公开(公告)号：JP2001049172A

公开(公告)日：2001-02-20

申请号：JP22816799

申请日：1999-08-12

Applicant: JSR CORP

Inventor： NISHIKAWA MICHINORI ,  INOUE YASUTAKE ,  TSUNODA MAYUMI ,  EBISAWA MASAHIKO ,  TAMAKI KENTARO ,  YAMADA KINJI

IPC: H01L21/312 ,  C09D5/25 ,  C09D183/00

Abstract: PROBLEM TO BE SOLVED: To provide a composition for coating film formation that can form the coating film having excellent cracking resistance, mechanical strengths and dielectric properties as a material for interlayer insulation film. SOLUTION: The objective composition for forming coating film comprises (A) the hydrolyzate the condensed product from at least one selected from compounds of (A-1) the formula represented by the formula: R1Si(OR2)4-a (R1 is H, a fluorine atom or a monovalent organic group; R2 is a monovalent organic group; a is an integer of 0-2) and (A-2) the compound represented by the formula: R3b(R4O)3-bSi-(R7)d-Si(OR5)3-cR6c (R3, R4 and R5 may be identical or different, and individually monovalent organic groups; b and c may be identical or different from each other and are each 0-2; R7 is an oxygen atom or a group represented by -(CH2)n-; n is 1-6; d is 0 or 1) or either of one or the other and (B) a compound bearing two or more hydroxy groups in one molecule.

公开(公告)号：JP2000344893A

公开(公告)日：2000-12-12

申请号：JP15463099

申请日：1999-06-02

Applicant: JSR CORP

Inventor： NISHIKAWA MICHINORI ,  TSUNODA MAYUMI ,  HAKAMAZUKA SATOKO ,  EBISAWA MASAHIKO ,  YAMADA KINJI

IPC: H01L21/312 ,  C08G77/18 ,  C08G77/50 ,  C09D183/06 ,  C09D183/14

Abstract: PROBLEM TO BE SOLVED: To obtain a composition which is excellent in coating film uniformity, storage stability, dielectric properties, and CMP resistance by hydrolyzing a silane compound in the presence of a solvent having an oxypropylene-unit- containing molecular structure and an alcohol having a specified b.p. SOLUTION: At least one silane compound selected from compounds represented by the formulas: R1aSi(OR2)4-a and R3b(R4O)3-bSi-(R7)d-Si(OR5)3cR6c are hydrolyzed in the presence of a solvent represented by the formula: R8O (CHCH3CH2O)dR9 and an alcohol having a b.p. under normal pressure of 100 deg.C or lower. In these formulas, R2 to R6 are each a monovalent organic group; R1 is H, F, or R2; a, b, and c are each 0-2; R7 is 0 or (CH2)n; d is 0 or 1; n is 1-6; R8 and R9 are each H, 1-4C alkyl, or CH3CO; and d is 1-2. Preferably, the hydrolysis is conducted in the presence of a metal chelate compound represented by the formula: R10eM(OR11)f-e (wherein R10 is a chelating agent; M is a metal atom; R11 is 2-5C alkyl or 6-20C aryl; f is the atomic valency of M; and e is an integer of 1-f).

公开(公告)号：JP2002040668A

公开(公告)日：2002-02-06

申请号：JP2000226604

申请日：2000-07-27

Applicant: JSR CORP

Inventor： KONNO KEIJI ,  SUGITA HIKARI ,  HASHIGUCHI YUICHI ,  EBISAWA MASAHIKO ,  INOUE YASUTAKE ,  NISHIKAWA MICHINORI

IPC: G03F7/11 ,  H01L21/027 ,  H01L21/312

Abstract: PROBLEM TO BE SOLVED: To provide a composition for a lower layer film and a method for manufacturing the composition, having high adhesion property with a resist, durability against resist developer and oxygen ashing and superior storage stability such that a resist lower film to obtain a resist pattern with high reproducibility can be formed. SOLUTION: The composition for the resist lower layer film is obtained by hydrolysis and/or condensation of a silane compound expressed by general formula (1) and a silane compound expressed by general formula (2) in the presence of water and a catalyst, in at least one kind of organic solvent selected from propyleneglycol monoethylether and propyleneglycol monomethylether. The general formulae are (1): Si(OR1)4, wherein R1 is a univalent organic group, and (2): R2Si(OR3)3, wherein each of R2 and R3 is independently a univalent organic group.

公开(公告)号：JP2001152023A

公开(公告)日：2001-06-05

申请号：JP33426799

申请日：1999-11-25

Applicant: JSR CORP

Inventor： NISHIKAWA MICHINORI ,  HAKAMAZUKA SATOKO ,  EBISAWA MASAHIKO ,  TSUNODA MAYUMI ,  TAMAKI KENTARO ,  YAMADA KINJI

IPC: C08L85/00 ,  C08K5/07 ,  C08L33/06 ,  C08L71/02 ,  C08L83/12 ,  C09D133/00 ,  C09D171/02 ,  C09D183/06 ,  C09D183/12 ,  H01L21/312 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To obtain a composition for film formation useful as an interlaminar insulating film in a semiconductor element, etc., having a low dielectric constant of coating film and uniformity of coating film, excellent low foaming properties in shaking in a solution, etc. SOLUTION: This composition for film formation is characterized in that the composition comprises (A) a polymer obtained by hydrolyzing at least one kind of compound selected from (A-1) a compound of general formula (1): R1aSi(OR2)4-a (R1 is a hydrogen atom, a fluorine atom or a monofunctional organic group; R2 is a monofunctional organic group; (a) is an integer of 0 to 2) and (A-2) a compound of general formula (2): R3b(R4O)3-bSi-(R7)d-Si(OR5)3-cR6c (R3, R4, R5 and R6 may be the same or different and are each a monofunctional organic group; b and c may be the same or different and are each a number of 0 to 2; R7 is an oxygen atom or (CH2)n; d is 0 or 1; n is a number of 1 to 6) in the presence of a metal chelate compound of general formula (3): R8e(MCOR9)f-e (R8 is a chelating agent; M is a metal atom; R9 is a 2-5C alkyl group or a 6-20C aryl group; f is a valence of metal M; e is an integer of 1 to f) and (B) a silicone surfactant.

公开(公告)号：JP2001055554A

公开(公告)日：2001-02-27

申请号：JP23460399

申请日：1999-08-20

Applicant: JSR CORP

Inventor： NISHIKAWA MICHINORI ,  TSUNODA MAYUMI ,  EBISAWA MASAHIKO ,  HAKAMAZUKA SATOKO ,  YAMADA KINJI

IPC: H01L21/768 ,  C09D183/04 ,  C09J183/04 ,  H01L21/283 ,  H01L21/312 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To obtain a film-forming composition which excels in the mechanical properties of a coated film and can effect firing of the coated film in a short period of time and exhibits a very low dielectric constant as the interlaminar insulating film material in semiconductor elements and the like. SOLUTION: A film-forming composition contains (A) a hydrolyzate and/or a condensate of at least one compound selected from (A-1) compounds represented by formula I: R1aSi(OR2)4-a (wherein R1 is hydrogen, fluorine or a monovalent organic group; R2 is a monovalent organic group; and (a) is an integer of 0-2) and (A-2) compounds represented by formula II: R3b(R4 O)3-bSi-(R7)d-Si(OR5)3-cR6c (wherein R3, R4, R5 and R6 are the same or different and each is a monovalent organic group; (b) and (c) are the same or different and each is a number of 0-2; R7 is an oxygen atom or -(CH2)n-; (n) is 1-6; and (d) is 0 or 1), (B) a latent acid catalyst and/or a latent base catalyst, and (C) a solvent having a boiling point at normal pressures of not lower than 180 deg.C.

公开(公告)号：JP2001040283A

公开(公告)日：2001-02-13

申请号：JP21561599

申请日：1999-07-29

Applicant: JSR CORP

Inventor： NISHIKAWA MICHINORI ,  TSUNODA MAYUMI ,  EBISAWA MASAHIKO ,  HAKAMAZUKA SATOKO ,  YAMADA KINJI

IPC: H01L21/768 ,  C07F7/04 ,  C07F7/12 ,  C07F7/18 ,  C08G77/08 ,  C09D5/25 ,  C09D183/02 ,  C09D183/04 ,  C09D185/00 ,  H01L21/312 ,  H01L21/316 ,  H01L23/522

Abstract: PROBLEM TO BE SOLVED: To obtain the subject composition useful as an interlayer dielectric in a semiconductor element, etc., having a low dielectric constant and mechanical strength of coating film and long-term preservability of solution by hydrolyzing a specific compound and a specified metal chelate compound in the presence of an acid catalyst in a fixed solvent. SOLUTION: (A) One or more compounds selected from the group consisting of (i) a compound of formula I (R1 is H, F or a monofunctional organic group; R2 is a monofunctional organic group; (a) is 0-2) such as trimethoxysilane, etc., and (ii) a compound of formula II [R3 to R6 are each a monofunctional organic group; b and c are each 0-2; R7 is O, (CH2)n (n is 1-6); d is 0 or 1] such as hexamethoxydisiloxane, etc., and (B) a chelate compound of formula III (R8 is a chelating agent; M is metal atom; R9 is a 2-5C alkyl or a 6-20C aryl; f is a valence of M; e is an integer of 1-f) such as triethoxy.mono(acetylacetonato) titanium, etc., are hydrolyzed in the presence of an acid catalyst in a solvent of formula IV (R10 and R11 are each H or a 1-4C alkyl; R12 is an alkylene; g is 1 or 2) to give the objective composition for forming a film.