COPOLYMER AND UPPER FILM-FORMING COMPOSITION
    2.
    发明公开
    COPOLYMER AND UPPER FILM-FORMING COMPOSITION 有权
    共聚物和上膜的组合物

    公开(公告)号:EP1806370A4

    公开(公告)日:2008-07-23

    申请号:EP05787854

    申请日:2005-09-28

    Applicant: JSR CORP

    Abstract: Disclosed is an upper film-forming composition which enables to form a coating film on a photoresist without causing intermixing with the photoresist film and to maintain a stable coating film without dissolving into a medium used during immersion exposure. The upper film-forming composition is also capable to form an upper layer which enables to obtain a pattern shape that is not inferior to the one obtained by a process other than immersion exposure, namely a dry exposure and can be easily dissolved in an alkaline developer. Also disclosed is a copolymer containing a repeating unit having a group represented by the general formula (1) below, a repeating unit having a group represented by the general formula (2) below, at least one repeating unit (I) selected from repeating units having a carboxyl group, and a repeating unit (II) having a sulfo group, and having a weight average molecular weight of 2,000-100,000 determined by gel permeation chromatography. (1) (2) At least one of R

    Copolymer and upper film-forming composition
    4.
    发明专利
    Copolymer and upper film-forming composition 有权
    共聚物和上胶膜组合物

    公开(公告)号:JP2012144734A

    公开(公告)日:2012-08-02

    申请号:JP2012055325

    申请日:2012-03-13

    Abstract: PROBLEM TO BE SOLVED: To provide a copolymer capable of forming a coating film on a photoresist without causing intermixing with the photoresist film, maintaining a stable coating film without dissolving in a medium used in immersion exposure, being free from pattern form deterioration even in the case of performing dry exposure which is not the immersion exposure, and forming an upper film which is easily soluble in an alkaline developer.SOLUTION: The copolymer includes at least one repeating unit (I) selected from a repeating unit (HO-C(R)(R)-) having 1-4C fluorinated alkyl and hydroxy-substituted alkyl, a repeating unit (R-SO-NH-) having a sulfonamide group with 1-4C fluorinated alkyl and a repeating unit having a carboxyl group, and a repeating unit (II) having a sulfo group, and has a weight-average molecular weight of 2,000-100,000 determined by gel permeation chromatography.

    Abstract translation: 要解决的问题:为了提供能够在光致抗蚀剂上形成涂膜的共聚物,而不会与光致抗蚀剂膜混合,保持稳定的涂膜而不溶解在浸没曝光中使用的介质中,没有图案形式变质 即使进行不是浸渍曝光的干式曝光,也可以形成容易溶于碱性显影剂的上层膜。 共聚物包括至少一个选自重复单元(HO-C(R 1 ))(R

    PHOTORESIST REMOVING SOLUTION COMPOSITION, REMOVING METHOD AND CIRCUIT BOARD

    公开(公告)号:JP2001215736A

    公开(公告)日:2001-08-10

    申请号:JP2000028381

    申请日:2000-02-04

    Applicant: JSR CORP

    Abstract: PROBLEM TO BE SOLVED: To provide an excellent photoresist removing solution composition which brings no residue on removal and does not cause corrosion to a metallic thin film part, and to provide a removing method using the composition and a circuit board produced by the method. SOLUTION: The photoresist removing solution composition contains 60-95 wt.% water-soluble organic solvent, 0.05-10 wt.% at least one alkaline compound selected from the group comprising a tetraalkylammonium hydroxide and an organic amine, 0. 05-15 wt.% at least one compound selected from glycols each having a molecular weight of

    Radiation-sensitive resin composition and resist film formed therewith
    7.
    发明专利
    Radiation-sensitive resin composition and resist film formed therewith 有权
    辐射敏感性树脂组合物和抗蚀剂薄膜

    公开(公告)号:JP2012093741A

    公开(公告)日:2012-05-17

    申请号:JP2011214135

    申请日:2011-09-29

    CPC classification number: G03F7/2041 G03F7/0046 G03F7/0397

    Abstract: PROBLEM TO BE SOLVED: To form a resist film suppressing generation of defects due to development failure in liquid immersion exposure while the hydrophobicity of a film surface is increased and also being excellent in lithographic performance.SOLUTION: There is provided a radiation-sensitive resin composition characterized by comprising a polymer (A) having a repeating unit (a1) having a group represented by the following general formula (1) or (2) and having a fluorine atom, in an amount of 0.1 mass% or more and 20 mass% or less based on the total volume of a polymer.

    Abstract translation: 要解决的问题:为了形成抗蚀剂膜,其抑制由于液面曝光时的显影失败而产生的缺陷,同时膜表面的疏水性增加并且还具有优异的光刻性能。 解决方案:提供一种辐射敏感性树脂组合物,其特征在于包含具有由以下通式(1)或(2)表示的基团的重复单元(a1)的聚合物(A),并具有氟原子 ,相对于聚合物的总体积为0.1质量%以上20质量%以下。 版权所有(C)2012,JPO&INPIT

    Upper layer film forming composition for liquid immersion and method of forming photoresist pattern
    8.
    发明专利
    Upper layer film forming composition for liquid immersion and method of forming photoresist pattern 有权
    用于液体浸渍的上层膜形成组合物和形成光电子图案的方法

    公开(公告)号:JP2010211226A

    公开(公告)日:2010-09-24

    申请号:JP2010101351

    申请日:2010-04-26

    Abstract: PROBLEM TO BE SOLVED: To realize satisfactory transmittance for exposure light of 248 nm (KrF) and 193 nm (ArF) wavelength, to realize the formation of a film on a photoresist, without intermixing with a photoresist film, to maintain a stable film without dissolution in water during liquid immersion photoexposure, and to form an upper layer film which is readily soluble in an alkali developer.
    SOLUTION: A composition to be coated on the photoresist film, when a liquid immersion photoexposure unit is used in which irradiation exposure is carried out, with water interposed between a lens and the photoresist film, comprises a resin which forms a stable film, without dissolution in water during irradiation exposure and is soluble in a subsequent developer using an alkaline aqueous solution; and a solvent containing a monohydric alcohol of a C6 or fewer. In particular, the resin contains a resin component having an alcoholic hydroxyl group on its side chain and containing a fluoroalkyl group on at least its α position.
    COPYRIGHT: (C)2010,JPO&INPIT

    Abstract translation: 要解决的问题:为了实现248nm(KrF)和193nm(ArF)波长的曝光光的令人满意的透射率,为了实现在光致抗蚀剂上形成膜而不与光致抗蚀剂膜混合,以保持 在液浸光曝光期间不溶于水的稳定膜,并形成易溶于碱显影剂的上层膜。 解决方案:当使用在透镜和光致抗蚀剂膜之间的水进行照射曝光的液浸光曝光单元时,要涂覆在光致抗蚀剂膜上的组合物包括形成稳定膜的树脂 ,在照射暴露时不溶于水,并且可溶于使用碱性水溶液的后续显影剂中; 和含有C6以下的一元醇的溶剂。 特别地,树脂在其侧链含有具有醇羟基的树脂成分,至少在其α位含有氟代烷基。 版权所有(C)2010,JPO&INPIT

    RADIATION-SENSITIVE RESIN COMPOSITION
    9.
    发明专利

    公开(公告)号:JP2003241372A

    公开(公告)日:2003-08-27

    申请号:JP2002040301

    申请日:2002-02-18

    Applicant: JSR CORP

    Abstract: PROBLEM TO BE SOLVED: To provide a radiation-sensitive resin composition capable of forming a radiation-sensitive resin composition film thicker than plating and having high resolution. SOLUTION: The radiation-sensitive resin composition comprises (A) an unsaturated group-containing alkali-soluble resin obtained by reacting 100 pts.wt. copolymer consisting of 1-40 wt.% constitutional units derived from a radical- polymerizable compound (a) having a carboxyl group, 1-50 wt.% constitutional units having a phenolic hydroxyl group derived from a radical-polymerizable compound (b-1) having a phenolic hydroxyl group or a radical-polymerizable compound (b-2) having a functional group convertible to a phenolic hydroxyl group after synthesis of the copolymer and the balance constitutional units derived from another radical-polymerizable compound (c) with 0.1-20 pts.wt. radical-polymerizable compound (d) having an epoxy group, (B) a compound having at least one ethylenically unsaturated double bond and (C) a radiation radical polymerization initiator. COPYRIGHT: (C)2003,JPO

    Composition for forming resist underlayer film and pattern forming method
    10.
    发明专利
    Composition for forming resist underlayer film and pattern forming method 有权
    用于形成电阻膜和图案形成方法的组合物

    公开(公告)号:JP2013228702A

    公开(公告)日:2013-11-07

    申请号:JP2013058928

    申请日:2013-03-21

    CPC classification number: G03F7/094 G03F7/004 G03F7/075 G03F7/0752

    Abstract: PROBLEM TO BE SOLVED: To provide a composition for forming a resist underlayer film, having excellent storage stability and high coating defect improving property capable of suppressing generation of coating defects, and to provide a pattern forming method using the composition.SOLUTION: The composition for forming a resist underlayer film comprises [A] a polysiloxane and [B] a solvent. The [B] solvent includes (B1) an organic solvent, which is a compound expressed by formula (1) or a carbonate compound and has a standard boiling point of 150.0°C or higher. The standard boiling point of the (B1) organic solvent is preferably 180°C or higher. The content percentage of the (B1) organic solvent in the [B] solvent is preferably 1 mass% or more and 50 mass% or less. The static surface tension of the (B1) organic solvent is preferably 20 mN/m or more and 50 mN/m or less.

    Abstract translation: 要解决的问题:提供一种形成抗蚀剂下层膜的组合物,具有优异的储存稳定性和高涂层缺陷改善性能,能够抑制涂层缺陷的产生,并提供使用该组合物的图案形成方法。 形成抗蚀剂下层膜包括[A]聚硅氧烷和[B]溶剂。 [B]溶剂包括(B1)由式(1)表示的化合物或碳酸酯化合物的有机溶剂,其标准沸点为150.0℃以上。 (B1)有机溶剂的标准沸点优选为180℃以上。 (B1)有机溶剂在[B]溶剂中的含有率优选为1质量%以上至50质量%以下。 (B1)有机溶剂的静态表面张力优选为20mN / m以上至50mN / m以下。

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