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    PIEZOELECTRIC ACOUSTIC RESONATOR BASED SENSOR
    13.
    发明申请
    PIEZOELECTRIC ACOUSTIC RESONATOR BASED SENSOR 有权
    基于压电声学谐振器的传感器

    公开(公告)号：US20160041047A1

    公开(公告)日：2016-02-11

    申请号：US14453326

    申请日：2014-08-06

    Applicant: INVENSENSE, INC.

    Inventor： Fang Liu ,  Julius Ming-Lin Tsai ,  Xiang Li ,  Mike Daneman

    IPC: G01L1/16

    CPC classification number: G01L1/165 ,  G06F3/0436 ,  H03K17/96 ,  H03K17/9643 ,  H03K2217/96003

    Abstract: A piezoelectric acoustic resonator based sensor is presented herein. A device can include an array of piezoelectric transducers and an array of cavities that has been attached to the array of piezoelectric transducers to form an array of resonators. A resonator of the array of resonators can be associated with a first frequency response corresponding to a first determination that the resonator has been touched, and a second frequency response corresponding to a second determination that the resonator has not been touched. The array of piezoelectric transducers can include a piezoelectric material; a first set of electrodes that has been formed a first side of the piezoelectric material; and a second set of electrodes that has been formed on second side of the piezoelectric material.

    Abstract translation: 本文介绍了一种基于压电声谐振器的传感器。 器件可以包括压电换能器的阵列和已经附接到压电换能器阵列以形成谐振器阵列的空腔阵列。 谐振器阵列的谐振器可以与对应于谐振器已被触摸的第一确定的第一频率响应和对应于谐振器未被触摸的第二确定的第二频率响应相关联。 压电换能器阵列可包括压电材料; 已经形成为压电材料的第一侧的第一组电极; 以及已经形成在压电材料的第二侧上的第二组电极。

    ALUMINUM NITRIDE (AlN) DEVICES WITH INFRARED ABSORPTION STRUCTURAL LAYER
    14.
    发明申请
    ALUMINUM NITRIDE (AlN) DEVICES WITH INFRARED ABSORPTION STRUCTURAL LAYER 有权
    带有红外吸收结构层的氮化铝（AlN）器件

    公开(公告)号：US20150298965A1

    公开(公告)日：2015-10-22

    申请号：US14480051

    申请日：2014-09-08

    Applicant: INVENSENSE, INC.

    Inventor： Julius Ming-Lin Tsai ,  Michael J. Daneman

    IPC: B81B7/00 ,  B81B3/00 ,  B81C1/00

    CPC classification number: B81B7/007 ,  B81B3/0029 ,  B81B2201/032 ,  B81B2207/012 ,  B81B2207/07 ,  B81C1/00182 ,  B81C1/00269 ,  B81C1/00301 ,  B81C2201/013 ,  B81C2201/019 ,  B81C2203/0109 ,  B81C2203/0792

    Abstract: A micro-electro-mechanical system device is disclosed. The micro-mechanical system device comprises a first silicon substrate comprising: a handle layer comprising a first surface and a second surface, the second surface comprises a cavity; an insulating layer deposited over the second surface of the handle layer; a device layer having a third surface bonded to the insulating layer and a fourth surface; a piezoelectric layer deposited over the fourth surface of the device layer; a metal conductivity layer disposed over the piezoelectric layer; a bond layer disposed over a portion of the metal conductivity layer; and a stand-off formed on the first silicon substrate; wherein the first silicon substrate is bonded to a second silicon substrate, comprising: a metal electrode configured to form an electrical connection between the metal conductivity layer formed on the first silicon substrate and the second silicon substrate.

    Abstract translation: 公开了一种微机电系统装置。 微机械系统装置包括第一硅衬底，其包括：手柄层，包括第一表面和第二表面，所述第二表面包括空腔; 沉积在手柄层的第二表面上的绝缘层; 具有结合到绝缘层的第三表面和第四表面的器件层; 沉积在器件层的第四表面上的压电层; 设置在所述压电层上的金属导电层; 设置在所述金属导电层的一部分上的接合层; 以及在所述第一硅衬底上形成的间隔件; 其中所述第一硅衬底接合到第二硅衬底，包括：金属电极，被配置为在所述第一硅衬底上形成的所述金属传导层与所述第二硅衬底之间形成电连接。

    Two-dimensional array of CMOS control elements
    16.
    发明授权
    Two-dimensional array of CMOS control elements 有权

    公开(公告)号：US11440052B2

    公开(公告)日：2022-09-13

    申请号：US16395045

    申请日：2019-04-25

    Applicant: InvenSense, Inc.

    Inventor： James Christian Salvia ,  Michael H. Perrott ,  Marian Voros ,  Eldwin Ng ,  Julius Ming-Lin Tsai ,  Nikhil Apte

    IPC: B06B1/00 ,  B06B1/06 ,  G06F3/0354 ,  G06V40/13 ,  G06V40/12 ,  H01L27/092

    Abstract: An electronic device includes a plurality of CMOS control elements arranged in a two-dimensional array and a plurality of MEMS devices. Each CMOS control element of the plurality of CMOS control elements includes at least one of a low voltage semiconductor device, a high voltage PMOS semiconductor device, and a high voltage NMOS semiconductor device. Each MEMS device of the plurality of MEMS devices is associated with a CMOS control element of the plurality of CMOS control elements. The plurality of CMOS control elements are arranged in the two-dimensional array such that low voltage semiconductor devices are only adjacent to other low voltage semiconductor devices, high voltage PMOS semiconductor devices are only adjacent to other high voltage PMOS semiconductor devices, and high voltage NMOS semiconductor devices are only adjacent to other high voltage NMOS semiconductor devices.

    Operating a two-dimensional array of ultrasonic transducers
    17.
    发明授权
    Operating a two-dimensional array of ultrasonic transducers 审中-公开

    公开(公告)号：US10670716B2

    公开(公告)日：2020-06-02

    申请号：US15266673

    申请日：2016-09-15

    Applicant: InvenSense, Inc.

    Inventor： Nikhil Apte ,  Julius Ming-Lin Tsai ,  Michael Julian Daneman ,  Renata Melamud Berger

    IPC: G01S15/06 ,  G10K11/34 ,  B06B1/06

    Abstract: In a method of operating a two-dimensional array of ultrasonic transducers, a plurality of array positions comprising pluralities of ultrasonic transducers of the two-dimensional array of ultrasonic transducers is defined, the plurality of array positions each comprising a portion of ultrasonic transducers of the two dimensional array of ultrasonic transducers. For each array position of the plurality of array positions, a plurality of ultrasonic transducers associated with the respective array position are activated. The activation includes transmitting ultrasonic signals from a first group of ultrasonic transducers of the plurality of ultrasonic transducers, wherein at least some ultrasonic transducers of the first group of ultrasonic transducers are phase delayed with respect to other ultrasonic transducers of the first group of ultrasonic transducers, the first group of ultrasonic transducers for forming a focused ultrasonic beam. The activation also includes receiving reflected ultrasonic signals at a second group of ultrasonic transducers of the plurality of ultrasonic transducers.

    Piezoelectric acoustic resonator based sensor
    20.
    发明授权
    Piezoelectric acoustic resonator based sensor 有权

    公开(公告)号：US09618405B2

    公开(公告)日：2017-04-11

    申请号：US14453326

    申请日：2014-08-06

    Applicant: INVENSENSE, INC.

    Inventor： Fang Liu ,  Julius Ming-Lin Tsai ,  Xiang Li ,  Mike Daneman

    IPC: G06F3/043 ,  H03K17/96 ,  G01L1/16

    CPC classification number: G01L1/165 ,  G06F3/0436 ,  H03K17/96 ,  H03K17/9643 ,  H03K2217/96003

    Abstract: A piezoelectric acoustic resonator based sensor is presented herein. A device can include an array of piezoelectric transducers and an array of cavities that has been attached to the array of piezoelectric transducers to form an array of resonators. A resonator of the array of resonators can be associated with a first frequency response corresponding to a first determination that the resonator has been touched, and a second frequency response corresponding to a second determination that the resonator has not been touched. The array of piezoelectric transducers can include a piezoelectric material; a first set of electrodes that has been formed a first side of the piezoelectric material; and a second set of electrodes that has been formed on second side of the piezoelectric material.

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