公开(公告)号：DE4443800A1

公开(公告)日：1996-05-30

申请号：DE4443800

申请日：1994-12-08

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： SUH JEONG-DAE ,  SUNG GUN-YONG

IPC: H01L39/00 ,  H01L29/78 ,  H01L39/22 ,  H01L39/24 ,  H01L39/14 ,  H01L39/12 ,  C04B35/505

Abstract: Superconducting field effect device comprises: (a) an oxide crystal substrate (10); (b) 1st high temp. superconducting thin films (20), electrically sepd. from each other, where each film acts as a source/drain; (c) a patterning layer (30) formed on one of the films (20) and one part of the exposed surface of the substrate; (d) a 2nd high temp. superconducting thin film (40) having a 1st part (40 a) orientated vertically in the C axis, in which the patterning layer does not exist, a 2nd part (40 b) orientated horizontally in the C-axis, in which the patterning layer does exist, and a grain boundary (40c) formed between the two parts; (e) a gate insulating layer (60) formed on the 2nd thin film; (f) a gate electrode (70 c) formed on the gate insulating layer and; (g) source and drain electrodes (70 a, 70 b) formed on the exposed surfaces of the 2nd high temp. superconducting thin film over both 1st thin films. Prodn. of the device is also claimed.

公开(公告)号：EP1958266A4

公开(公告)日：2012-10-17

申请号：EP06757518

申请日：2006-04-25

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIM TAE-YOUB ,  PARK NAE-MAN ,  SUNG GUN-YONG ,  YANG JONG-HEON

IPC: H01L33/10 ,  H01L33/34 ,  H01L33/06 ,  H01L33/08 ,  H01L33/16 ,  H01L33/18 ,  H01L33/20 ,  H01L33/42 ,  H01L33/60

CPC classification number: H01L33/20 ,  H01L33/06 ,  H01L33/10 ,  H01L33/18 ,  H01L33/34 ,  H01L33/60

公开(公告)号：EP1992019A4

公开(公告)日：2011-04-13

申请号：EP06769057

申请日：2006-06-27

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： HUH CHUL ,  PARK RAE-MAN ,  SHIN JAE-HEON ,  KIM KYUNG-HYUN ,  KIM TAE-YOUB ,  CHO KWAN-SIK ,  SUNG GUN-YONG

IPC: H01L33/00 ,  H01L33/18 ,  H01L33/34

CPC classification number: H01L33/34 ,  B82Y20/00 ,  H01L33/18 ,  Y10S438/962 ,  Y10S977/773 ,  Y10S977/774