中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

25 records (took 0.024 seconds)

    HIGH CURRENT CONTROL CIRCUIT INCLUDING METAL-INSULATOR TRANSITION DEVICE, AND SYSTEM INCLUDING THE HIGH CURRENT CONTROL CIRCUIT
    12.
    发明申请
    HIGH CURRENT CONTROL CIRCUIT INCLUDING METAL-INSULATOR TRANSITION DEVICE, AND SYSTEM INCLUDING THE HIGH CURRENT CONTROL CIRCUIT 审中-公开
    包括金属绝缘子过渡装置的高电流控制电路和包括高电流控制电路的系统

    公开(公告)号：WO2009107993A3

    公开(公告)日：2010-02-04

    申请号：PCT/KR2009000932

    申请日：2009-02-27

    Applicant: KOREA ELECTRONICS TELECOMM ,  KIM HYUN-TAK ,  KIM BONG-JUN ,  YUN SUN-JIN

    Inventor： KIM HYUN-TAK ,  KIM BONG-JUN ,  YUN SUN-JIN

    IPC: H01L25/16 ,  H01L27/06 ,  H01L49/00

    CPC classification number: H01L21/8222 ,  H01L23/62 ,  H01L27/067 ,  H01L27/082 ,  H01L2924/0002 ,  H03K17/14 ,  H03K17/567 ,  H01L2924/00

    Abstract: Provided are a high current control circuit including a metal-insulator transition (MIT) device (100) and a system including the high current control circuit so that a high current can be controlled and switched by the small-size high current control citcuit, and a heat generation problem can be solved. The high current control circuit includes the MIT device connected in a current driving device (500) and undergoing an abrupt MIT at a predetermined transition voltage; and a switching control transistor (400) connected between the current driving device and the MIT device and controlling on-off switching of the MIT device. By including the metal-insulator transition (MlT) device, the high current control circuit switches a high current that is input to or output from the current driving device. Also, the MIT device constitutes a MIT-TR composite device (1000) with a heat-preventing transistor (200) which prevents heat generation and is connected on the MIT device.

    Abstract translation: 提供了包括金属 - 绝缘体转变（MIT）器件（100）的高电流控制电路和包括高电流控制电路的系统，使得可以通过小型高电流控制电路控制和切换高电流，以及 可以解决发热问题。 高电流控制电路包括连接在电流驱动装置（500）中并在预定转换电压下经历突变MIT的MIT装置; 以及连接在电流驱动装置和MIT装置之间并控制MIT装置的开关切换的开关控制晶体管（400）。 通过包括金属 - 绝缘体转变（MlT）器件，高电流控制电路切换输入到当前驱动装置或从当前驱动装置输出的高电流。 此外，MIT装置构成具有防止热产生并连接在MIT装置上的防热晶体管（200）的MIT-TR复合装置（1000）。

    CIRCUIT FOR PREVENTING SELF-HEATING OF METAL-INSULATOR-TRANSITION (MIT) DEVICE AND METHOD OF FABRICATING INTEGRATED-DEVICE FOR THE SAME CIRCUIT
    13.
    发明申请
    CIRCUIT FOR PREVENTING SELF-HEATING OF METAL-INSULATOR-TRANSITION (MIT) DEVICE AND METHOD OF FABRICATING INTEGRATED-DEVICE FOR THE SAME CIRCUIT 审中-公开
    用于防止金属绝缘体转变（MIT）装置的自加热的电路和用于制造相同电路的集成装置的方法

    公开(公告)号：WO2009107948A3

    公开(公告)日：2010-02-04

    申请号：PCT/KR2009000834

    申请日：2009-02-23

    Applicant: KOREA ELECTRONICS TELECOMM ,  KIM HYUN-TAK ,  KIM BONG-JUN ,  YUN SUN-JIN ,  KIM DAE-YONG

    Inventor： KIM HYUN-TAK ,  KIM BONG-JUN ,  YUN SUN-JIN ,  KIM DAE-YONG

    IPC: H01L25/16 ,  H01L27/06 ,  H01L49/00

    CPC classification number: H01L27/067 ,  H01L49/003

    Abstract: Provided are a MIT device self-heating preventive-circuit that can solve a self-heating problem of a MIT device (100) and a method of manufacturing a MIT device self-heating preventive-circuit integrated device. The MIT device self-heating preventive-circuit includes a MIT device (100) that generates an abrupt MIT at a temperature equa to or greater than a critical temperature and is connected to a current driving device (500) to control the flow of current driving device, a transistor (200) that is connected to the MIT device (100) to control the self-heating of the MIT device after generating the MIT in the MIT device and a resistor (300) connected to the MIT device and the transistor.

    Abstract translation: 提供了能够解决MIT装置（100）的自身加热问题的MIT装置自发热防止电路以及制造MIT装置自发热防止电路集成装置的方法。 MIT装置自发热防止电路包括MIT装置（100），其在等于或大于临界温度的温度下产生突然的MIT，并连接到电流驱动装置（500）以控制电流驱动 在MIT设备中产生MIT之后连接到MIT设备（100）以控制MIT设备的自身加热的晶体管（200）和连接到MIT设备和晶体管的电阻器（300）。

    MIT-Transistorsystem, das eine Vorrichtung mit einem kritischen Strom enthält
    14.
    发明专利
    MIT-Transistorsystem, das eine Vorrichtung mit einem kritischen Strom enthält 未知

    公开(公告)号：DE102014109241A1

    公开(公告)日：2015-01-08

    申请号：DE102014109241

    申请日：2014-07-02

    Applicant: KOREA ELECTRONICS TELECOMM

    Inventor： KIM HYUN-TAK

    IPC: H03K17/51

    Abstract: Es wird ein Metall/Isolator-Übergang-Transistorsystem (MIT-Transistorsystem) geschaffen, das eine MIT-Vorrichtung zur Versorgung mit einem kritischen Strom enthält, die ermöglicht, dass zwischen einem Steueranschluss und einem Auslassanschluss eines MIT-Transistors ein MIT auftritt, um den MIT-Transistor leicht und zweckmäßig anzusteuern. Ein Stromversorger in Übereinstimmung mit der vorliegenden Erfindung stellt einen kritischen Strom bereit, um zu ermöglichen, dass zwischen dem Steueranschluss und dem Ausgangsanschluss des MIT-Transistors eine MIT-Erscheinung auftritt.

    15.
    发明专利
    未知

    公开(公告)号：AT550791T

    公开(公告)日：2012-04-15

    申请号：AT08789139

    申请日：2008-05-07

    Applicant: KOREA ELECTRONICS TELECOMM

    Inventor： KIM HYUN-TAK ,  LEE YONG-WOOK ,  KIM BONG-JUN ,  CHOI SUNG-YOUL ,  YUN SUN-JIN

    IPC: H01L49/00

    Abstract: Provided are a 3-terminal MIT switch which can easily control a discontinuous MIT jump and does not need a conventional gate insulating layer, a switching system including the 3-terminal MIT switch, and a method of controlling an MIT of the 3-terminal MIT switch. The 3-terminal MIT switch includes a 2-terminal MIT device, which generates discontinuous MIT in a transition voltage, an inlet electrode and an outlet electrode, which are respectively connected to each terminal of the 2-terminal MIT device, and a control electrode, which is connected to the inlet electrode and includes an external terminal separated from an external terminal of the inlet electrode, wherein an MIT of the 2-terminal MIT device is controlled according to a voltage or a current applied to the control electrode. The switching system includes the 3-terminal MIT switch, a voltage source connected to the inlet electrode, and a control source connected to the control electrode.

Patent Agency Ranking