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    3.
    发明专利
    未知

    公开(公告)号：DE60021476T2

    公开(公告)日：2006-05-24

    申请号：DE60021476

    申请日：2000-05-31

    Applicant: JSR CORP

    Inventor： NISHIKAWA MICHINORI ,  YAMADA KINJI ,  KAKUTA MAYUMI ,  INOUE YASUTAKE ,  EBISAWA MASAHIKO ,  HAKAMATSUKA SATOKO ,  TAMAKI KENTAROU

    IPC: C09D183/06 ,  H01B3/46 ,  H01L21/312

    Abstract: A composition for film formation which is useful as an interlayer insulating film material in the production of semiconductor devices and the like, and gives a coating film having excellent uniformity, low dielectric constant, low leakage current and excellent storage stability; and a material for insulating film formation using the composition. The composition comprises (A) a product of hydrolysis and condensation obtained by hydrolyzing and condensing at least one compound selected from the group consisting of (A-1) compounds represented by the formula (1): R aSi(OR )4-a, and (A-2) compounds represented by the formula (2): R b(R O)3-bSi-(R )d-Si(OR )3-cR c; and (B) a compound represented by the formula (3): R O(CHCH3CH2O)eR .

    PRODUCTION OF COMPOSITION FOR FILM FORMATION, COMPOSITION FOR FILM FORMATION, AND MATERIAL FOR INSULATION FILM FORMATION
    5.
    发明专利
    PRODUCTION OF COMPOSITION FOR FILM FORMATION, COMPOSITION FOR FILM FORMATION, AND MATERIAL FOR INSULATION FILM FORMATION 失效

    公开(公告)号：JP2000344894A

    公开(公告)日：2000-12-12

    申请号：JP15463199

    申请日：1999-06-02

    Applicant: JSR CORP

    Inventor： NISHIKAWA MICHINORI ,  TSUNODA MAYUMI ,  EBISAWA MASAHIKO ,  HAKAMAZUKA SATOKO ,  YAMADA KINJI

    IPC: H01L21/312 ,  C08G77/18 ,  C08G77/50 ,  C09D183/06 ,  C09D183/14 ,  C09D185/00

    Abstract: PROBLEM TO BE SOLVED: To obtain a composition which is excellent in coating film uniformity, storage stability, dielectric properties, and low moisture ansorptopn by hydrolyzing a silane compound in the presence of an alcohol having a specified b.p. and then adding a solvent having an oxypropylene-unit-containing molecular structure to the resultant product. SOLUTION: At least one silane compound selected from compounds represented by the formulas: R1aSi(OR2)4-a and R3b(R4O)3-bbSi(R7)d-Si(OR5)3-cR6c are hydrolyzed in the presence of an alcohol having a b.p. under normap pressure of 100 deg.C or lower, and then a solvent represented by the formula: R8O (CHCH3CH2O)dR9 is added to the resultant product. In these formulas, R2 to R6 are each a monovalent organic group; R1 is H, F, or R2; a, b, and c are each 0-2; R7 is O or (CH2)n; d is 0 or 1; n is 1-6; R8 and R9 are each H, 1-4C alkyl, or CH3CO; and d is 1-2. Preferably, the hydrolysis is conducted in the presence of a metal chelate compound represented by the formula: R10eM (OR11)f-e (wherein R10 is a chelating agent; M is a metal atom; R11 is 2-5C alkyl or 6-20C aryl; f is the atomic valency of M; and e is an integer of 1-f).

    COMPOSITION FOR FILM FORMATION AND MATERIAL FOR FORMING INSULATION FILM
    6.
    发明专利
    COMPOSITION FOR FILM FORMATION AND MATERIAL FOR FORMING INSULATION FILM 失效

    公开(公告)号：JP2001164113A

    公开(公告)日：2001-06-19

    申请号：JP35286299

    申请日：1999-12-13

    Applicant: JSR CORP

    Inventor： NISHIKAWA MICHINORI ,  TSUNODA MAYUMI ,  TAMAKI KENTARO ,  EBISAWA MASAHIKO ,  INOUE YASUTAKE ,  HAKAMAZUKA SATOKO ,  YAMADA KINJI

    IPC: H01L21/312 ,  C08K5/06 ,  C08K5/07 ,  C08L83/02 ,  C08L83/04 ,  C09D183/00

    Abstract: PROBLEM TO BE SOLVED: To obtain a composition for film formation which can form a coating film having a suitable and uniform thickness, is excellent in long-time stability of solution, and can provide a coating film having low moisture absorption and permittivity. SOLUTION: This composition contains at least either a hydrolyzate or a condensate prepared by reacting (A) silane compounds comprising (A-1) a compound represented by formula (1): Si(OR2)4 (R2 is a monovalent organic group) and (A-2) a compound represented by formula (2): R1aSi(OR2)4-a (R1 is H, F, or a monovalent organic group; R2 is a monovalent organic group; and n is 1 or 2) in the presence of (B) a metal chelate compound represented by formula (3): R10eM(OR11)f-e (R10 is a chelating agent; M is a metal atom; R11 is a 2-5C alkyl or a 6-20C aryl; f is the valency of the metal atom M; and e is an integer of 1-f) and water; (C) a propylene glycol monoalkyl ether; and a β-diketone.

    FILM FORMING COMPOSITION AND MATERIAL FOR FORMATION OF INTERLAYER DIELECTRIC
    7.
    发明专利
    FILM FORMING COMPOSITION AND MATERIAL FOR FORMATION OF INTERLAYER DIELECTRIC 失效

    公开(公告)号：JP2001049120A

    公开(公告)日：2001-02-20

    申请号：JP22478099

    申请日：1999-08-09

    Applicant: JSR CORP

    Inventor： NISHIKAWA MICHINORI ,  TSUNODA MAYUMI ,  EBISAWA MASAHIKO ,  HAKAMAZUKA SATOKO ,  YAMADA KINJI

    IPC: B05D5/12 ,  C08L83/04 ,  H01L21/312 ,  H01L21/768 ,  H01L23/522

    Abstract: PROBLEM TO BE SOLVED: To obtain the subject composition excellent in homogeneity of coating film, low in consumption of solvent, low in dielectric constant useful as interlayer dielectric material by including a hydrolyzate and a condensate of a specific compound and a specific solvent. SOLUTION: This composition includes (A) a hydrolyzate and/or a condensate of one or more compounds selected from a compound of the formula: R1aSi(OR2)4-a (R1 is H, F or a univalent organic group; R2 is a univalent organic group; a is 0-2) and a compound of the formula: R3b(R4O)3-bSi-(R7)d-Si(OR5)3-cR6c [R3 to R6 are each a univalent organic group; b and c are each 0-2; R7 is O or -(CH2)n-; n is 1-6; d is 0 or 1], (B) (i) a solvent of the formula: R8O(CHCH3 CH2O)eR9 (R8 and R9 are each H or a univalent organic group selected from a 1-4C alkyl; e is 1-2), and (ii) one or more kind of solvents selected from hydrocarbons, esters, ketones, and amides. The preferable weight ratio in the component B of the i:ii is 95:5-40:60.

    FILM-FORMING COMPOSITION AND INSULATING FILM-FORMING MATERIAL
    10.
    发明专利
    FILM-FORMING COMPOSITION AND INSULATING FILM-FORMING MATERIAL 失效

    公开(公告)号：JP2001187866A

    公开(公告)日：2001-07-10

    申请号：JP37450499

    申请日：1999-12-28

    Applicant: JSR CORP

    Inventor： NISHIKAWA MICHINORI ,  TAMAKI KENTARO ,  TSUNODA MAYUMI ,  INOUE YASUTAKE ,  EBISAWA MASAHIKO ,  HAKAMAZUKA SATOKO ,  YAMADA KINJI

    IPC: C09D183/04 ,  C09D4/00 ,  C09D183/14 ,  H01L21/312

    Abstract: PROBLEM TO BE SOLVED: To obtain film-forming compositions and insulating film-forming materials which excel in storages stability of a solution and exhibit a low dielectric constant even by a short-time firing as the interlaminar insulating film materials of semiconductor elements and the like. SOLUTION: The film-forming compositions comprise (A) a hydrolyzate and/or a condensate of at least one compound of (A-1) a compound of formula (1): R1aSi(OR2)4-a (wherein R1 is hydrogen, fluorine or a monovalent organic group; R2 is a monovalent organic group; and a is an integer of 0-2) and (A-2) a compound of formula (2): R3b(R4O)3-bSi-(R7)d-Si(OR5)3-cR6c (wherein R3 to R6 may be the same or different and each is a monovalent organic group; b and c may be the same or different and each is a number of 0-2; R7 is oxygen or -(CH2)n-; n is 1-6; and d is 0 or 1), (B) a compound of formula (3): R10eM (wherein R10 is a chelating agent; M is a metal atom; and e is a valence of M), and (C) an organic solvent.

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