公开(公告)号：DE10153497B4

公开(公告)日：2006-04-06

申请号：DE10153497

申请日：2001-10-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FERBITZ JENS ,  MORMANN WERNER ,  ROTTSTEGGE JOERG ,  HOHLE CHRISTOPH ,  ESCHBAUMER CHRISTIAN ,  SEBALD MICHAEL

IPC: G03F7/40

Abstract: Method for reinforcing a structured photoresist comprising a polymer having anchor groups comprises applying a silicon compound having linker groups, where the anchor groups are iso(thio)cyanate groups and the linker groups are nucleophilic groups, or vice versa Method for reinforcing a structured photoresist comprises: (a) coating a substrate with a chemically reinforced photoresist comprising (i) a film-forming polymer having acid-labile groups that are cleaved with acid to form optionally protected anchor groups and groups that increase the solubility of the polymer in aqueous alkaline developers, (ii) a photochemical acid precursor and (iii) a solvent; (b) drying the resist to form a film; (c) structuring the film; (d) deprotecting the anchor groups if necessary; (e) applying a reinforcing agent comprising one or more silicon-containing groups and one or more linker groups, where the anchor groups are iso(thio)cyanate groups and the linker groups are nucleophilic groups, or vice versa, so that the anchor and linker groups react to form covalent bonds; and (f) removing excess reinforcing agent.

公开(公告)号：DE10135246B4

公开(公告)日：2005-10-20

申请号：DE10135246

申请日：2001-07-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ESCHBAUMER CHRISTIAN ,  HOHLE CHRISTOPH ,  SEBALD MICHAEL ,  ROTTSTEGGE JOERG

IPC: G03F7/004 ,  G03F7/039

公开(公告)号：DE10137099A1

公开(公告)日：2003-02-27

申请号：DE10137099

申请日：2001-07-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HOHLE CHRISTOPH ,  ROTTSTEGGE JOERG ,  ESCHBAUMER CHRISTIAN ,  SEBALD MICHAEL

IPC: G03F7/004 ,  G03F7/039

Abstract: Chemically-enhanced photo-resist (I) comprising polymer, photo-acid former and solvent, in which the polymer contains at least mono-fluorinated acid-labile residues attached to a polar group so that the solubility of the polymer in polar developers is increased after cleavage of the acid-labile residues. An Independent claim is also included for a method for structuring substrates by coating the substrate with (I), exposing parts of the resulting photo-resist film to light with a wavelength of less than 200 nm and developing the exposed film to form a structure which is transferred to the substrate.

公开(公告)号：DE10131667A1

公开(公告)日：2003-01-16

申请号：DE10131667

申请日：2001-06-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ROTTSTEGGE JOERG ,  KUEHN EBERHARD ,  HERBST WALTRAUD ,  ESCHBAUMER CHRISTIAN ,  HOHLE CHRISTOPH ,  FALK GERTRUD ,  SEBALD MICHAEL

IPC: G03F7/32 ,  G03F7/40

Abstract: Production of amplified negative resist structures uses a chemically amplified resist containing a polymer (IA) with acid-labile groups, releasing an anchor group (AG) to give a polymer (IB) with changed polarity, a photoacid and a solvent (II). Development after exposure uses a developer containing a solvent for (IA) but not (IB) and an agent containing silicon and group(s) co-ordinating with AG. Production of amplified negative resist structures comprises: (1) coating a substrate with a chemically amplified resist containing a polymer (IA) with acid-labile groups, which release an anchor group (AG), giving a polymer (IB) with changed polarity, a photoacid and a solvent (II); (2) removing (II); (3) selective exposure to liberate acid; (4) contrasting by releasing AG; (5) development with a developer containing a solvent, in which (IA) is soluble but (IB) is largely insoluble or swellable, and an amplifying agent containing silicon, which contains reactive group(s) that can co-ordinate with AG; and (6) removing excess developer.

公开(公告)号：DE10131667B4

公开(公告)日：2007-05-31

申请号：DE10131667

申请日：2001-06-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ROTTSTEGGE JOERG ,  KUEHN EBERHARD ,  HERBST WALTRAUD ,  ESCHBAUMER CHRISTIAN ,  HOHLE CHRISTOPH ,  FALK GERTRUD ,  SEBALD MICHAEL

IPC: G03F7/32 ,  G03F7/40

公开(公告)号：DE10153497A1

公开(公告)日：2003-06-05

申请号：DE10153497

申请日：2001-10-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： FERBITZ JENS ,  MORMANN WERNER ,  ROTTSTEGGE JOERG ,  HOHLE CHRISTOPH ,  ESCHBAUMER CHRISTIAN ,  SEBALD MICHAEL

IPC: G03F7/40

Abstract: Method for reinforcing a structured photoresist comprising a polymer having anchor groups comprises applying a silicon compound having linker groups, where the anchor groups are iso(thio)cyanate groups and the linker groups are nucleophilic groups, or vice versa Method for reinforcing a structured photoresist comprises: (a) coating a substrate with a chemically reinforced photoresist comprising (i) a film-forming polymer having acid-labile groups that are cleaved with acid to form optionally protected anchor groups and groups that increase the solubility of the polymer in aqueous alkaline developers, (ii) a photochemical acid precursor and (iii) a solvent; (b) drying the resist to form a film; (c) structuring the film; (d) deprotecting the anchor groups if necessary; (e) applying a reinforcing agent comprising one or more silicon-containing groups and one or more linker groups, where the anchor groups are iso(thio)cyanate groups and the linker groups are nucleophilic groups, or vice versa, so that the anchor and linker groups react to form covalent bonds; and (f) removing excess reinforcing agent.

公开(公告)号：DE10137109A1

公开(公告)日：2003-02-27

申请号：DE10137109

申请日：2001-07-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ROTTSTEGGE JOERG ,  KUEHN EBERHARD ,  HERBST WALTRAUD ,  ESCHBAUMER CHRISTIAN ,  HOHLE CHRISTOPH ,  SEBALD MICHAEL

IPC: G03F7/004 ,  G03F7/075 ,  G03F7/039

Abstract: A photoresist containing polymer, photo-acid former and solvent, in which the polymer chain has at least two parts, one based on alternating silicon and oxygen atoms and the other on carbon atoms, the latter containing acid-labile groups attached to highly polar groups so that the polymer is soluble in aqueous alkaline developers after cleavage of acid-labile groups.

公开(公告)号：DE10131670A1

公开(公告)日：2003-01-16

申请号：DE10131670

申请日：2001-06-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ROTTSTEGGE JOERG ,  ESCHBAUMER CHRISTIAN ,  HOHLE CHRISTOPH ,  HERBST WALTRAUD ,  SEBALD MICHAEL

IPC: G03F7/004 ,  G03F7/039 ,  G03F7/075 ,  G03F7/40 ,  G03F7/38

Abstract: A chemically strengthened resist comprises a film forming polymer, a photoacid and a solvent. The polymer comprises acid labile groups, free groups to make the polymer more soluble in aqueous alkalis, and primary polymer structural units derived from primary monomers, substituted by fluorine(s) and an anchor group for binding a strengthening agent, which optionally comprises a protecting group. An Independent claim is included for post-strengthening of resist structures comprising the steps: (1) application of the resist to a substrate; (2) drying of the resist; (3) exposure of the dried resist to give a resist having a latent image; (4) heating of the exposed resist to a first temperature at which the latent image is converted to a chemical profile and polymer polar groups are released; (5) development of the resist with an aqueous alkaline developer, where the chemical profile region which contains the polymer polar groups is dissolved from the substrate, and a structured resist is obtained; (6) optionally freeing of the anchor groups from the protected anchor groups; (7) application of a strengthening agent to the structured resist; and (8) washing off excess strengthening agent.