Abstract:
Disclosed is an upper film-forming composition which enables to form a coating film on a photoresist without causing intermixing with the photoresist film and to maintain a stable coating film without dissolving into a medium used during immersion exposure. The upper film-forming composition is also capable to form an upper layer which enables to obtain a pattern shape that is not inferior to the one obtained by a process other than immersion exposure, namely a dry exposure and can be easily dissolved in an alkaline developer. Also disclosed is a copolymer containing a repeating unit having a group represented by the general formula (1) below, a repeating unit having a group represented by the general formula (2) below, at least one repeating unit (I) selected from repeating units having a carboxyl group, and a repeating unit (II) having a sulfo group, and having a weight average molecular weight of 2,000-100,000 determined by gel permeation chromatography. (1) (2) At least one of R
Abstract:
An immersion upper layer film composition is provided which exhibits sufficient transparency for the exposure wavelength 248 nm(KrF) and 193 nm(ArF), can form a protective film on the photoresist film without being intermixed with the photoresist film, is not eluted into water used during immersion exposure to maintain a stable film, and can be easily dissolved in an alkaline developer. The composition applied to coat on the photoresist film when using an immersion exposure device which is irradiated through water provided between a lens and the photoresist film, the composition comprises a resin forming a water-stable film during irradiation and being dissolved in a subsequent developer, and a solvent containing a monovalent alcohol having 6 or less carbon atoms, and the resin contains a resin component having an alcoholic hydroxyl group on the side chain containing a fluoroalkyl group on at least the carbon atom of ±-position.
Abstract:
PROBLEM TO BE SOLVED: To provide a copolymer capable of forming a coating film on a photoresist without causing intermixing with the photoresist film, maintaining a stable coating film without dissolving in a medium used in immersion exposure, being free from pattern form deterioration even in the case of performing dry exposure which is not the immersion exposure, and forming an upper film which is easily soluble in an alkaline developer.SOLUTION: The copolymer includes at least one repeating unit (I) selected from a repeating unit (HO-C(R)(R)-) having 1-4C fluorinated alkyl and hydroxy-substituted alkyl, a repeating unit (R-SO-NH-) having a sulfonamide group with 1-4C fluorinated alkyl and a repeating unit having a carboxyl group, and a repeating unit (II) having a sulfo group, and has a weight-average molecular weight of 2,000-100,000 determined by gel permeation chromatography.
Abstract:
PROBLEM TO BE SOLVED: To provide an excellent photoresist removing solution composition which brings no residue on removal and does not cause corrosion to a metallic thin film part, and to provide a removing method using the composition and a circuit board produced by the method. SOLUTION: The photoresist removing solution composition contains 60-95 wt.% water-soluble organic solvent, 0.05-10 wt.% at least one alkaline compound selected from the group comprising a tetraalkylammonium hydroxide and an organic amine, 0. 05-15 wt.% at least one compound selected from glycols each having a molecular weight of
Abstract:
PROBLEM TO BE SOLVED: To obtain a radiation sensitive resin compsn. suitable for use as a material for forming a bump and for forming wiring. SOLUTION: The radiation sensitive resin compsn. contains (A) an alkali- soluble copolymer consisting of (a) constituent units derived from a radical polymerizable compd. having a carboxyl group, (b) constituent units derived from a radical polymerizable compd. having a phenolic hydroxyl group and (c) constituent units derived from other radical polymerizable compd., (B) a compd. having at least one ethylenically unsatd. double bond and (C) a radiation radical polymn. initiator.
Abstract:
PROBLEM TO BE SOLVED: To form a resist film suppressing generation of defects due to development failure in liquid immersion exposure while the hydrophobicity of a film surface is increased and also being excellent in lithographic performance.SOLUTION: There is provided a radiation-sensitive resin composition characterized by comprising a polymer (A) having a repeating unit (a1) having a group represented by the following general formula (1) or (2) and having a fluorine atom, in an amount of 0.1 mass% or more and 20 mass% or less based on the total volume of a polymer.
Abstract:
PROBLEM TO BE SOLVED: To realize satisfactory transmittance for exposure light of 248 nm (KrF) and 193 nm (ArF) wavelength, to realize the formation of a film on a photoresist, without intermixing with a photoresist film, to maintain a stable film without dissolution in water during liquid immersion photoexposure, and to form an upper layer film which is readily soluble in an alkali developer. SOLUTION: A composition to be coated on the photoresist film, when a liquid immersion photoexposure unit is used in which irradiation exposure is carried out, with water interposed between a lens and the photoresist film, comprises a resin which forms a stable film, without dissolution in water during irradiation exposure and is soluble in a subsequent developer using an alkaline aqueous solution; and a solvent containing a monohydric alcohol of a C6 or fewer. In particular, the resin contains a resin component having an alcoholic hydroxyl group on its side chain and containing a fluoroalkyl group on at least its α position. COPYRIGHT: (C)2010,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a radiation-sensitive resin composition capable of forming a radiation-sensitive resin composition film thicker than plating and having high resolution. SOLUTION: The radiation-sensitive resin composition comprises (A) an unsaturated group-containing alkali-soluble resin obtained by reacting 100 pts.wt. copolymer consisting of 1-40 wt.% constitutional units derived from a radical- polymerizable compound (a) having a carboxyl group, 1-50 wt.% constitutional units having a phenolic hydroxyl group derived from a radical-polymerizable compound (b-1) having a phenolic hydroxyl group or a radical-polymerizable compound (b-2) having a functional group convertible to a phenolic hydroxyl group after synthesis of the copolymer and the balance constitutional units derived from another radical-polymerizable compound (c) with 0.1-20 pts.wt. radical-polymerizable compound (d) having an epoxy group, (B) a compound having at least one ethylenically unsaturated double bond and (C) a radiation radical polymerization initiator. COPYRIGHT: (C)2003,JPO
Abstract:
PROBLEM TO BE SOLVED: To provide a composition for forming a resist underlayer film, having excellent storage stability and high coating defect improving property capable of suppressing generation of coating defects, and to provide a pattern forming method using the composition.SOLUTION: The composition for forming a resist underlayer film comprises [A] a polysiloxane and [B] a solvent. The [B] solvent includes (B1) an organic solvent, which is a compound expressed by formula (1) or a carbonate compound and has a standard boiling point of 150.0°C or higher. The standard boiling point of the (B1) organic solvent is preferably 180°C or higher. The content percentage of the (B1) organic solvent in the [B] solvent is preferably 1 mass% or more and 50 mass% or less. The static surface tension of the (B1) organic solvent is preferably 20 mN/m or more and 50 mN/m or less.