公开(公告)号：DE60030820T2

公开(公告)日：2007-09-20

申请号：DE60030820

申请日：2000-10-19

Applicant: QIMONDA AG ,  IBM

Inventor： HAFFNER HENNING ,  HOENIGSCHMID HEINZ ,  SAMUELS DONALD J

IPC: G03F7/20 ,  G03F1/00

Abstract: A method, and a system for employing the method, for providing a modified optical proximity correction (OPC) for correcting distortions of pattern lines on a semiconductor circuit wafer. The method comprises producing a mask having one or more pattern regions, and producing the semiconductor circuit wafer from the mask. The pattern regions include one or more non-edge pattern regions located adjacent to other of the non-edge pattern regions on the mask. The pattern regions further include one or more edge pattern regions located at or near an area on the mask not having the other non-edge pattern regions. The edge pattern regions have widths calculated to minimize the variance in dimensions between one or more pattern lines on the semiconductor circuit wafer formed from them and one or more pattern lines on the semiconductor circuit wafer formed from the non-edge pattern regions. The distances between any two of the pattern regions are calculated to minimize the variance in dimensions between the one or more pattern lines formed from the edge pattern regions and the one or more pattern lines formed from the non-edge pattern regions. The above producing step includes producing the semiconductor circuit wafer from the mask having the pattern lines formed from the non-edge pattern regions and having the pattern lines formed from the edge pattern regions, where the pattern lines formed from the non-edge regions are permitted to differ in distances between them.

公开(公告)号：DE69822775T2

公开(公告)日：2005-02-10

申请号：DE69822775

申请日：1998-12-23

Applicant: INFINEON TECHNOLOGIES AG ,  IBM

Inventor： HOENIGSCHMID HEINZ ,  MANDELMAN JACK A ,  KLEINHENZ RICHARD L

IPC: G11C11/408 ,  G11C5/14 ,  G11C11/403 ,  G11C11/4074 ,  G11C11/407

Abstract: Reduced current consumption in a DRAM during standby mode is achieved by switching off the power source that is connected to, for example, the n-well.

公开(公告)号：DE69841838D1

公开(公告)日：2010-09-30

申请号：DE69841838

申请日：1998-06-29

Applicant: INFINEON TECHNOLOGIES AG ,  IBM

Inventor： HOENIGSCHMID HEINZ ,  DEBROSSE JOHN

IPC: H01L21/8242 ,  H01L27/108 ,  G11C11/4097

公开(公告)号：DE69920121T2

公开(公告)日：2005-10-13

申请号：DE69920121

申请日：1999-07-29

Applicant: SIEMENS AG ,  IBM

Inventor： HOENIGSCHMID HEINZ ,  NETIS DMITRY

IPC: H01L27/06 ,  G11C11/407 ,  H01L21/8234 ,  H01L21/8242 ,  H01L27/088 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L27/02

Abstract: An arrangement of enhanced drivability transistors is disclosed herein which includes a plurality of conductor patterns, wherein the conductor patterns include ring-shaped portions which enclose device diffusion contacts and the ring-shaped portions form the gate conductors of insulated gate field effect transistors (IGFETs).

公开(公告)号：AT276587T

公开(公告)日：2004-10-15

申请号：AT99306023

申请日：1999-07-29

Applicant: IBM ,  SIEMENS AG

Inventor： HOENIGSCHMID HEINZ ,  NETIS DMITRY

IPC: H01L27/06 ,  G11C11/407 ,  H01L21/8234 ,  H01L21/8242 ,  H01L27/088 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L27/02

Abstract: An arrangement of enhanced drivability transistors is disclosed herein which includes a plurality of conductor patterns, wherein the conductor patterns include ring-shaped portions which enclose device diffusion contacts and the ring-shaped portions form the gate conductors of insulated gate field effect transistors (IGFETs).

公开(公告)号：HK1031465A1

公开(公告)日：2001-06-15

申请号：HK01102070

申请日：2001-03-22

Applicant: IBM

Inventor： HOENIGSCHMID HEINZ ,  NETIS DMITRY

IPC: H01L20060101 ,  H01L

公开(公告)号：DE60304209T2

公开(公告)日：2006-12-14

申请号：DE60304209

申请日：2003-10-28

Applicant: IBM ,  INFINEON TECHNOLOGIES AG

Inventor： DEBROSSE JOHN ,  GOGL DIETMAR ,  HOENIGSCHMID HEINZ

IPC: G11C11/16 ,  G11C11/15 ,  H01L21/8246 ,  H01L27/22

Abstract: A memory device includes a magnetic tunnel junction memory cell having a magnetic tunnel junction structure and a read switch. In one example, the read switch is connected to a conductor that is used to write to the magnetic tunnel junction structure. In a further example, the read switch is a transistor electrically coupled to the magnetic tunnel junction structure by a deep via contact. In a further example, the memory device includes a plurality of magnetic tunnel junction memory cells and a plurality of conductors respectively associated with the cells for writing information to the associated magnetic tunnel junction structures. Each read switch is connected to the conductor associated with a magnetic tunnel junction cell other than the cell in which the read switch resides.

公开(公告)号：DE60304209D1

公开(公告)日：2006-05-11

申请号：DE60304209

申请日：2003-10-28

Applicant: IBM ,  INFINEON TECHNOLOGIES AG

Inventor： DEBROSSE JOHN ,  GOGL DIETMAR ,  HOENIGSCHMID HEINZ

IPC: G11C11/16 ,  G11C11/15 ,  H01L21/8246 ,  H01L27/22

Abstract: A memory device includes a magnetic tunnel junction memory cell having a magnetic tunnel junction structure and a read switch. In one example, the read switch is connected to a conductor that is used to write to the magnetic tunnel junction structure. In a further example, the read switch is a transistor electrically coupled to the magnetic tunnel junction structure by a deep via contact. In a further example, the memory device includes a plurality of magnetic tunnel junction memory cells and a plurality of conductors respectively associated with the cells for writing information to the associated magnetic tunnel junction structures. Each read switch is connected to the conductor associated with a magnetic tunnel junction cell other than the cell in which the read switch resides.

公开(公告)号：DE69920121D1

公开(公告)日：2004-10-21

申请号：DE69920121

申请日：1999-07-29

Applicant: SIEMENS AG ,  IBM

Inventor： HOENIGSCHMID HEINZ ,  NETIS DMITRY

IPC: H01L27/06 ,  G11C11/407 ,  H01L21/8234 ,  H01L21/8242 ,  H01L27/088 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L27/02

Abstract: An arrangement of enhanced drivability transistors is disclosed herein which includes a plurality of conductor patterns, wherein the conductor patterns include ring-shaped portions which enclose device diffusion contacts and the ring-shaped portions form the gate conductors of insulated gate field effect transistors (IGFETs).

公开(公告)号：DE69822775D1

公开(公告)日：2004-05-06

申请号：DE69822775

申请日：1998-12-23

Applicant: INFINEON TECHNOLOGIES AG ,  IBM

Inventor： HOENIGSCHMID HEINZ ,  MANDELMAN JACK A ,  KLEINHENZ RICHARD L

IPC: G11C11/408 ,  G11C5/14 ,  G11C11/403 ,  G11C11/4074 ,  G11C11/407

Abstract: Reduced current consumption in a DRAM during standby mode is achieved by switching off the power source that is connected to, for example, the n-well.