公开(公告)号：DE102004063997B4

公开(公告)日：2010-02-11

申请号：DE102004063997

申请日：2004-06-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： LANGGUTH GERNOT ,  WILLE HOLGER ,  MUELLER KARLHEINZ

IPC: H01L27/082 ,  H01L21/8222 ,  H01L21/8232 ,  H01L27/06 ,  H01L27/146 ,  H01L31/105

Abstract: An integrated circuit arrangement includes a pin photodiode and a highly doped connection region of a bipolar transistor. A production method produces an intermediate region of the pin diode with a large depth and without auto-doping in a central region.

公开(公告)号：DE102004031606A1

公开(公告)日：2006-01-19

申请号：DE102004031606

申请日：2004-06-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： LANGGUTH GERNOT ,  WILLE HOLGER ,  MUELLER KARLHEINZ

IPC: H01L21/8222 ,  H01L27/06 ,  H01L27/082 ,  H01L27/144 ,  H01L27/146 ,  H01L31/105

Abstract: An integrated circuit arrangement includes a pin photodiode and a highly doped connection region of a bipolar transistor. A production method produces an intermediate region of the pin diode with a large depth and without auto-doping in a central region.

公开(公告)号：DE10350643A1

公开(公告)日：2005-06-16

申请号：DE10350643

申请日：2003-10-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WILLE HOLGER ,  LANGGUTH GERNOT ,  MUELLER KARL-HEINZ

IPC: H01L31/0216 ,  H01L31/0232 ,  H01L31/0236 ,  H01L31/18