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18 records (took 0.027 seconds)

    1.
    发明专利
    未知

    公开(公告)号：DE10137100B4

    公开(公告)日：2005-07-07

    申请号：DE10137100

    申请日：2001-07-30

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： HOHLE CHRISTOPH ,  ROTTSTEGGE JOERG ,  ESCHBAUMER CHRISTIAN ,  SEBALD MICHAEL

    IPC: G03F7/004 ,  G03F7/039

    Abstract: Chemically amplified photoresists exhibit increased transparency at a wavelength of 157 nm. The chemically amplified photoresist includes a polymer containing first repeating units derived from a cinnamic acid or a cinnamic ester, which are at least monofluorinated or substituted by fluoroalkyl groups. Processes for structuring substituents using transparency enhancement of resist copolymers for 157 nm photolithography using fluorinated cinnamic acid derivatives are also included.

    Chemically-enhanced photoresist for lithographic applications in microelectronics, based on a structurable polymer with acid-labile groups, anchor groups and siloxane side chains
    3.
    发明专利
    Chemically-enhanced photoresist for lithographic applications in microelectronics, based on a structurable polymer with acid-labile groups, anchor groups and siloxane side chains 未知

    公开(公告)号：DE10142600A1

    公开(公告)日：2003-04-03

    申请号：DE10142600

    申请日：2001-08-31

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： ROTTSTEGGE JOERG ,  HOHLE CHRISTOPH ,  ESCHBAUMER CHRISTIAN ,  SEBALD MICHAEL ,  DOMKE WOLF DIETER

    IPC: G03F7/004 ,  G03F7/075 ,  G03F7/40 ,  G03F7/039

    Abstract: A chemically-enhanced photoresist comprising polymer, photo-acid generator and solvent, in which the polymer contains organosilyl side chains in addition to acid-labile groups and anchor groups for attachment of a post-enhancement agent. A chemically-enhanced photo-resist comprising (a) a polymer with (a1) acid-labile groups attached to polar groups, resulting in increased solubility of the polymer in polar developers after cleavage of the acid-labile groups and (a2) anchor groups for attachment of a post-enhancement agent, (b) a photo-acid generator and (c) a solvent. The polymer contains first repeat units of formula (I). A = a single bond, -O- or -COO-; B = -(CR R )n-, -(OCR R )n-, 5-20C cycloalkylene or 6-22C arylene, with the proviso that B is a CH2 group and R is H if A is a single bond, and that A and B do not form a Si-O-C group; R = H, 1-10C alkyl, CN or CF3; R -R = H, 1-10C alkyl, 5-20C cycloalkyl or 6-22C aryl (all optionally with acid-cleavable groups attached via ether links, ester links or acetals), or a siloxane group (not simultaneously methyl); R , R = 1-10C alkyl; n = 0-6. An Independent claim is also included for a method for the production of structured resists by (a) coating the above photo-resist onto a substrate; (b) removing solvent to form a light-sensitive film; (c) exposing parts of the film so as to liberate acid in the exposed parts; (d) contrasting the exposed film, with cleavage of acid-labile groups by the liberated acid; (e) developing with a developer to remove the exposed parts and form a structured resist; (f) optionally releasing the anchor groups; (g) applying a post-enhancer; and (h) removing excess post-enhancer.

    4.
    发明专利
    未知

    公开(公告)号：DE10131144A1

    公开(公告)日：2003-04-03

    申请号：DE10131144

    申请日：2001-06-28

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： ROTTSTEGGE JOERG ,  ESCHBAUMER CHRISTIAN ,  HOHLE CHRISTOPH ,  HERBST WALTRAUD ,  SEBALD MICHAEL

    IPC: G03F7/004 ,  G03F7/039 ,  G03F7/40

    Abstract: A process for the post-exposure amplification of resist structures uses amplification of resist structures of fluorinated resist polymers by structural growth of the structures by targeted chemical bonding of fluorinated oligomers. In the first step, a fluorine-containing resist is applied to a substrate. After exposure and development of the resist, bonding of an amplification agent chemically amplifies the resist structures. A fluorine-containing amplification agent is preferably used to achieve an improved reaction between polymer and amplification agent due to the improved miscibility of the molecular chains.

    7.
    发明专利
    未知

    公开(公告)号：DE10131144B4

    公开(公告)日：2006-01-19

    申请号：DE10131144

    申请日：2001-06-28

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： ROTTSTEGGE JOERG ,  ESCHBAUMER CHRISTIAN ,  HOHLE CHRISTOPH ,  HERBST WALTRAUD ,  SEBALD MICHAEL

    IPC: G03F7/004 ,  G03F7/039 ,  G03F7/40

    Abstract: A process for the post-exposure amplification of resist structures uses amplification of resist structures of fluorinated resist polymers by structural growth of the structures by targeted chemical bonding of fluorinated oligomers. In the first step, a fluorine-containing resist is applied to a substrate. After exposure and development of the resist, bonding of an amplification agent chemically amplifies the resist structures. A fluorine-containing amplification agent is preferably used to achieve an improved reaction between polymer and amplification agent due to the improved miscibility of the molecular chains.

    Reamplification of resist structure, for structurizing substrate for microelectronic circuit, uses polymer with acid-labile groups releasing solubilizing groups and anchor groups co-ordinating with amplifying agent
    9.
    发明专利
    Reamplification of resist structure, for structurizing substrate for microelectronic circuit, uses polymer with acid-labile groups releasing solubilizing groups and anchor groups co-ordinating with amplifying agent 未知

    公开(公告)号：DE10129577A1

    公开(公告)日：2003-01-16

    申请号：DE10129577

    申请日：2001-06-20

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： ROTTSTEGGE JOERG ,  FALK GERTRUD ,  ESCHBAUMER CHRISTIAN ,  HOHLE CHRISTOPH ,  SEBALD MICHAEL

    IPC: G03F7/004 ,  G03F7/40

    Abstract: Re-amplification of resist structures uses a chemically amplified resist containing polymer (I) with acid-labile groups and (protected) anchor groups (AG) for co-ordination with amplifying agent (II), photoacid and solvent. The resist is exposed, heated, developed and treated with (II). (II) and AG each contain a polar or ionic group and form a non-covalent bond on co-ordination. Re-amplification of resist structures comprises: (1) coating a substrate with a chemically amplified resist containing a polymer (I) with acid-labile groups, which release a group increasing the solubility of (I) in aqueous alkaline developers, and also optionally protected anchor groups (AG) for co-ordination with amplifying agent (II), a photoacid and a solvent (III); (2) removing (III); (3) selective exposure to form a latent image; (4) heating to a first temperature to convert the latent image to a chemical profile; (5) development with an aqueous alkaline developer, which dissolves the areas formed by the chemical profile from the substrate, giving a structurized resist; (6) releasing AG from the protected AG if necessary; (7) applying (II) to the structurized resist; and (8) removing excess (II) by washing. (II) and AG each contain a polar or ionic group and form a non-covalent bond on co-ordination.

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