公开(公告)号：JP2005241963A

公开(公告)日：2005-09-08

申请号：JP2004051548

申请日：2004-02-26

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： KONNO KEIJI ,  NOMURA NAKAATSU ,  SUGITA HIKARI ,  TANAKA MASATO ,  SHIMOKAWA TSUTOMU

IPC: G03F7/11 ,  G03F7/004 ,  H01L21/027

CPC classification number: B82Y30/00 ,  B82Y20/00

Abstract: PROBLEM TO BE SOLVED: To provide a composition for forming an antireflection film from which a resist pattern having excellent dry etching durability, a high antireflection effect and excellent resolution and accuracy without causing intermixing can be formed, and to provide an antireflection film formed by using the above composition. SOLUTION: The composition for forming an antireflection film contains a polymer obtained from at least one kind of compound expressed by formula (3) or formula (4) and at least one kind of fullerene compound selected from a group (B) consisting of fullerenes and fullerene derivatives. In formulae, R 1 independently represents a hydrogen atom, a fluorine atom or a monovalent group; R 4 represents a halogen atom or a monovalent group; and each of R 5 , R 6 and R 7 independently represents a hydrogen atom, a halogen atom or a monovalent group. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 解决问题：提供一种抗反射膜的组合物，可以形成具有优异的耐蚀刻耐久性，高抗反射效果和优异的分辨率和精度的抗蚀剂图案，而不会产生混合，并且可以形成抗反射膜 通过使用上述组合物形成。 解决方案：用于形成抗反射膜的组合物含有由式（3）或式（4）表示的至少一种化合物和至少一种选自（B）的富勒烯化合物中的至少一种 的富勒烯和富勒烯衍生物。 在式中，R“1”独立地表示氢原子，氟原子或一价基团; R 4 表示卤素原子或一价基团; R SP 5，R SP 6，R SP 7，R SP 7各自独立地表示氢原子，卤素原子或一价基团。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2002207296A

公开(公告)日：2002-07-26

申请号：JP2001341741

申请日：2001-11-07

Applicant: JSR CORP

Inventor： KONNO KEIJI ,  KAWAGUCHI KAZUO ,  TANAKA MASATO ,  KOBAYASHI YASUTAKA ,  HAYASHI AKIHIRO ,  SUGITA HIKARI ,  HASHIGUCHI YUICHI

IPC: G03F7/11 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a composition for a resist lower layer film having preferable gas permeability, excellent adhesiveness with a resist film and excellent durability against a developer for the development of the resist film and to provide a method for manufacturing the composition, the resist lower layer film and a method for manufacturing the film. SOLUTION: The composition for a resist lower layer film contains a film forming component consisting of a specified silane compound and a hydrolyzed product and/or condensed product of anther specified silane compound containing heat decomposable organic groups. When the composition is heated, the film forming component is hardened while the heat decomposable organic groups produce gas to form a porous silica film. The decomposition temperature of the heat decomposable organic groups is preferably 200 to 400 deg.C. The density of the resist lower film to be formed is preferably 0.7 to 1.8 g/cm3. The resist lower film is formed by heating the thin film of the above composition at a temperature equal to or higher than the decomposition temperature of the heat decomposable organic groups.

公开(公告)号：JP2001011387A

公开(公告)日：2001-01-16

申请号：JP18263599

申请日：1999-06-29

Applicant: JSR CORP

Inventor： YAMADA KINJI ,  SUGITA HIKARI ,  HAYASHI EIJI ,  SAITO AKIO ,  OTA YOSHIHISA

IPC: B05D5/00 ,  C09D5/20 ,  C09D185/00

Abstract: PROBLEM TO BE SOLVED: To provide a strippable film-forming and curing composition which temporally covers a board and can easily be removed e.g. by an alkali solution after that. SOLUTION: This strippable film-forming composition comprises (A) a hydrolysis condensate of a compound expressed by the formula Al(OR1)xQ3-x [wherein R1 is a monovalent organic group; Q is a β-dicarbonyl compound; and (x) is 1 to 3] and/or a compound expressed by the formula W(OR1)yQz-y [wherein (z) is 5 or 6; and (y) is 1 to 5 when (z) is 5 and (y) is 1 to 6 when (z) is 6], and (B) an organic solvent.

公开(公告)号：JP2000356854A

公开(公告)日：2000-12-26

申请号：JP16321599

申请日：1999-06-10

Applicant: JSR CORP

Inventor： SUGITA HIKARI ,  SAITO AKIO ,  YAMADA KINJI ,  NISHIKAWA MICHINORI ,  OTA YOSHIHISA ,  ISAMOTO YOSHITSUGU

IPC: H01L21/027 ,  C08K5/54 ,  C08L83/04 ,  C08L83/14 ,  G03F7/075 ,  G03F7/09 ,  G03F7/11 ,  C08K5/541

Abstract: PROBLEM TO BE SOLVED: To obtain a composition for a film under a resist disposed between the resist and an antireflection film, having both adhesion to the resist and resistance to a resist developing solution and also having resistance to oxygen ashing in the removal of the resist. SOLUTION: The composition contains (A) a hydrolyzate and/or a condensation product of at least one compound selected from the group comprising compounds of the formula R1aSi(OR2)4-a [where R1 is H, F or a monovalent organic group, R2 is a monovalent organic group and (a) is an integer of 0-2] and the formula R3b(R4O)3-bSi-(R7)d-Si(OR5)3-cR6c [where R3-R6 may be the same or different and are each a monovalent organic group, (b) and (c) may be the same or different and are each a number of 0-2, R7 is O or -(CH2)n-, (d) is 0 or 1 and (n) is a number of 1-6] and (B) a compound which generates an acid when irradiated with UV and/or heated.

公开(公告)号：JP2014160202A

公开(公告)日：2014-09-04

申请号：JP2013031368

申请日：2013-02-20

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： KUDO KAZUO ,  SHIMADA NOBUKO ,  SUGITA HIKARI

IPC: G03F7/004 ,  G02B5/20 ,  G02B5/22 ,  G02F1/1335 ,  G03F7/40

Abstract: PROBLEM TO BE SOLVED: To provide a curable composition which can form a colored pixel having excellent surface smoothness and chemical resistance.SOLUTION: A curable composition comprises following components (A), (B) and (C): (A) a colorant, (B) an acid or an acid generator, and (C) a compound having a group directly connected to an aromatic ring, the group represented by the formula (1) -CH-O-R, where Rrepresents an alkyl group having 2 or more carbon atoms or a group represented by -COR, and Rrepresents an alkyl group having 2 or more carbon atoms.

Abstract translation: 要解决的问题：提供可形成具有优异的表面平滑性和耐化学性的着色像素的可固化组合物。溶解性：可固化组合物包含以下组分（A），（B）和（C）：（A）着色剂， （B）酸或酸发生剂，和（C）具有与芳环直接相连的基团的化合物，由式（1）表示的基团-CH-OR，其中R表示具有2个或更多个碳原子的烷基 原子或由-COR表示的基团，R表示具有2个以上碳原子的烷基。

公开(公告)号：JP2012252343A

公开(公告)日：2012-12-20

申请号：JP2012159880

申请日：2012-07-18

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： KONNO YOSUKE ,  NOMURA NAKAATSU ,  TOYOKAWA IKUHIRO ,  SUGITA HIKARI

IPC: G03F7/11 ,  C07C69/96 ,  C07C245/04 ,  C07C409/04 ,  G03F7/38 ,  H01L21/027

CPC classification number: G03F7/091 ,  G03F7/168

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a resist underlay film having a function as an antireflection film as well as excellent pattern transfer performance and etching resistance, and causing no bend in a pattern during transferring a fine pattern, and to provide a composition for a resist underlay film used for the above method, and a pattern forming method.SOLUTION: The method for forming a resist underlay film comprises: an application step of applying a composition for a resist underlay film (for example, a composition containing a compound having a phenolic hydroxy group, a solvent and an accelerator) on a substrate to be processed; and a film formation step of forming a film of the obtained coating in an oxidative atmosphere having an oxygen concentration of 1 vol% or more and at a temperature of 300°C or higher.

Abstract translation: 要解决的问题：提供一种形成具有防反射膜功能的抗蚀剂底层膜的方法以及优异的图案转印性能和耐蚀刻性，并且在转印精细图案期间不会使图案弯曲，并且 以提供用于上述方法的抗蚀底膜的组合物和图案形成方法。 ＆lt; P＆gt;解决方案：形成抗蚀剂底层膜的方法包括：将抗蚀剂底膜（例如，含有酚羟基，化合物和溶剂和促进剂的组合物的组合物）的组合物施加到 待处理基材; 以及在氧浓度为1体积％以上，温度为300℃以上的氧化性气氛中形成所得涂膜的膜的成膜工序。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2006117621A

公开(公告)日：2006-05-11

申请号：JP2004310099

申请日：2004-10-25

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： NISHIMURA ISAO ,  SHIMOKAWA TSUTOMU ,  YAMAHARA NOBORU ,  SUGITA HIKARI ,  TANAKA MASATO ,  EGAWA HIROMI ,  SUGIE NORIHIKO

IPC: C07F7/18 ,  C08G77/04 ,  G03F7/039 ,  G03F7/075 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a radiation sensitive resin composition useful as a chemical amplifying type resist having especially high sensitivity, excellent in pattern formation and depth of focus (DOF), a polysiloxane useful as a resin component as the radiation sensitive resin composition and a silane compound useful as the synthetic raw material, etc., of the polysiloxane. SOLUTION: This silane compound is expressed by formula (I) [wherein, R is an alkoxy or the like; R 1 is H, F, a lower alkyl or the like; A is a divalent (substituted) hydrocarbon group; R 2 is a monovalent dissociative acid group]. The polysiloxane has a structural unit expressed by formula (1), or has the above structural unit and a structural unit expressed by formula (2). The radiation sensitive resin composition contains (A) the polysiloxane having the structural unit expressed by formula (1) and the structural unit expressed by formula (2), and (B) a radiation sensitive acid-forming agent. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：为了提供用作具有特别高的灵敏度，图案形成和焦深（DOF）优异的化学放大型抗蚀剂的辐射敏感性树脂组合物，可用作树脂组分的聚硅氧烷作为辐射敏感性 树脂组合物和可用作聚硅氧烷的合成原料等的硅烷化合物。 解决方案：该硅烷化合物由式（I）表示[其中，R是烷氧基等; R 1是H，F，低级烷基等; A是二价（取代）烃基; R 2 是一价离解酸基]。 聚硅氧烷具有由式（1）表示的结构单元，或具有上述结构单元和由式（2）表示的结构单元。 辐射敏感性树脂组合物含有（A）具有由式（1）表示的结构单元的聚硅氧烷和由式（2）表示的结构单元，和（B）辐射敏感性的酸形成剂。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2006003484A

公开(公告)日：2006-01-05

申请号：JP2004177818

申请日：2004-06-16

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： MISHIMA KENJI ,  SUGITA HIKARI ,  NEMOTO HIROAKI

IPC: G03F7/11 ,  G03F7/40 ,  G03F7/42 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a pattern forming method including resist material removing, that can avoide damages to low dielectric materials or wafer substrates and also contaminations and aggravations of work environments.
SOLUTION: On a substrate 10, a low dielectric material film 11 such as an SiO
2 film is formed and a water or alkali soluble polymer layer 12 is formed thereon. And a nonaqueous or non-alkaline soluble polymer layer 13 is formed on this water or alkali soluble polymer layer 12. Then, after coating a resist film 14 and forming, exposing, and developing it, it is etched as deep as reaching the layer (low dielectric material film 11) under the water or alkali soluble polymer layer 12, and the pattern is transferred.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供包括抗蚀剂材料去除的图案形成方法，其可以对低电介质材料或晶片衬底造成损害，以及工作环境的污染和恶化。 解决方案：在基板10上形成诸如SiO 2 SB薄膜的低电介质材料膜11，并在其上形成水或碱溶性聚合物层12。 并且在该水或碱溶性聚合物层12上形成非水或非碱溶性聚合物层13.然后，在涂覆抗蚀剂膜14并形成，曝光和显影之后，将其蚀刻到达到层的深度 低介电材料膜11）在水或碱溶性聚合物层12下方，并且图案被转印。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2004191386A

公开(公告)日：2004-07-08

申请号：JP2002325402

申请日：2002-11-08

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： SUGITA HIKARI ,  KONNO KEIJI ,  KOBAYASHI YASUTAKA ,  TANAKA MASATO ,  SHIMOKAWA TSUTOMU

IPC: G03F7/11 ,  C08L83/02 ,  C08L83/04 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a composition for a resist underlayer film excellent in storage stability for obtaining a resist underlayer film which ensures no resist peeling, improves pattern reproducibility, and has alkali resistance and resistance to oxygen ashing in resist removal when disposed under a resist. SOLUTION: The composition for a resist underlayer film comprises (A) a hydrolysis-condensation product of an alkoxysilane mixture including a compound represented by the formula (1): Si(OR 2 ) 4 and a compound represented by the formula (2): R 1 n Si(OR 2 ) 4-n and (B) a hydrolysis-condensation product of at least a compound represented by the above formula (2). In the formula (1), symbols R 2 may be the same or different and each represents a monovalent organic group. In the formula (2), symbols R 1 may be the same or different and each represents a monovalent organic group or H; symbols R 2 may be the same or different and each represents a monovalent organic group; and n is an integer of 1-2. COPYRIGHT: (C)2004,JPO&NCIPI

公开(公告)号：JP2001022083A

公开(公告)日：2001-01-26

申请号：JP19730299

申请日：1999-07-12

Applicant: JSR CORP

Inventor： NISHIKAWA MICHINORI ,  SUGITA HIKARI ,  KAWABE KENICHI ,  YAMADA KINJI ,  SAITO AKIO ,  OTA YOSHIHISA

IPC: H01L21/027 ,  G03F7/004 ,  G03F7/075 ,  G03F7/11

Abstract: PROBLEM TO BE SOLVED: To obtain a composition for an underlayer film of a resist excellent in adhesion to the resist and resistance to a developing solution and less liable to reduce film thickness in the oxygen ashing of the resist. SOLUTION: The composition contains (A) a hydrolyzate and/or a condensation product of a compound of the formula R1aSi(OR2)4-a [where R1 is H, F or a monovalent organic group, R2 is a monovalent organic group and (a) is 0-2] or the formula R3b(R4O)3-bSi-(R7)d-Si(OR5)3-cR6c [where R3-R6 are each a monovalent organic group, (b) and (c) are each 0-2, R7 is 0 or -(CH2)n-, (d) is 0 or 1 and (n) is 1-6], (B) a solvent of the formula R8O(CHCH3CH2O)cR9 [where R8 and R9 are each H, 1-4C alkyl or CH3CO- and (e) is 1-2] and (C) a compound which generates an acid when irradiated with light and/or heated.