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公开(公告)号：DE10350686A1
公开(公告)日：2005-06-16
申请号：DE10350686
申请日：2003-10-30
Applicant: INFINEON TECHNOLOGIES AG
Inventor： HERBST WALTRAUD , KRAGLER KARL , SEBALD MICHAEL
Abstract: The outgassing products, which are formed when photoresist systems, are exposed to laser radiation are verified by a mass spectrometer connected to the irradiation chamber.
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公开(公告)号：DE10131667A1
公开(公告)日：2003-01-16
申请号：DE10131667
申请日：2001-06-29
Applicant: INFINEON TECHNOLOGIES AG
Inventor： ROTTSTEGGE JOERG , KUEHN EBERHARD , HERBST WALTRAUD , ESCHBAUMER CHRISTIAN , HOHLE CHRISTOPH , FALK GERTRUD , SEBALD MICHAEL
Abstract: Production of amplified negative resist structures uses a chemically amplified resist containing a polymer (IA) with acid-labile groups, releasing an anchor group (AG) to give a polymer (IB) with changed polarity, a photoacid and a solvent (II). Development after exposure uses a developer containing a solvent for (IA) but not (IB) and an agent containing silicon and group(s) co-ordinating with AG. Production of amplified negative resist structures comprises: (1) coating a substrate with a chemically amplified resist containing a polymer (IA) with acid-labile groups, which release an anchor group (AG), giving a polymer (IB) with changed polarity, a photoacid and a solvent (II); (2) removing (II); (3) selective exposure to liberate acid; (4) contrasting by releasing AG; (5) development with a developer containing a solvent, in which (IA) is soluble but (IB) is largely insoluble or swellable, and an amplifying agent containing silicon, which contains reactive group(s) that can co-ordinate with AG; and (6) removing excess developer.
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公开(公告)号：DE10131144B4
公开(公告)日：2006-01-19
申请号：DE10131144
申请日：2001-06-28
Applicant: INFINEON TECHNOLOGIES AG
Inventor： ROTTSTEGGE JOERG , ESCHBAUMER CHRISTIAN , HOHLE CHRISTOPH , HERBST WALTRAUD , SEBALD MICHAEL
Abstract: A process for the post-exposure amplification of resist structures uses amplification of resist structures of fluorinated resist polymers by structural growth of the structures by targeted chemical bonding of fluorinated oligomers. In the first step, a fluorine-containing resist is applied to a substrate. After exposure and development of the resist, bonding of an amplification agent chemically amplifies the resist structures. A fluorine-containing amplification agent is preferably used to achieve an improved reaction between polymer and amplification agent due to the improved miscibility of the molecular chains.
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公开(公告)号：DE10142590A1
公开(公告)日：2003-04-03
申请号：DE10142590
申请日：2001-08-31
Applicant: INFINEON TECHNOLOGIES AG
Inventor： ROTTSTEGGE JOERG , KUEHN EBERHARD , HERBST WALTRAUD , ESCHBAUMER CHRISTIAN , HOHLE CHRISTOPH , FALK GERTRUD , SEBALD MICHAEL
IPC: G03F7/40 , H01L21/027 , H01L21/308 , G03F7/00 , G03F7/26
Abstract: Production of resist structures comprises: applying a resist film on a substrate (1); forming a resist structure with bars from the film; and removing reinforced sections (8). The resist structure has reinforced side wall structures (6) and reinforced sections. Preferred Features: A covering layer of the bars is reinforced together with the side walls so that a reinforced covering layer is obtained which can be selectively removed. An intermediate layer is provided between two resist layers by which mixing of the resist layer is prevented.
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公开(公告)号：DE102004052267B3
公开(公告)日：2006-08-31
申请号：DE102004052267
申请日：2004-10-27
Applicant: INFINEON TECHNOLOGIES AG
Inventor： KRAGLER KARL , HERBST WALTRAUD , SEBALD MICHAEL , HOHLE CHRISTOPH
Abstract: A method for forming a lithography mask on a surface region of a wafer is presented. In one embodiment of the method according to the invention time periods from the end of an exposure operation until the beginning of a thermal aftertreatment for the sections of the semiconductor material region are to be identical or approximately identical.
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Patent Agency Ranking
公开(公告)号：DE102004021392A1
公开(公告)日：2005-12-01
申请号：DE102004021392
申请日：2004-04-30
Applicant: INFINEON TECHNOLOGIES AG
Inventor： HOHLE CHRISTOPH , HERBST WALTRAUD
IPC: H01L21/00 , H01L21/324 , H01L21/66
Abstract: A hotplate for processing semiconductor wafers (2) comprises a chamber housing (12) in a process chamber (10) and at least one outlet (14) for process gases (42) and comprises a precision hotplate (11) to hold and heat wafers. A housing element (18) heats the section of the chamber (12) above the wafer to 20% below the wafer temperature. An independent claim is also included for a method of heat-processing semiconductor wafers as above.
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公开(公告)号：DE10350688B3
公开(公告)日：2005-06-09
申请号：DE10350688
申请日：2003-10-30
Applicant: INFINEON TECHNOLOGIES AG
Inventor： HERBST WALTRAUD , KRAGLER KARL , SEBALD MICHAEL
Abstract: Outgassing products, which are formed during the exposure of photoresist systems by laser irradiation, are adsorbed on a proof plate for further analysis.
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公开(公告)号：DE10131144A1
公开(公告)日：2003-04-03
申请号：DE10131144
申请日：2001-06-28
Applicant: INFINEON TECHNOLOGIES AG
Inventor： ROTTSTEGGE JOERG , ESCHBAUMER CHRISTIAN , HOHLE CHRISTOPH , HERBST WALTRAUD , SEBALD MICHAEL
Abstract: A process for the post-exposure amplification of resist structures uses amplification of resist structures of fluorinated resist polymers by structural growth of the structures by targeted chemical bonding of fluorinated oligomers. In the first step, a fluorine-containing resist is applied to a substrate. After exposure and development of the resist, bonding of an amplification agent chemically amplifies the resist structures. A fluorine-containing amplification agent is preferably used to achieve an improved reaction between polymer and amplification agent due to the improved miscibility of the molecular chains.
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公开(公告)号：DE10131667B4
公开(公告)日：2007-05-31
申请号：DE10131667
申请日：2001-06-29
Applicant: INFINEON TECHNOLOGIES AG
Inventor： ROTTSTEGGE JOERG , KUEHN EBERHARD , HERBST WALTRAUD , ESCHBAUMER CHRISTIAN , HOHLE CHRISTOPH , FALK GERTRUD , SEBALD MICHAEL
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公开(公告)号：DE10208449A1
公开(公告)日：2003-09-11
申请号：DE10208449
申请日：2002-02-27
Applicant: INFINEON TECHNOLOGIES AG
Inventor： ROTTSTEGGE JOERG , HERBST WALTRAUD , FALK GERTRUD , KUEHN EBERHARD
Abstract: Chemical amplification, comprises coating substrate with chemically amplified photoresist containing film-forming polymer (I), with acid-labile groups and anchor groups, and photo-acid generator, drying, selective exposure, heating and development to give structurized resist; removing any protective groups; applying solution of amplification agent reacting with anchor groups of (I); and removing excess with solvent. Chemical amplification of structurized resist comprises (a) coating a substrate with a chemically amplified photoresist containing a film-forming polymer (I) that has acid-labile groups, which are released by the action of acid and increase the solubility of (I) in aqueous alkaline developers, and also optionally protected anchor groups for fixing amplification agents, a photo-acid generator (PAG) and a first solvent (S-1) in which (I) is soluble; (b) drying to give a resist film; (c) selective exposure to release acid groups from PAG; (d) heating to eliminate the acid-labile groups in the exposed areas and release polar groups on (I), giving unpolar and polar resist sections; (e) developing the resist with an aqueous alkaline developer, which has higher polarity than (S-1) and does not dissolve (I), so that polar resist sections are removed from the substrate, leaving a structurized resist; (f) releasing the anchor groups from the protected anchor groups if necessary; (g) applying a solution of a amplification agent, which has reactive group(s) that can react with the anchor groups of (I), dissolved in a second solvent (S-2), which has lower polarity than (S-1) and does not dissolve (I); (h) removing excess amplification agent with a third solvent (S-3), which has lower polarity than (S-1) and does not dissolve (I).
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