公开(公告)号：DE10120656C2

公开(公告)日：2003-07-10

申请号：DE10120656

申请日：2001-04-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHLOEGL ANDREAS ,  SCHMITT MARKUS ,  SCHULZE HANS-JOACHIM ,  VOSSEBUERGER MARKUS ,  WILLMEROTH ARMIN

IPC: H01L21/261 ,  H01L29/06 ,  H01L29/10 ,  H01L29/32 ,  H01L29/78

Abstract: The invention relates to a semiconductor component with enhanced avalanche resistance. At the nominal current of this semiconductor component, in the event of an avalanche the voltage applied between two electrodes is 6% or more above the static reverse voltage at the same temperature.