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    BOTTOM RESIST FOR TWO LAYER TECHNIQUE
    2.
    发明专利
    BOTTOM RESIST FOR TWO LAYER TECHNIQUE 失效

    公开(公告)号：JP2000321776A

    公开(公告)日：2000-11-24

    申请号：JP2000124499

    申请日：2000-04-25

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： HIEN STEFAN DR ,  SEBALD MICHAEL

    IPC: G03F7/095 ,  G03F7/004 ,  G03F7/09 ,  G03F7/11 ,  H01L21/027 ,  G03F7/028

    Abstract: PROBLEM TO BE SOLVED: To provide a bottom resist which is compatible with a chemically strengthened photoresist and has high stability in a halogen plasma by incorporating a phenol-base foundation polymer, a thermally active compound which liberates sulfonic acid in excess of a specific temp. and a solvent into the resist. SOLUTION: The resist contains the phenol-base foundation polymer, the thermally active compound which liberates the sulfonic acid in excess of 100 deg.C and the solvent. The content of the foundation polymer is, for example, preferably 8 to 40 mass%, advantageously 8 to 15 mass%. The content of the thermally active compound is preferably 0.0005 to 4 mass%, advantageously 0.02 to 0.1 mass% and the balance is the solvent. The crosslinking reaction is purely thermally effected at a temperature exceeding 100 deg.C and in a short time. The foundation polymer of the resist has an aromatic structure of a high content and renders high corrosion stability. The thermally active compound is an onium salt, etc., of a constitutional formula R2I+X- (1), where the group R denotes 1-12C alkyl, etc.

    CHEMICALLY AMPLIFIED SHORT WAVELENGTH RESIST
    3.
    发明申请
    CHEMICALLY AMPLIFIED SHORT WAVELENGTH RESIST 审中-公开
    化学放大的短波长电阻

    公开(公告)号：WO0155789A2

    公开(公告)日：2001-08-02

    申请号：PCT/EP0100824

    申请日：2001-01-25

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： DOMKE WOLF-DIETER ,  HIEN STEFAN ,  RICHTER ERNST ,  SEBALD MICHAEL

    IPC: G03F7/004 ,  G03F7/039 ,  G03F7/00

    CPC classification number: G03F7/039 ,  G03F7/0045

    Abstract: A resist capable of imaging by exposure to radiation having a wave length of about 157 nm includes an imagewise convertible film-forming polymer substituted with at least one chemical functional deblocking group cleavable under acid-catalyzed baking conditions to form polar groups imparting solubility of the deblocked polymer in aqueous alkaline developer. At least one photo acid generator compound releases an acid upon exposure to radiation and catalyzes the cleavage of the deblocking groups. An effective amount of at least one radical scavenger compound is used to minimize reactions decreasing the solubility of the deblocked polymer in aqueous alkaline developer. At least one solvent is also provided.

    Abstract translation: 能够通过暴露于波长为约157nm的辐射而成像的抗蚀剂包括成像转化成膜聚合物，其被至少一种在酸催化烘烤条件下可切割的化学功能性解封闭基团取代，以形成极性基团，赋予解封的 水性碱性显影剂中的聚合物。 至少一种光酸产生剂化合物在暴露于辐射时释放出酸并催化解封组的裂解。 使用有效量的至少一种自由基清除剂化合物以使减少解封聚合物在含水碱性显影剂中的溶解度的反应最小化。 还提供至少一种溶剂。

    METHOD AND APPARATUS FOR A POST EXPOSURE BAKE OF A RESIST
    4.
    发明申请
    METHOD AND APPARATUS FOR A POST EXPOSURE BAKE OF A RESIST 审中-公开
    用于暴露后暴露的方法和装置

    公开(公告)号：WO2006125509A3

    公开(公告)日：2007-11-01

    申请号：PCT/EP2006004050

    申请日：2006-04-29

    Applicant: INFINEON TECHNOLOGIES AG ,  ELIAN KLAUS ,  SEBALD MICHAEL

    Inventor： ELIAN KLAUS ,  SEBALD MICHAEL

    IPC: G03F7/20 ,  G03F7/38

    CPC classification number: G03F7/203 ,  G03F7/38

    Abstract: In a Method for patterning a chemically amplified resist layer, the resist layer is provided on a substrate, the resist layer comprising resist molecules in a first state with a first solubility. Predetermined regions of the resist layer are exposed to a first radiation to generate a catalytic species in the exposed predetermined regions of the resist layer. The resist layer is exposed to a second radiation and resist molecules in the predetermined regions of the resist layer are converted from the first state into a second state with a second solubility, the conversion of a resist molecule being catalyzed by the catalytic species, and the activation energy of the catalyzed conversion of the resist molecule being lowered by the absorption of the second radiation in the resist molecule. The resist layer is developed with a predetermined developer.

    Abstract translation: 在化学放大抗蚀剂层的图案化方法中，抗蚀剂层设置在基板上，抗蚀剂层包含具有第一溶解度的第一状态的抗蚀剂分子。 抗蚀剂层的预定区域暴露于第一辐射以在抗蚀剂层的暴露的预定区域中产生催化物质。 抗蚀剂层暴露于第二辐射，并且抗蚀剂层的预定区域中的抗蚀剂分子从第一状态转变为具有第二溶解度的第二状态，抗蚀剂分子由催化物质催化的转化，以及 通过抗蚀剂分子中的第二辐射的吸收，抗蚀剂分子的催化转化的活化能降低。 抗蚀剂层用预定的显影剂显影。

    6.
    发明专利
    未知

    公开(公告)号：DE10203839B4

    公开(公告)日：2007-10-18

    申请号：DE10203839

    申请日：2002-01-31

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： ROTTSTEGGE JOERG ,  SEBALD MICHAEL

    IPC: G03F7/039 ,  G03F7/40

    Abstract: A photoresist contains a polymer that has no silicon-containing groups. Consequently, no expulsion of silicon-containing compounds in gaseous form occurs on exposure to short-wave radiation. The polymer is obtained by terpolymerization of a first comonomer having a group cleavable under acid catalysis, a second comonomer having an anchor group, and a monounsaturated hydrocarbon, in which individual carbon atoms of the carbon skeleton may also be replaced by oxygen, as a third comonomer. The polymer has a low glass transition temperature, and the photoresist therefore has a good layer quality on film formation and good structurability.

    7.
    发明专利
    未知

    公开(公告)号：DE102004052267B3

    公开(公告)日：2006-08-31

    申请号：DE102004052267

    申请日：2004-10-27

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： KRAGLER KARL ,  HERBST WALTRAUD ,  SEBALD MICHAEL ,  HOHLE CHRISTOPH

    IPC: G03F7/40 ,  G03F7/00 ,  G03F7/20

    Abstract: A method for forming a lithography mask on a surface region of a wafer is presented. In one embodiment of the method according to the invention time periods from the end of an exposure operation until the beginning of a thermal aftertreatment for the sections of the semiconductor material region are to be identical or approximately identical.

    10.
    发明专利
    未知

    公开(公告)号：DE10203839A1

    公开(公告)日：2003-09-04

    申请号：DE10203839

    申请日：2002-01-31

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： ROTTSTEGGE JOERG ,  SEBALD MICHAEL

    IPC: G03F7/039 ,  G03F7/40

    Abstract: A photoresist contains a polymer that has no silicon-containing groups. Consequently, no expulsion of silicon-containing compounds in gaseous form occurs on exposure to short-wave radiation. The polymer is obtained by terpolymerization of a first comonomer having a group cleavable under acid catalysis, a second comonomer having an anchor group, and a monounsaturated hydrocarbon, in which individual carbon atoms of the carbon skeleton may also be replaced by oxygen, as a third comonomer. The polymer has a low glass transition temperature, and the photoresist therefore has a good layer quality on film formation and good structurability.

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