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公开(公告)号：US3914655A
公开(公告)日：1975-10-21
申请号：US37445773
申请日：1973-06-28
Applicant: IBM
Inventor： DREYFUS RUSSELL WARREN , HODGSON RODNEY TREVOR
Abstract: A high brightness ion beam is obtainable by using lasers to excite atoms or molecules from the ground state to an ionized state in increments, rather than in one step. The spectroscopic resonances of the atom or molecule are used so that relatively long wavelength, low power lasers can be used to obtain such ion beam.
Abstract translation: 通过使用激光器将原子或分子以增量的方式而不是在一个步骤中从基态激发到电离状态，可以获得高亮度离子束。 使用原子或分子的光谱共振，使得可以使用相对较长波长的低功率激光器来获得这样的离子束。
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公开(公告)号：DE2619104A1
公开(公告)日：1976-12-09
申请号：DE2619104
申请日：1976-05-03
Applicant: IBM
Inventor： DREYFUS RUSSELL WARREN , GUTFELD ROBERT JAKOB VON
Abstract: Contactless printer with an electrostatic printing head and a writing electrode is characterised by an arrangement to produce a constant corona discharge for the ionising of a gas. These ions are fed into the space between a writing electrode (14) and the paper carrier (16) in order to reduce the voltage required to effect a flow from the writing electrode to the paper. The writing electrodes are selectively controlled with writing impulse whose amplitude is at least that of the transfer voltage. The physical properties of the paper used change in dependence with the transfer of the writing flow.
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公开(公告)号：DE3167275D1
公开(公告)日：1985-01-03
申请号：DE3167275
申请日：1981-04-10
Applicant: IBM
Inventor： CUOMO JEROME JOHN , DREYFUS RUSSELL WARREN , WOODALL JERRY MCPHERSON
Abstract: A high brightness, essentially monoenergetic electron source is constructed in solid state material by providing a semiconductor body with an electron confinement barrier over most of the surface, the barrier having a relatively small opening exposing the semiconductor body, in the relatively small opening a material is placed in contact with the semiconductor body that has a work function that is lower than the energy of excited electrons in the semiconductor. In this structure electrons from hole-electron pairs generated in the semiconductor are repelled and recombination is inhibited by the barrier except in the relatively small opening where they are injected into the surrounding environment through the lower work function material. The hole-electron pair generation may be by irradiation or by electrical injection. The electron source is useful for such applications as high brightness sources, digital communications, cathode ray tube electron sources and scanning electron microscopes.
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公开(公告)号：DE3573320D1
公开(公告)日：1989-11-02
申请号：DE3573320
申请日：1985-10-04
Applicant: IBM
Inventor： BEHA JOHANNES GEORG , DREYFUS RUSSELL WARREN , RUBLOFF GARY WAYNE
IPC: G01R31/302 , G01R31/308 , H01L21/66 , G01R31/28
Abstract: Testing of integrated circuit process intermediates, such as wafers, dice or chips in various stages of production (test chip) is facilitated by a nonintrusive, noncontact dynamic testing technique, using a pulsed laser 7, with laser light modification 8 to increase photon energy through conversion to shorter wavelength. The high energy laser light excites electron emissions to pass to the detection system 13, 14 as a composite function of applied light energy and of dynamic operation of the circuit; detecting those emissions by an adjacent detector requires no ohmic contacts or special circuitry on the integrated circuit chip or wafer. Photoelectron energy 10 emitted from a test pad 3 on the test chip 1 is detected as a composite function of the instantaneous input voltage as processed on the test chip, in dynamic operation including improper operation due to fault. The pulse from the 'laser, as modified through light modification, the parameters of detection of bias voltages, and the distances involved in chip-grid-detector juxtaposition, provides emissions for detection of circuit voltages occuring on the test chip under dynamic conditions simulating actual or stressed operation, with high time resolution of the voltages and their changes on the circuit.
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Patent Agency Ranking
公开(公告)号：IT1151067B
公开(公告)日：1986-12-17
申请号：IT2260780
申请日：1980-06-06
Applicant: IBM
IPC: B23K28/00 , C08J7/00 , H01J3/04 , H01J27/02 , H01J27/20 , H01J37/08 , H01J49/14 , H01L21/265 , H01V
Abstract: The present invention describes an ion gun which is capable of producing relatively high density ion currents. The ion gun employs at least one capillary duct the surface of which is semiconducting and has secondary electron emission coefficient greater than one to generate ions from a source of an ionizable material and to accelerate the ions so generated.
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公开(公告)号：DE3669594D1
公开(公告)日：1990-04-19
申请号：DE3669594
申请日：1986-07-29
Applicant: IBM
IPC: H01L21/66 , G01R31/26 , G01R31/265 , G01R31/302 , G01R31/308 , G01R31/28
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公开(公告)号：IT8022607D0
公开(公告)日：1980-06-06
申请号：IT2260780
申请日：1980-06-06
Applicant: IBM
IPC: B23K28/00 , C08J7/00 , H01J3/04 , H01J27/02 , H01J27/20 , H01J37/08 , H01J49/14 , H01L21/265 , H01V
Abstract: The present invention describes an ion gun which is capable of producing relatively high density ion currents. The ion gun employs at least one capillary duct the surface of which is semiconducting and has secondary electron emission coefficient greater than one to generate ions from a source of an ionizable material and to accelerate the ions so generated.
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公开(公告)号：DE2425184A1
公开(公告)日：1975-01-16
申请号：DE2425184
申请日：1974-05-24
Applicant: IBM
Inventor： DREYFUS RUSSELL WARREN , HODGSON RODNEY TREVOR
Abstract: A high brightness ion beam is obtainable by using lasers to excite atoms or molecules from the ground state to an ionized state in increments, rather than in one step. The spectroscopic resonances of the atom or molecule are used so that relatively long wavelength, low power lasers can be used to obtain such ion beam.
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