Abstract:
A vertical type liquid crystal aligning agent is provided to ensure excellent voltage maintenance characteristics in a vertical type liquid crystal device while exhibiting good coatability on a substrate. A vertical type liquid crystal aligning agent comprises a polymer having at least one of amic acid repeating units represented by the following formula 1a and imide repeating units represented by the following formula 2, wherein Q1 in formula 1a and Q2 in formula 1b contains at least one divalent organic group represented by the following formulae 2a and 2b, and at least one divalent organic group represented by the formula of -X2-3-X2. In formulae 1a and 1b, each of P1 and P2 represents a tetravalent organic group forming a tetracarboxylic acid, and each of Q1 and Q2 represents a divalent organic group forming a diamine. In formulae 2a and 2b, X1 is a single bond, -O-, -CO-, -COO-, -OCO-, -NHCO-, -CONH-, -S-, methylene, C2-C6 alkylene or phenylene; R1 is a C10-20 alkyl, C4-C40 alicyclic monovalent organic group or C6-C20 fluorine-containing monovalent organic group; and R2 is a C4-C40 alicyclic divalent organic group or C5-C30 fluorine-containing divalent organic group. In the formula of -X2-3-X2, X2 independently represents methylene or a C2-C20 alkylene; and R3 is an aromatic ring-containing backbone, organosiloxane backbone, divalent organic group represented by the formula of -R-(O-C2H4)n-O-R- (wherein R is a C2-C5 alkylene and n is 1-100), a divalent organic group represented by the formula of -R-(O-C2H4)n-O-R- (wherein R is a C2-C5 alkylene, and n is 1-50), C4-C40 alicyclic ring backbone-containing divalent organic group.
Abstract:
Provided are a vertical alignment liquid crystal aligning agent which has a volume intrinsic resistance of 1x10^13 Ф.cm or less after sintering at a high temperature, and a vertical alignment liquid crystal display device containing the liquid crystal aligning agent. The vertical alignment liquid crystal aligning agent comprises a poly(amide acid) polymer and/or a polyimide having a volume intrinsic resistance of a film of 1x10^12 Ф.cm after sintering at a high temperature. Preferably the vertical alignment liquid crystal aligning agent contains a divalent organic group of 8 mol% or more derived from a diamine represented by a formula I-1 or I-2 to the total divalent organic group, wherein X is a single bond, -O-, -CO-, -COO-, -OCO-, -NHCO-, -CONH-, -S-, a methylene group, a C2-C6 alkylene group, or a phenylene group; A1 is a divalent organic group having a C10-C20 alkyl group or a C4-C40 alicyclic structure, or a C6-C20 divalent organic group having a fluorine atom; and A2 is a monovalent organic group having a C4-C40 alicyclic structure.
Abstract:
A stacked film for semiconductor having superior adhesion to a coating film formed by a CVD process in, for example, semiconductor devices, an insulating film having the stacked film and a substrate for semiconductor using the insulating film are disclosed. The stacked film comprises (A) a film of an organic compound having a carbon content of 60 % by weight or more and (B) a film prepared by heating a hydrolytic condensate obtained by hydrolysis and condensation of at least one compound selected from the group consisting of specific compounds represented by the general formulae (51) to (54) described hereinabove.
Abstract:
A diyne-containing (co)polymer which is soluble in organic solvents, has excellent processability, and gives a cured coating film excellent in heat resistance, solvent resistance, low-dielectric characteristics, and mechanical strength; processes for producing the same; and a cured film. The diyne-containing (co)polymer contains at least 10 mol% repeating units represented by the following formula (1) and has a weight-average molecular weight of from 500 to 1,000,000: wherein Y represents a specific bivalent organic group; Ar represents a bivalent organic group; and n represents 0 or 1.
Abstract:
Disclosed are a composition for a resist underlayer film excellent in reproducibility of a resist pattern, excellent in adhesion to a resist, excellent in resistance to a developing solution used after exposure of the resist and decreased in film loss in oxygen ashing of the resist; and a method for producing the same, the composition comprising: both or either of a hydrolysate and a condensate of (A) at least one compound selected from the group consisting of (A-1) a compound represented by the following general formula (1): R aSi(OR )4-a wherein R represents a hydrogen atom, a fluorine atom or a univalent organic group, R represents a univalent organic group, and a represents an integer of 0 to 2, and (A-2) a compound represented by the following general formula (2): R b(R O)3-bSi-(R )d-Si(OR )3-cR c wherein R , R , R and R , which may be the same or different, each represent univalent organic groups, b and c, which may be the same or different, each represent integers of 0 to 2, R represents an oxygen atom or -(CH2)n-, d represents 0 or 1, and n represents an integer of 1 to 6; and (B) a compound generating an acid by ultraviolet irradiation and/or heating.
Abstract:
a composition for film formation which can be cured in a short time period and give a film having a low dielectric constant and excellent in heat resistance, adhesion and cracking resistance, a polymer for use in the composition and a process for producing the polymer. The composition prepared by dissolving the polymer having specific repeating units in a solvent has excellent film-forming properties. The polymer has repeating units represented by the following general formula (1): wherein Z and Y are as defined hereinabove.t
Abstract:
A composition for film formation capable of forming a coating film excellent in low dielectric constant characteristics, cracking resistance, modulus of elasticity, and adhesion to substrates and useful as an interlayer insulating film material in semiconductor devices, etc. The composition for film formation contains (A) at least one member selected from an aromatic polyarylene and an aromatic poly (arylene ether), (B) a polyvinylsiloxane, and (C) an organic solvent.
Abstract:
A chemical mechanical polishing stopper film comprising at least one organic polymer, said film having a dielectric constant of 4 or lower, and a chemical mechanical polishing method. The chemical mechanical polishing method comprises forming a chemical mechanical polishing stopper film comprising at least one organic polymer on an insulating film so that the stopper film is interposed between the insulating film and a metal film to be removed by chemical mechanical polishing, and then removing the metal film with a chemical mechanical polishing slurry.
Abstract:
A stacked film for semiconductor having superior adhesion to a coating film formed by a CVD process in, for example, semiconductor devices, an insulating film having the stacked film and a substrate for semiconductor using the insulating film are disclosed. The stacked film comprises (A) a film of an organic compound having a carbon content of 60 % by weight or more and (B) a film prepared by heating a hydrolytic condensate obtained by hydrolysis and condensation of at least one compound selected from the group consisting of specific compounds represented by the general formulae (51) to (54) described hereinabove.
Abstract:
A stacked film, a method for the production of the stacked film, an insulating film comprising the stacked film, and a substrate for semiconductor, using the insulating film. The stacked film comprises films of two or more kinds of alkoxysilane hydrolysis condensates having 5 nm or more difference in a mean radius of gyration, or films of alkoxysilane hydrolysis condensate having 0.3 or more difference in the dielectric constant. The stacked film is obtained by applying a coating solution comprising (B) a compound having a mean radius of gyration of less than 10 nm, and then applying a coating solution comprising (A) a compound having a mean radius of gyration of from 10 to 30 nm, followed by heating. The stacked film provides a dielectric film (substrate for semiconductor) having superior adhesion to a CVD film.