公开(公告)号：US20250105222A1

公开(公告)日：2025-03-27

申请号：US18475326

申请日：2023-09-27

Applicant: Intel Corporation

Inventor： Gang Duan ,  Yosuke Kanaoka ,  Minglu Liu ,  Srinivas V. Pietambaram ,  Brandon C. Marin ,  Bohan Shan ,  Haobo Chen ,  Benjamin T. Duong ,  Jeremy Ecton ,  Suddhasattwa Nad

IPC: H01L25/10 ,  H01L23/00 ,  H01L23/29 ,  H01L23/538

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first layer including first dies in a first insulating material; a second layer on the first layer, the second layer including second dies and third dies in a second insulating material, the second dies having a first thickness, the third dies having a second thickness different than the first thickness, and the second dies and the third dies having a surface, wherein the surfaces of the second and third dies have a combined surface area between 3,000 square millimeters (mm2) and 9,000 mm2; and a redistribution layer (RDL) between the first layer and the second layer, the RDL including conductive pathways through the RDL, wherein the first dies are electrically coupled to the second dies and the third dies by the conductive pathways through the RDL and by interconnects.

公开(公告)号：US20250006645A1

公开(公告)日：2025-01-02

申请号：US18343892

申请日：2023-06-29

Applicant: Intel Corporation

Inventor： Xiao Liu ,  Bohan Shan ,  Dingying Xu ,  Gang Duan ,  Haobo Chen ,  Hongxia Feng ,  Jung Kyu Han ,  Xiaoying Guo ,  Zhixin Xie ,  Xiyu Hu ,  Robert Alan May ,  Kristof Kuwawi Darmawikarta ,  Changhua Liu ,  Yosuke Kanaoka

IPC: H01L23/538 ,  H01L23/00 ,  H01L23/15 ,  H01L23/31 ,  H01L23/58 ,  H01L25/10

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first layer of a substrate including a first material having a cavity and a conductive pad at a bottom of the cavity; a first microelectronic component having a first surface and an opposing second surface, the first microelectronic component in the cavity and electrically coupled to the conductive pad at the bottom of the cavity; a second layer of the substrate on the first layer of the substrate, the second layer including a second material that extends into the cavity and on and around the first microelectronic component, wherein the second material includes an organic photoimageable dielectric (PID) or an organic non-photoimageable dielectric (non-PID); and a second microelectronic component electrically coupled to the second surface of the first microelectronic component by conductive pathways through the second layer of the substrate.

公开(公告)号：US20240243087A1

公开(公告)日：2024-07-18

申请号：US18620569

申请日：2024-03-28

Applicant: Intel Corporation

Inventor： Ryan Joseph Carrazzone ,  Anastasia Arrington ,  Haobo Chen ,  Hongxia Feng ,  Catherine Ka-Yan Mau ,  Kyle Matthew McElhinny ,  Dingying Xu

IPC: H01L23/00 ,  H01L21/48 ,  H01L23/498 ,  H01L23/538 ,  H01L25/065

CPC classification number: H01L24/14 ,  H01L21/4846 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/538 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L25/0655 ,  H01L2224/1146 ,  H01L2224/1162 ,  H01L2224/11849 ,  H01L2224/1357 ,  H01L2224/1403 ,  H01L2224/16227 ,  H01L2924/384

Abstract: Systems, apparatus, articles of manufacture, and methods to reduce variation in height of bumps after flow are disclosed. An example apparatus includes a substrate of an integrated circuit package, a first bump on the substrate, a second bump on the substrate, and a third bump on the substrate. The first bump includes first solder on a first metal pad. The first metal pad has a first width and a first thickness. The second bump includes second solder on a second metal pad. The second metal pad has a second width and a second thickness. The second width is less than the first width. The second thickness matches the first thickness. The third bump includes third solder on a third metal pad. The third metal pad has a third width. The third width less than the second width.

公开(公告)号：US20240222304A1

公开(公告)日：2024-07-04

申请号：US18148148

申请日：2022-12-29

Applicant: Intel Corporation

Inventor： Bohan Shan ,  Jiaqi Wu ,  Haobo Chen ,  Srinivas Pietambaram ,  Bai Nie ,  Gang Duan ,  Kyle Arrington ,  Ziyin Lin ,  Hongxia Feng ,  Yiqun Bai ,  Xiaoying Guo ,  Dingying Xu

IPC: H01L23/00 ,  H01L23/538

CPC classification number: H01L24/16 ,  H01L23/538 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/09 ,  H01L24/11 ,  H01L24/13 ,  H01L24/17 ,  H01L24/81 ,  H01L25/16

Abstract: Methods and apparatus to reduce solder bump bridging between two substrates. An apparatus includes a first substrate including a first bump and a second bump spaced apart from the first bump, the first bump including a first base, the second bump including a second base; and a second substrate including a third bump and a fourth bump spaced apart from the third bump, the third bump including a third base, the fourth bump including a fourth base, the first base electrically coupled to the third base by first solder, the second base electrically coupled to the fourth base by second solder, the first solder having a first volume, the second solder having a second volume, the first volume less than the second volume.

公开(公告)号：US20240222238A1

公开(公告)日：2024-07-04

申请号：US18091543

申请日：2022-12-30

Applicant: Intel Corporation

Inventor： Bohan Shan ,  Haobo Chen ,  Srinivas Venkata Ramanuja Pietambaram ,  Bai Nie ,  Gang Duan ,  Kyle Jordan Arrington ,  Ziyin Lin ,  Hongxia Feng ,  Yiqun Bai ,  Xiaoying Guo ,  Dingying Xu

IPC: H01L23/498 ,  H01L23/00 ,  H01L23/15

CPC classification number: H01L23/49811 ,  H01L23/15 ,  H01L23/49827 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16227 ,  H01L2224/81815

Abstract: An integrated circuit device substrate includes a glass substrate with a first major surface comprising a plateau region, a cavity region, and a wall between the plateau region and the cavity region. The first major surface includes thereon a first dielectric region, and the plateau region includes a plurality of conductive pillars. A second major surface of the glass substrate opposite the first major surface includes thereon a second dielectric layer, wherein the second dielectric layer includes at least one dielectric-free window underlying the cavity region.

公开(公告)号：US20240215269A1

公开(公告)日：2024-06-27

申请号：US18086232

申请日：2022-12-21

Applicant: Intel Corporation

Inventor： Bohan Shan ,  Haobo Chen ,  Yiqun Bai ,  Dingying Xu ,  Srinivas Venkata Ramanuja Pietambaram ,  Hongxia Feng ,  Gang Duan ,  Xiaoying Guo ,  Ziyin Lin ,  Bai Nie ,  Kyle Jordan Arrington

IPC: H10B80/00 ,  H01L23/00 ,  H01L23/498 ,  H01L23/538 ,  H01L25/16 ,  H01L25/18

CPC classification number: H10B80/00 ,  H01L23/49816 ,  H01L23/5386 ,  H01L23/5389 ,  H01L24/05 ,  H01L24/13 ,  H01L25/16 ,  H01L25/18 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/13023

Abstract: An electronic system includes a substrate that includes a glass core layer including a cavity formed through the glass core layer; at least one active component die disposed in the cavity; a first buildup layer contacting a first surface of the glass core layer and a first surface of the at least one active component die, wherein the first buildup layer includes electrically conductive interconnect contacting the at least one active component die and extending to a first surface of the substrate; a second buildup layer contacting a second surface of the glass core layer and a second surface of the at least one active component die; and one or more solder bumps on a second surface of the substrate and contacting the second surface of the at least one active component die.

公开(公告)号：US20240213116A1

公开(公告)日：2024-06-27

申请号：US18069507

申请日：2022-12-21

Applicant: Intel Corporation

Inventor： Kyle Arrington ,  Bohan Shan ,  Haobo Chen ,  Ziyin Lin ,  Hongxia Feng ,  Yiqun Bai ,  Dingying Xu ,  Xiaoying Guo ,  Bai Nie ,  Srinivas Pietambaram ,  Gang Duan

IPC: H01L23/473 ,  H01L23/15 ,  H01L23/467 ,  H01L23/538

CPC classification number: H01L23/473 ,  H01L23/15 ,  H01L23/467 ,  H01L23/5383

Abstract: Methods, systems, apparatus, and articles of manufacture to cool integrated circuit packages having glass substrates are disclosed. An example glass core of an integrated circuit (IC) package disclosed herein includes a fluid inlet to receive a cooling fluid, a fluid outlet, and a channel to fluidly couple the fluid inlet to the fluid outlet, the cooling fluid to flow through the channel from the fluid inlet to the fluid outlet, the channel fluidly isolated from one or more vias extending between a first surface and a second surface of the glass core.

公开(公告)号：US20240203806A1

公开(公告)日：2024-06-20

申请号：US18085291

申请日：2022-12-20

Applicant: Intel Corporation

Inventor： Bohan Shan ,  Bai Nie ,  Leonel R. Arana ,  Dingying XU ,  Srinivas Venkata Ramanuja Pietambaram ,  Hongxia Feng ,  Gang Duan ,  Xiaoying Guo ,  Jeremy D. Ecton ,  Haobo Chen ,  Bin Mu

IPC: H01L23/15 ,  C03C17/00 ,  C03C17/06 ,  H01L21/48 ,  H01L23/498

CPC classification number: H01L23/15 ,  C03C17/004 ,  C03C17/06 ,  H01L21/486 ,  H01L23/49822 ,  H01L23/49827 ,  C03C2217/253 ,  C03C2218/365

Abstract: An electronic device, including layers, formed from a material that can remain substantially constant in structure, such as glass. The layer can be preformed with through glass vias that support at least one electrically conductive interconnect. The through glass via can have an edge region that can be substantially coplanar with an exposed surface of the layer.

公开(公告)号：US20240194548A1

公开(公告)日：2024-06-13

申请号：US18065250

申请日：2022-12-13

Applicant: Intel Corporation

Inventor： Kristof Darmawikarta ,  Steve S. Cho ,  Hiroki Tanaka ,  Haobo Chen ,  Gang Duan ,  Brandon Christian Marin ,  Suddhasattwa Nad ,  Srinivas V. Pietambaram

IPC: H01L23/15 ,  C23C18/16 ,  C23C18/18 ,  C23C18/48 ,  H01L21/48 ,  H01L23/00 ,  H01L23/498 ,  H01L25/065

CPC classification number: H01L23/15 ,  C23C18/1639 ,  C23C18/165 ,  C23C18/1855 ,  C23C18/48 ,  H01L21/4857 ,  H01L21/486 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/49866 ,  H01L24/16 ,  H01L25/0655 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2924/1011 ,  H01L2924/1511 ,  H01L2924/15174 ,  H01L2924/15788

Abstract: Apparatus and methods for electroless surface finishing on glass. A planarization process is performed on buildup dielectric and/or solder resist to create a flatter, more planar, upper surface for a substrate having a glass layer. Planarity is characterized by having surface variations of less than about 5 microns, as measured by recesses and/or protrusions. The planar surface enables finishing the substrate surface with an electroless NiPdAu process.

公开(公告)号：US20240222345A1

公开(公告)日：2024-07-04

申请号：US18090707

申请日：2022-12-29

Applicant: Intel Corporation

Inventor： Bohan Shan ,  Haobo Chen ,  Bai Nie ,  Srinivas Pietambaram ,  Gang Duan ,  Kyle Arrington ,  Ziyin Lin ,  Hongxia Feng ,  Yiqun Bai ,  Xiaoying Guo ,  Dingying Xu ,  Kristof Darmawikarta

IPC: H01L25/18 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L23/15 ,  H01L23/31 ,  H01L23/538 ,  H01L25/00

CPC classification number: H01L25/18 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/56 ,  H01L23/15 ,  H01L23/3121 ,  H01L23/5383 ,  H01L24/05 ,  H01L24/08 ,  H01L24/80 ,  H01L25/50 ,  H01L2224/05647 ,  H01L2224/08225 ,  H01L2224/80447 ,  H01L2224/80895

Abstract: An apparatus is provided which comprises: a plurality of interconnect layers within a substrate, a layer of organic dielectric material over the plurality of interconnect layers, copper pads within the layer of organic dielectric material, a first integrated circuit device copper-to-copper bonded with the copper pads, inorganic dielectric material over the layer of organic dielectric material, the inorganic dielectric material embedding the first integrated circuit device, and the inorganic dielectric material extending across a width of the substrate, and a second integrated circuit device coupled with a substrate surface above the inorganic dielectric material. Other embodiments are also disclosed and claimed.