公开(公告)号：DE3667498D1

公开(公告)日：1990-01-18

申请号：DE3667498

申请日：1986-01-07

Applicant: IBM

Inventor： HO PAUL SIU-CHUNG ,  HAHN PETER OTTO ,  LEFAKIS HARRY ,  RUBLOFF GARY WAYNE

IPC: C23C14/02 ,  C23C14/20 ,  C23C14/58 ,  H01L21/48 ,  H01L23/14 ,  H05K3/14 ,  H05K3/16 ,  H05K3/38

公开(公告)号：DE3573320D1

公开(公告)日：1989-11-02

申请号：DE3573320

申请日：1985-10-04

Applicant: IBM

Inventor： BEHA JOHANNES GEORG ,  DREYFUS RUSSELL WARREN ,  RUBLOFF GARY WAYNE

IPC: G01R31/302 ,  G01R31/308 ,  H01L21/66 ,  G01R31/28

Abstract: Testing of integrated circuit process intermediates, such as wafers, dice or chips in various stages of production (test chip) is facilitated by a nonintrusive, noncontact dynamic testing technique, using a pulsed laser 7, with laser light modification 8 to increase photon energy through conversion to shorter wavelength. The high energy laser light excites electron emissions to pass to the detection system 13, 14 as a composite function of applied light energy and of dynamic operation of the circuit; detecting those emissions by an adjacent detector requires no ohmic contacts or special circuitry on the integrated circuit chip or wafer. Photoelectron energy 10 emitted from a test pad 3 on the test chip 1 is detected as a composite function of the instantaneous input voltage as processed on the test chip, in dynamic operation including improper operation due to fault. The pulse from the 'laser, as modified through light modification, the parameters of detection of bias voltages, and the distances involved in chip-grid-detector juxtaposition, provides emissions for detection of circuit voltages occuring on the test chip under dynamic conditions simulating actual or stressed operation, with high time resolution of the voltages and their changes on the circuit.