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公开(公告)号：JP2004242725A
公开(公告)日：2004-09-02
申请号：JP2003033152
申请日：2003-02-12
Inventor： YASUDA YOSHITOMO , YOKOYAMA YASUAKI , BESSHO NOBUO
Abstract: PROBLEM TO BE SOLVED: To provide a production method to produce easily and with high accuracy a polyimide thin film which is used for a medical instrument and the medical instrument equipped with the above polyimide thin film. SOLUTION: This invention is the medical instrument which includes a coating layer made of a photo-curing polyimide resin composition having (a) a polyimide resin, (b) a carbon cluster and/or its derivative and (c) a compound which includes a heterocycle excluding the above (a), or (a-1) a polyimide resin which includes a heterocycle and (b) the carbon cluster and/or its derivative as essential ingredients, and a production method of the medical instrument wherein a base material is coated with the photo-curing polyimide resin composition and irradiated with light to form the coating layer with a thickness of 1-1,000 μm. COPYRIGHT: (C)2004,JPO&NCIPI
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12.发明专利
公开(公告)号：JP2004079663A
公开(公告)日：2004-03-11
申请号：JP2002235607
申请日：2002-08-13
Inventor： YOKOYAMA YASUAKI , BESSHO NOBUO
IPC: B24B37/20 , B24B37/24 , H01L21/304 , B24B37/00
Abstract: PROBLEM TO BE SOLVED: To provide fixing agent of a pad for CMP wherein a pad for CMP can be fixed on a polishing plate, easily, strictly and surely, and isolation (exfoliation) of the pad is easy when the pad is exchanged, to provide a fixing method and an isolation method of the pad for CMP wherein the fixing agent is used, and to provide a working method of a wafer which uses the pad which is fixed on the polishing plate by using the above method.
SOLUTION: The fixing agent of the pad for CMP contains liquid crystal compound. The fixing method of the pad for CMP contains fixing wherein (1) the pad fixing agent is positioned between a surface of the pad and a surface of the polishing plate, and (2) the pad is fixed to the polishing plate by heating and fusing the fixing agent. The isolation method of the pad for CMP is characterized by performing isolation at a temperature exceeding a melting point of the fixing agent. The working method of a wafer is characterized by that a wafer is subjected to working treatment at a temperature lower than the melting point of the fixing agent, on the pad which is fixed to the polishing plate by using the fixing method.
COPYRIGHT: (C)2004,JPO-
公开(公告)号：JP2003313190A
公开(公告)日：2003-11-06
申请号：JP2002118382
申请日：2002-04-19
Inventor： YOKOYAMA YASUAKI , MATSUKI YASUO
IPC: C01B33/107 , C07F7/08
Abstract: PROBLEM TO BE SOLVED: To provide a method for producing silanes, preventing boranes and/or diboranes which are formed out of sodium boron hydride from being discharged to the outside of a reaction system thereof to keep safety and economy, by using a mixture of the sodium boron hydride and a metallic hydride as a reducing agent.
SOLUTION: This method for producing the silanes comprises reducing a silicon halide by using the mixture of the sodium boron hydride and the metallic hydride.
COPYRIGHT: (C)2004,JPOAbstract translation: 要解决的问题：为了提供一种制备硅烷的方法，防止由硼氢化钠形成的硼烷和/或乙硼烷被排出到其反应体系的外部以保持安全性和经济性，通过使用 硼氢化钠与金属氢化物的混合物作为还原剂。 解决方案：这种制备硅烷的方法包括通过使用硼氢化钠和金属氢化物的混合物来还原卤化硅。 版权所有（C）2004，JPO
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公开(公告)号：JP2003277386A
公开(公告)日：2003-10-02
申请号：JP2002075358
申请日：2002-03-19
Inventor： YOKOYAMA YASUAKI , MATSUKI YASUO
IPC: C07F7/08
Abstract: PROBLEM TO BE SOLVED: To provide a safe and economical method for the easy deactivation of a silane compound having high chemical activity.
SOLUTION: A silane compound having an SiH bond is deactivated by reacting the compound with a mixture of an allyl halide and/or benzyl halide, an amine and a metal compound.
COPYRIGHT: (C)2004,JPOAbstract translation: 要解决的问题：为了提供一种安全和经济的方法来容易地使具有高化学活性的硅烷化合物失活。 解决方案：通过使化合物与烯丙基卤化物和/或苄基卤，胺和金属化合物的混合物反应，使具有SiH键的硅烷化合物失活。 版权所有（C）2004，JPO
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公开(公告)号：JP2002201162A
公开(公告)日：2002-07-16
申请号：JP2000375771
申请日：2000-12-11
Applicant: JSR CORP
Inventor： SHIHO KOUJI , KATO HITOSHI , MATSUKI YASUO , EHATA SATOSHI , MARUYAMA YOICHIRO , YOKOYAMA YASUAKI
IPC: C01G55/00 , C07C13/267 , C07C49/92 , C07C69/36 , C07C69/716 , C07C69/72 , C07F15/00 , H01B1/22 , H01B5/14 , H01B13/00 , H01L21/28 , H01L21/8242 , H01L21/8246 , H01L27/105 , H01L27/108
Abstract: PROBLEM TO BE SOLVED: To provide a composition which can form a metal ruthenium film and a ruthenium oxide film by a simple coating and baking method, to provide a method for forming a metal ruthenium film and a ruthenium oxide film with the composition, to provide a metal ruthenium film and a ruthenium oxide film formed by the method, and to provide an electrode comprising the film. SOLUTION: This solution composition contains a specific ruthenium complex. The metal ruthenium film or the ruthenium oxide film is formed by thermally treating the coating film of the solution composition in an atmosphere free from oxygen or in an atmosphere containing oxygen. The electrode comprises the film.
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Patent Agency Ranking
公开(公告)号：JP2001290265A
公开(公告)日：2001-10-19
申请号：JP2000104038
申请日：2000-04-05
Applicant: JSR CORP
Inventor： KIMURA TORU , YOKOYAMA YASUAKI , SATO HOZUMI , IGARASHI KATSUTOSHI
IPC: G03F7/027 , G03F7/033 , G03F7/40 , H01L21/027 , H01L21/302 , H01L21/3065
Abstract: PROBLEM TO BE SOLVED: To provide a radiation sensitive resin composition which gives a thick mask pattern having such cold crack resistance that it can withstand dry etching for piercing a hole in a silicon wafer substrate or the like and to provide photolithography using the composition. SOLUTION: The radiation sensitive resin composition contains (B) 7-38 pts.wt. compound of the formula CH2=CR1COOCH2CH(OH)CH2-R3-CH2-CH(OH) CH2-OCOCR2=CH2, (C) 2-25 pts.wt. compound having 3-6 (meth)acryloyloxy groups in one molecule and (D) 10-50 pts.wt. radiation polymerization initiator, based on (A) 100 pts.wt. alkali-soluble copolymer. In the photolithography, dry etching is carried out after cooling to
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17.发明专利
公开(公告)号：JP2003347253A
公开(公告)日：2003-12-05
申请号：JP2002157059
申请日：2002-05-30
Inventor： BESSHO NOBUO , HANAMURA MASAAKI , YOKOYAMA YASUAKI
IPC: B24B37/30 , H01L21/301 , H01L21/304 , B24B37/04
Abstract: PROBLEM TO BE SOLVED: To provide wafer fixing pellets and a semiconductor wafer processing method using the same wherein a semiconductor wafer is brought into close contact with a base such as a hard plate, an elastic carrier (packing material), or a wafer and fixed so as to be held when the wafer is processed, the wafer as a work is easily separated, a fixing agent layer attached to the wafer is easily removed, the wafer is easily cleaned, and the wafer as the work is kept free from contamination. SOLUTION: The wafer fixing pellets contain liquid crystal compounds. The pellets interposed between the semiconductor wafer and the base where the wafer is fixed are heated to be melted, and the wafer and the base are brought into close contact with each other and fixed with each other. After the exposed surface of the wafer is subjected to processing, the wafer is separated from the base and cleaned. COPYRIGHT: (C)2004,JPO
Abstract translation: 要解决的问题：为了提供使用其的晶片固定片和半导体晶片处理方法，其中半导体晶片与诸如硬板，弹性载体（包装材料）等的基底紧密接触，或 晶片固定，以便在晶片被处理时被保持，作为工件的晶片容易分离，容易除去附着在晶片上的固定剂层，晶片容易清洁，并且作为工件的晶片保持释放 从污染。 解决方案：晶片固定颗粒含有液晶化合物。 插入在半导体晶片和晶片固定的基板之间的芯片被加热熔化，使晶片和基座彼此紧密接触并彼此固定。 在对晶片的暴露表面进行处理之后，将晶片与基底分离并清洁。 版权所有（C）2004，JPO
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18.发明专利
公开(公告)号：JP2002339076A
公开(公告)日：2002-11-27
申请号：JP2001146723
申请日：2001-05-16
Applicant: JSR CORP
Inventor： YOKOYAMA YASUAKI , MATSUKI YASUO
IPC: C23C18/08 , C23C18/14 , H01L21/28 , H01L21/288 , H01L21/3205 , H01L23/52
Abstract: PROBLEM TO BE SOLVED: To provide a method by which wiring and electrodes usable for many electronic devices can easily and inexpensively be formed and a composition obtained by the method. SOLUTION: A solution of the composition for forming a metallic copper thin film containing at least one kind selected from a compound expressed by the following formula (1) of [R COO]2 Cu (1) (wherein, R denotes a 4 to 12C alkyl group) and a compound expressed by the following formula (2) of [R -COCH=C(O)-R ]2 Cu (2) (wherein, R and R are the same or different, and are a 1 to 12C alkyl group) and a solvent are applied, and a heat and/or light treatment is performed.
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公开(公告)号：JP2002203794A
公开(公告)日：2002-07-19
申请号：JP2000402809
申请日：2000-12-28
Applicant: SEIKO EPSON CORP , JSR CORP
Inventor： FURUSAWA MASAHIRO , MIYASHITA SATORU , YUDASAKA KAZUO , SHIMODA TATSUYA , YOKOYAMA YASUAKI , MATSUKI YASUO , TAKEUCHI YASUMASA
IPC: C23C16/24 , B32B9/04 , C23C16/04 , C23C16/448 , H01L21/205
Abstract: PROBLEM TO BE SOLVED: To provide a silicon thin film formation method by the CVD method for eliminating the need for a patterning process after a thin film is formed. SOLUTION: Patterns 30a and 30b made of a monomolecular film are formed on a liquid arrangement surface 81 of a first substrate 8 and on a thin film formation surface 71 of a second substrate 7 using (tridecafluoro-1,1,2,2- tetrahydro)octyl-triethoxirane. A liquid drop 5 made of cyclosilane is arranged at an opening 31 of the monomolecular film patterns 30a of the first substrate 8. Both the substrates 7 and 8 are arranged in parallel with a specific interval, and the positions of the openings 31 are mated. While a nitrogen gas is allowed to flow between both the substrates 7 and 8, the second substrate 7 is heated to 450 deg.C for retaining for 10 minutes. As a result, the liquid drop 5 is vaporized and is supplied into the opening 31 of the second substrate 7, thus forming a silicon thin film 50.
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公开(公告)号：JP2002097574A
公开(公告)日：2002-04-02
申请号：JP2000291392
申请日：2000-09-26
Applicant: JSR CORP
Inventor： MATSUKI YASUO , YOKOYAMA YASUAKI , TAKEUCHI YASUMASA
Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a boron film on a base substance effectively, for example, at a high yield or at a high forming rate with a simple operation and an apparatus. SOLUTION: The method for forming the boron film on the base substance comprises decomposing a borane complex by heat, in the presence of an inert organic vapour, under an atmospheric pressure.
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