAIG JOHN HAWKER ,  JAMES LUPTON HEDRICK ,  LEE VICTOR YEE-WAY ,  ERIK GERHARD RINIGER ,  ROBERT DENNIS MILLER ,  BILLY VOLKSEN ,  DOU IEN YOON

IPC: H01L27/04 ,  C09K3/16 ,  H01L21/31 ,  H01L21/312 ,  H01L21/822

Abstract: PROBLEM TO BE SOLVED: To improve mechanical toughness and polishing characteristics by allowing a dielectric composition for creating an integrated circuit to contain a methylsilsesquioxan and a photosensitive base or a heat-sensitive base product. SOLUTION: In a multilayer integrated circuit device, the lower layer of insulated flattening metal circuit lines 4 is allowed to function as a substrate 2, a perpendicular metal stud 8 is formed in the substrate 2, and at the same time a dielectric material 6 is buried between the flattening metal circuit lines 4 for formation. The dielectric material 6 contains tetraalkoxysilane and tetraethoxy silane, alkyl/trialkoxy, or trihalo silicate, or dialkyl/dialkoxy, or alkyl (methyl) phenylsilsesquioxan that is mixed with dihalo silicate, and a photosensitive base or a heat-sensitive base product.

公开(公告)号：JPH10135332A

公开(公告)日：1998-05-22

申请号：JP28044397

申请日：1997-10-14

Applicant: IBM

Inventor： CRAIG JOHN HAWKER ,  JAMES LUPTON HEDRICK ,  ROBERT DENNIS MILLER

IPC: H01L21/3205 ,  H01L21/312 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: PROBLEM TO BE SOLVED: To make the arranging interval of metallic circuit wiring narrower without increasing cross talk nor capacity coupling, by reducing the dielectric constant of a dielectric material by arranging a dielectric composition containing the resulted product of the reaction between a multi-branched high polymer and an organic polysilica adjacently to the circuit wiring on a substrate. SOLUTION: A dielectric composition 6 containing the resulted product of the reaction between a multi-branched high polymer and an organic polysilica is arranged adjacently to metallic circuit wiring 4 laid on a substrate 2. A suitable multi-branched high polymer includes multi-branched poly(allyl ether phenyl quinoxaline), poly(ether quinoline), poly(allyl ester), poly(ether ketone), etc. In addition, a suitable polysilica includes such silsesquioxane as the phenyl/ C1-6 alykylsilsesquioxane, etc. For example, the dielectric material 6 containing the reaction product is disposed between the metallic circuit wiring 4 laid on the substrate 2 having vertical studs 8.

公开(公告)号：JP2005330495A

公开(公告)日：2005-12-02

申请号：JP2005215082

申请日：2005-07-25

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： CRAIG JOHN HOKER ,  JAMES LUPTON HEDRICK ,  LEE VICTOR YEE-WAY ,  ROBERT DENNIS MILLER

IPC: C08J3/12 ,  C08J3/24 ,  C08J3/28 ,  C08J9/04 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L21/316 ,  C08J3/24 ,  H01L21/312

Abstract: PROBLEM TO BE SOLVED: To provide a porous dielectric material applicable to electronic devices such as integrated circuits. SOLUTION: Crosslinked particles are produced by activating the crosslinkable groups on synthetic polymer. The crosslinkable groups are inert until activated and, when activated, undergo an irreversible intramolecular crosslinking reaction to form crosslinked particles. And the crosslinked particles are inert to the polymer molecules in intermolecular crosslinking under crosslinking conditions, and are inert to each other in intermolecular crosslinking under crosslinking conditions. The thus obtained crosslinked particles having a lower decomposition temperature than that of the host matrix material are mixed with the host matrix material, and the compound is heated to the decomposition temperature of the crosslinked particles to decompose the crosslinked particles so as to produce the porous dielectric material. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供可应用于诸如集成电路的电子器件的多孔电介质材料。 解决方案：通过活化合成聚合物上的可交联基团来制备交联颗粒。 可交联基团是惰性的，直到活化，并且当被活化时，经历不可逆的分子内交联反应以形成交联颗粒。 并且交联颗粒在交联条件下在分子间交联中对聚合物分子是惰性的，并且在交联条件下在分子间交联中彼此是惰性的。 将如此获得的具有比主体基质材料低的分解温度的交联颗粒与主体基质材料混合，并将化合物加热至交联颗粒的分解温度以分解交联颗粒，从而产生多孔介电 材料。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2003313305A

公开(公告)日：2003-11-06

申请号：JP2003052870

申请日：2003-02-28

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーション

Inventor： CRAIG JOHN HOKER ,  JAMES LUPTON HEDRICK ,  LEE VICTOR YEE-WAY ,  ROBERT DENNIS MILLER

IPC: C08J3/12 ,  C08J3/24 ,  C08J3/28 ,  C08J9/04 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L21/316 ,  C08J3/24 ,  H01L21/312

Abstract: PROBLEM TO BE SOLVED: To obtain a crosslinked particle useful for manufacturing a dielectric material used for an electronic device such as an integrated circuit. SOLUTION: The crosslinked particle is manufactured by activating a crosslinkable group in a synthetic polymer. The crosslinkable group remains inactive until it is activated and, when activated, an intramolecular crosslinking reaction occurs irreversibly and the crosslinked particle is formed. In terms of intermolecular crosslinking, the crosslinked particle is kept inactive with each other and against the polymer molecule under the crosslinking condition. COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：获得用于制造用于诸如集成电路的电子器件的电介质材料的交联颗粒。 解决方案：通过活化合成聚合物中的可交联基团制备交联颗粒。 可交联基团保持无活性，直到其被活化，并且当被激活时，分子内交联反应不可逆地发生并且形成交联颗粒。 在分子间交联方面，交联颗粒在交联条件下彼此保持无活性并相对于聚合物分子。 版权所有（C）2004，JPO